Sensor and Lithographic Apparatus
US-2015294998-A1 · Oct 15, 2015 · US
US9529182B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9529182-B2 |
| Application number | US-201414170384-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 31, 2014 |
| Priority date | Feb 13, 2013 |
| Publication date | Dec 27, 2016 |
| Grant date | Dec 27, 2016 |
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An improved solid-state laser for generating sub-200 nm light is described. This laser uses a fundamental wavelength between about 1030 nm and 1065 nm to generate the sub-200 nm light. The final frequency conversion stage of the laser creates the sub-200 nm light by mixing a wavelength of approximately 1109 nm with a wavelength of approximately 234 nm. By proper selection of non-linear media, such mixing can be achieved by nearly non-critical phase matching. This mixing results in high conversion efficiency, good stability, and high reliability.
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The invention claimed is: 1. An optical inspection system for inspecting a surface of a photomask, reticle, or semiconductor wafer for defects, the system comprising: a light source for emitting an incident light beam, the light source including a frequency mixing stage for combining light at a wavelength of approximately 1109 nm with light at a wavelength of approximately 234 nm to generate light at a wavelength between 190 nm and 200 nm; an optical system including a plurality…
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