Apparatus and method of forming an indium gallium zinc oxide layer
US-9214340-B2 · Dec 15, 2015 · US
Chemical vapor deposition using N,O polydentate ligand complexes of metals
US9528182B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9528182-B2 |
| Application number | US-201013377858-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 9, 2010 |
| Priority date | Jun 22, 2009 |
| Publication date | Dec 27, 2016 |
| Grant date | Dec 27, 2016 |
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Abstract
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Complexes of metals and N,O polydentate ligands are useful as precursors in the preparation of doped zinc oxide coatings by chemical vapor deposition.
First claim
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What is claimed is: 1. A chemical vapor deposition method of forming a doped layer comprised of zinc oxide and at least one metal-containing species selected from the group consisting of Al- and B-containing species on a substrate, comprising contacting a precursor vapor with the substrate to deposit the doped layer thereon, wherein the precursor vapor consists of at least one primary precursor comprising at least one zinc-containing compound, at least one secondary precursor compr…
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- C23C16/407Primary
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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Frequently asked questions
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- What does patent US9528182B2 cover?
- Complexes of metals and N,O polydentate ligands are useful as precursors in the preparation of doped zinc oxide coatings by chemical vapor deposition.
- Who is the assignee on this patent?
- Bluhm Martin E, Silverman Gary S, Korotkov Roman Y, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification C23C16/407. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Dec 27 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).