Semiconductor substrate
US-2024105512-A1 · Mar 28, 2024 · US
US9530643B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9530643-B2 |
| Application number | US-201514645894-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 12, 2015 |
| Priority date | Mar 12, 2015 |
| Publication date | Dec 27, 2016 |
| Grant date | Dec 27, 2016 |
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A method for forming an epitaxial structure includes providing a two-dimensional material on a crystal semiconductor material and opening up portions of the two-dimensional material to expose the crystal semiconductor material. A structure is epitaxially grown in the portions opened up in the crystal semiconductor material such that the epitaxial growth is selective to the exposed crystal semiconductor material relative to the two-dimensional material.
Opening claim text (preview).
What is claimed is: 1. A method for forming an epitaxial structure, comprising: providing a two-dimensional material on a crystal semiconductor material; opening up portions of the two-dimensional material to expose the crystal semiconductor material; and epitaxially growing a structure in the portions opened up in the crystal semiconductor material such that the epitaxial growth is selective to the exposed crystal semiconductor material relative to the two-dimensional materia…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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