Non-volatile memory and methods of fabricating the same
US-2024268126-A1 · Aug 8, 2024 · US
Oxide semiconductor film
US9530640B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9530640-B2 |
| Application number | US-201514749340-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 24, 2015 |
| Priority date | May 4, 2015 |
| Publication date | Dec 27, 2016 |
| Grant date | Dec 27, 2016 |
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Abstract
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An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In 2 Ce x ZnO 4+2x , wherein x=0.5˜2.
First claim
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What is claimed is: 1. An oxide semiconductor film comprises indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1; wherein the oxide semiconductor film has a carrier density of about 10 12 cm −3 to about 10 20 cm −3 , and a carrier mobility of about 5.0 cm 2 V −1 s −1 to about 45.0 cm 2 V −1 s −1 . 2. The oxide semiconductor film of claim 1 being an n-type semiconductor…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9530640B2 cover?
- An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In 2 Ce x ZnO 4+2x , wherein x=0.5˜2.
- Who is the assignee on this patent?
- Univ Tsinghua, Hon Hai Prec Ind Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01L21/02565. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Dec 27 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).