Low Power Nanoelectronics
US-2015333534-A1 · Nov 19, 2015 · US
Amplifiers including tunable tunnel field effect transistor pseudo resistors and related devices
US9526436B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9526436-B2 |
| Application number | US-201514729339-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 3, 2015 |
| Priority date | May 19, 2015 |
| Publication date | Dec 27, 2016 |
| Grant date | Dec 27, 2016 |
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Abstract
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Neural signal amplifiers include an operational amplifier and a feedback network coupled between an output and an input thereof. The feedback network includes a tunnel field effect transistor (“TFET”) pseudo resistor that exhibits bi-directional conductivity. A drain region of the TFET may be electrically connected to the gate electrode thereof to provide a bi-directional resistor having good symmetry in terms of resistance as a function of voltage polarity.
First claim
Opening claim text (preview).
What is claimed is: 1. An amplifier, comprising: an operational amplifier; and a feedback network coupled between an output of the operational amplifier and a first input of the operational amplifier, the feedback network comprising a first tunnel field effect transistor (“TFET”) pseudo resistor, wherein the first TFET pseudo resistor comprises: a source region having a first conductivity type; a drain region having a second conductivity type that is different from the first…
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Classifications
- H10D62/822Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9526436B2 cover?
- Neural signal amplifiers include an operational amplifier and a feedback network coupled between an output and an input thereof. The feedback network includes a tunnel field effect transistor (“TFET”) pseudo resistor that exhibits bi-directional conductivity. A drain region of the TFET may be electrically connected to the gate electrode thereof to provide a bi-directional resistor having good s…
- Who is the assignee on this patent?
- Samsung Electronics Co Ltd, Samsung Electronics Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D62/822. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Dec 27 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).