Method of manufacturing EUV photo masks
US-12085843-B2 · Sep 10, 2024 · US
Extreme ultraviolet lithography process and mask
US9529249B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9529249-B2 |
| Application number | US-201414331974-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 15, 2014 |
| Priority date | Nov 15, 2013 |
| Publication date | Dec 27, 2016 |
| Grant date | Dec 27, 2016 |
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Abstract
Official abstract text for this publication.
A system of an extreme ultraviolet lithography (EUVL) is disclosed. The system includes a mask having reflective phase-shift-grating-blocks (PhSGBs). The system also includes an illumination to expose the mask to produce a resultant reflected light from the mask. The resultant reflected light contains mainly diffracted lights. The system also has projection optics to collect and direct resultant reflected light to expose a target.
First claim
Opening claim text (preview).
What is claimed is: 1. An extreme ultraviolet (EUV) lithography system, comprising: a mask having a plurality of reflective phase-shift-grating-blocks (PhSGBs); an illumination source to expose the mask to produce a resultant reflected light reflected from the mask, the resultant reflected light including reflected light from the reflective PhSGBs, wherein the resultant reflected light includes mainly diffracted lights; and optics to collect and direct the resultant reflected…
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Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
- G03F1/24Primary
Physics · mapped topic
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Frequently asked questions
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- What does patent US9529249B2 cover?
- A system of an extreme ultraviolet lithography (EUVL) is disclosed. The system includes a mask having reflective phase-shift-grating-blocks (PhSGBs). The system also includes an illumination to expose the mask to produce a resultant reflected light from the mask. The resultant reflected light contains mainly diffracted lights. The system also has projection optics to collect and direct resultan…
- Who is the assignee on this patent?
- Taiwan Semiconductor Mfg Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification G03F1/24. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Dec 27 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).