Process for fabrication of a micromechanical and/or nanomechanical structure comprising a porous surface

Patent metadata

Field	Value
Publication number	US-9527729-B2
Application number	US-201414182659-A
Country	US
Kind code	B2
Filing date	Feb 18, 2014
Priority date	Feb 19, 2013
Publication date	Dec 27, 2016
Grant date	Dec 27, 2016

Abstract

Process for fabrication of a micromechanical and/or nanomechanical structure comprising the following steps, starting from an element comprising a support substrate and a sacrificial layer:
a) formation of a first layer, at least part of which is porous, b) formation on the first layer of a layer made of one (or several) materials providing the mechanical properties of the structure, called the intermediate layer, c) formation on the intermediate layer of a second layer, at least part of which is porous, d) formation of said structure in the stack composed of the first layer, the intermediate layer and the second layer, e) release of said structure by at least partial removal of the sacrificial layer.

First claim

The invention claimed is:

1. Process for fabrication of a micromechanical and/or nanomechanical structure comprising the following steps, starting from an element comprising a support substrate and a sacrificial layer:
a) formation of a first layer on the sacrificial layer, at least part of the first layer being porous;
b) formation, on the first layer, an intermediate layer configured to provide the mechanical properties of the structure;
c) formation of a second layer on the intermediate layer to provide a stack including the first layer, the intermediate layer and the second layer, at least part of the second layer being porous;
d) formation of said micromechanical and/or nanomechanical structure in the stack composed of the first layer, the intermediate layer and the second layer; and
e) release of said structure by at least partial removal of the sacrificial layer.

2. Fabrication process according to claim 1 , in which the porous part of the second layer is at least partially superposed on the porous part of the first layer.

3. Fabrication process according to claim 1 , in which the part of the first layer and/or the part of the second layer has an open type porosity.

4. Fabrication process according to claim 1 , in which the materials in the first and/or second porous layers are chosen independently among semiconductors, dielectrics.

5. Fabrication process according to claim 4 , in which the materials in the first and/or second porous layers are low permittivity dielectrics.

6. Fabrication process according to claim 1 , in which step a) and/or step c) comprise a step for the deposition, growth or transfer of a layer onto the sacrificial layer and/or the intermediate layer.

7. Fabrication process according to claim 6 , in which the porous part of the first and/or the second layer is localised.

8. Fabrication process according to claim 7 , in which localisation is achieved by localised deposition, growth, transfer or localised etching.

9. Fabrication process according to claim 6 , in which step a) and/or step c) comprise a step to porosity at least one part of said layer.

10. Fabrication process according to claim 9 , in which a mask is made on said layer before the porosification step is done, so as to localise at least one zone of material to be made porous.

11. Fabrication process according to claim 9 in which porosification can be achieved electrochemically or by stain etching.

12. Fabrication process according to claim 1 , in which step d) in which said structure is formed in the stack composed of the first layer, the intermediate layer and the second layer comprises a lithography and anisotropic etching step of said stack.

13. Fabrication process according to claim 1 , in which the structure is released by isotropic etching of the sacrificial layer.

14. Fabrication process according to claim 1 , in which the material of the sacrificial layer is different from the material of the first layer, the second layer and the intermediate layer.

15. Fabrication process according to claim 1 , in which the first and second layers are made of porous silicon and the intermediate layer is made of monocrystalline silicon.

16. Fabrication process according to claim 1 , in which the first and second layers are made of porous SiGe and the intermediate layer is made of non-porous SiGe.

17. Fabrication process according to claim 1 , in which the first and second layers are made of porous SiC and the intermediate layer is made of non-porous SiC.

18. Fabrication process according to claim 1 , in which the structure comprises a fixed part and a suspended part on a support, and an actuating part configured to actuate the suspended part, and a detecting part configured to cause displacement of the suspended part, the suspended part being provided with at least one porous zone formed during steps a) and c) on a first face of the suspended part facing the support and on a second face of the suspended part opposite the first face.

19. Fabrication process according to claim 18 , in which the actuating part is electrostatic and comprises electrodes located on flanks of the fixed and suspended parts without any porous zone.

20. Fabrication process according to claim 18 , in which the detecting part is capacitive and comprises electrodes located on flanks of the fixed and suspended parts without any porous zone.

21. Fabrication process according to claim 18 , in which the detecting part comprises piezoresistive gauges extending between the fixed part and the suspended part, said gauges not being provided with a porous zone.

22. Fabrication process according to claim 18 , in which one or several porous lateral layers are also formed on flanks of the suspended part and/or the fixed part.

23. Fabrication process according to claim 1 , in which the micromechanical and/or nanomechanical structure is used for fabrication of a chemical and/or biological sensor, and/or a humidity sensor, the porous zones being designed to adsorb molecules of interest.

24. Fabrication process according to claim 1 , wherein the part of the first layer and/or the part of the second layer are at least one of microporous, mesoporous or macroporous.

25. Process for fabrication of a micromechanical and/or nanomechanical structure comprising the following steps, starting from an element comprising a support substrate and a sacrificial layer:
a) formation of a first layer on the sacrificial layer, at least part of the first layer being porous;
b) formation, on the first layer, an intermediate layer configured to provide the mechanical properties of the structure;
c) formation of a second layer on the intermediate layer to provide a stack including the first layer, the intermediate layer and the second layer, at least part of the second layer being porous;
d) formation of said micromechanical and/or nanomechanical structure in the stack composed of the first layer, the intermediate layer and the second layer; and
e) release of said structure by at least partial removal of the sacrificial layer,
wherein the material from which the first and/or second layer is made is a P-doped.

26. Process for fabrication of a micromechanical and/or nanomechanical structure comprising the following steps, starting from an element comprising a support substrate and a sacrificial layer:
a) formation of a first layer on the sacrificial layer, at least part of the first layer being porous;
b) formation, on the first layer, an intermediate layer configured to provide the mechanical properties of the structure;
c) formation of a second layer on the intermediate layer to provide a stack including the first layer, the intermediate layer and the second layer, at least part of the second layer being porous;
d) formation of said micromechanical and/or nanomechanical structure in the stack composed of the first layer, the intermediate layer and the second layer; and
e) release of said structure by at least partial removal of the sacrificial layer,
wherein the material from which the intermediate layer is made is a monocrystalline material.

27. Fabrication process according to claim 26 , in which step b) comprises the step for epitaxial growth of the intermediate layer on the first layer.

Assignees

• Commissariat A L'Energie Atomique Et Aux Ene Alt
• Commissariat Energie Atomique

Inventors

• Ollier Eric

Classifications

• B81C1/00626

  Processes for achieving a desired geometry not provided for in groups B81C1/00563 - B81C1/00619 · CPC title

• B81C1/00206 Primary

  Processes for functionalising a surface, e.g. provide the surface with specific mechanical, chemical or biological properties · CPC title

• B81C1/00412

  Mask characterised by its behaviour during the etching process, e.g. soluble masks · CPC title

• B81C2201/0115

  Porous silicon · CPC title

• B81C2201/038

  Processes for manufacturing substrate-free structures not provided for in B81C2201/034 - B81C2201/036 · CPC title