Selective epitaxy using epitaxy-prevention layers

US9530643B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9530643-B2
Application numberUS-201514645894-A
CountryUS
Kind codeB2
Filing dateMar 12, 2015
Priority dateMar 12, 2015
Publication dateDec 27, 2016
Grant dateDec 27, 2016

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A method for forming an epitaxial structure includes providing a two-dimensional material on a crystal semiconductor material and opening up portions of the two-dimensional material to expose the crystal semiconductor material. A structure is epitaxially grown in the portions opened up in the crystal semiconductor material such that the epitaxial growth is selective to the exposed crystal semiconductor material relative to the two-dimensional material.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for forming an epitaxial structure, comprising: providing a two-dimensional material on a crystal semiconductor material; opening up portions of the two-dimensional material to expose the crystal semiconductor material; and epitaxially growing a structure in the portions opened up in the crystal semiconductor material such that the epitaxial growth is selective to the exposed crystal semiconductor material relative to the two-dimensional materia…

Assignees

Inventors

Classifications

Patent family

Related publications grouped by family.

External sources

Next steps

Free tools are coming soon. Tell us what you want to track and we'll notify you.

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US9530643B2 cover?
A method for forming an epitaxial structure includes providing a two-dimensional material on a crystal semiconductor material and opening up portions of the two-dimensional material to expose the crystal semiconductor material. A structure is epitaxially grown in the portions opened up in the crystal semiconductor material such that the epitaxial growth is selective to the exposed crystal semic…
Who is the assignee on this patent?
IBM
What technology area does this patent fall under?
Primary CPC classification H10P14/2904. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 27 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).