Hard mask composition and method for forming pattern using same

Patent metadata

Field	Value
Publication number	US-9529257-B2
Application number	US-201314420957-A
Country	US
Kind code	B2
Filing date	Sep 2, 2013
Priority date	Oct 24, 2012
Publication date	Dec 27, 2016
Grant date	Dec 27, 2016

Abstract

Disclosed are a polymer represented by the Chemical Formula 1, a monomer represented by the Chemical Formula 2, and a solvent, wherein the monomer is included in the same or a higher amount than the polymer, and a method of forming patterns using the same.

First claim

The invention claimed is:

1. A hardmask composition, comprising:
a polymer including a repeating unit represented by the following Chemical Formula 1,
a monomer represented by the following Chemical Formula 2, and
a solvent,
wherein the monomer is included in the same or a higher amount than the polymer:

wherein, in the above Chemical Formulae 1 and 2,
R 1 is a single bond or a substituted or unsubstituted C1 to C10 alkylene group,
R 2 to R 6 are each independently hydrogen, a hydroxy group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C7 to C20 arylalkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C1 to C20 aldehyde group, a substituted or unsubstituted C1 to C4 alkyl ether, a substituted or unsubstituted C7 to C20 arylalkylene ether, a substituted or unsubstituted C1 to C30 haloalkyl group, or a combination thereof,
AR1 and AR2 are each independently a substituted or unsubstituted C6 to C20 aryl group,
x+y=1, 0≦x≦1 and 0≦y≦1, and
n is an integer ranging from 1 to 200.

2. The hardmask composition of claim 1 , wherein the polymer and the monomer are included in a weight ratio of about 1:9 to about 5:5.

3. The hardmask composition of claim 1 , wherein the AR1 and AR2 each independently include at least one selected from groups listed in the following Group 1:

wherein, R 7 and R 8 are each independently hydrogen, a hydroxy group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C7 to C20 arylalkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C1 to C20 aldehyde group, a substituted or unsubstituted C1 to C4 alkyl ether, a substituted or unsubstituted C7 to C20 arylalkylene ether, a substituted or unsubstituted C1 to C30 haloalkyl group, or a combination thereof.

4. The hardmask composition of claim 1 , wherein the polymer includes a repeating unit represented by the following Chemical Formula 1 a:

wherein, in the above Chemical Formula 1 a,
x+y=1, 0≦x≦1, and 0≦y≦1, and
n is an integer ranging from 1 to 200.

5. The hardmask composition of claim 1 , wherein the monomer is represented by one of the following Chemical Formulae 2a to 2d:

6. The hardmask composition of claim 1 , wherein the polymer has a weight average molecular weight of 1,000 to 100,000 g/mol.

7. The hardmask composition of claim 1 , wherein the total amount of the polymer and the monomer is 1 to 50 parts by weight based on 100 parts by weight of the solvent.

8. The hardmask composition of claim 1 , further comprising at least one of a surfactant, an acid catalyst, or a cross-linking agent.

9. The hardmask composition of claim 8 , wherein the surfactant, acid catalyst, or cross-linking agent are included in an amount of 0.001 to 3 parts by weight based on 100 parts by weight of the hardmask composition.

10. A method of forming patterns, the method comprising:
providing a material layer on a substrate,
applying the hardmask composition of claim 1 on the material layer
heat-treating the hardmask composition to form a hardmask layer,
forming a silicon-containing thin film on the hardmask layer,
forming a photoresist layer on the silicon-containing thin film,
exposing and developing the photoresist layer to form a photoresist pattern,
selectively removing the silicon-containing thin film and the hardmask layer using the photoresist pattern to expose a part of the material layer, and
etching an exposed part of the material layer.

11. The method of claim 10 , wherein after forming the silicon-containing thin film, a bottom anti-reflective coating (BARC) is further formed on the silicon-containing thin film.

12. The method of claim 10 , wherein the hardmask composition is applied using a spin-on coating method.

13. The method of claim 10 , wherein the hardmask layer is heat-treated at 150 to 500° C.

14. The hardmask composition of claim 1 , wherein the monomer is included in the composition in an amount greater than an amount in which the polymer is included in the composition.

15. The hardmask composition of claim 1 , wherein AR1 and AR2 are different from one another.

Assignees

• Cheil Ind Inc
• Cheil Ind Inc

Inventors

• Lee Chul-Ho
• Park You-Jung
• Yoon Yong-Woon
• Lee Sung-Jae
• Cho Youn-Jin
• Kim Young-Min
• Lee Chung-Heon

Classifications

• G03F7/0035

  Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface · CPC title

• G03F7/004 Primary

  Photosensitive materials (G03F7/12, G03F7/14 take precedence) · CPC title

• G03F7/094 Primary

  Multilayer resist systems, e.g. planarising layers · CPC title

• G03F7/0045 Primary

  with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

• G03F7/26

  Processing photosensitive materials; Apparatus therefor (G03F7/12 - G03F7/24 take precedence) · CPC title