Flexible high-voltage thin film transistors

Patent metadata

Field	Value
Publication number	US-9525071-B2
Application number	US-201314380270-A
Country	US
Kind code	B2
Filing date	Feb 22, 2013
Priority date	Feb 22, 2012
Publication date	Dec 20, 2016
Grant date	Dec 20, 2016

Abstract

A flexible high-voltage thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a dielectric layer, and a flexible semiconductor layer. The flexible semiconductor layer serves as a channel for the transistor and is in electrical communication with the source electrode and the drain electrode. The drain electrode is laterally offset from the gate electrode. The dielectric layers is configured and arranged with respect to other elements of the transistor such that the transistor is stably operable to facilitate switching of relatively high drain voltages using relatively small controlling gate voltages.

First claim

What is claimed is:

1. A flexible high-voltage thin-film transistor comprising:
a gate electrode;
a source electrode;
a drain electrode;
a dielectric layer, wherein a first portion of the dielectric layer is disposed between the gate electrode and the source electrode, and wherein a second portion of the dielectric layer is disposed between the gate electrode and the drain electrode; and
a flexible semiconductor layer disposed between, and in electrical communication with, the source electrode and the drain electrode, the flexible semiconductor layer being electrically insulated from the gate electrode, and the flexible semiconductor layer comprising an ungated region laterally separating the gate electrode from the drain electrode.

2. The flexible high-voltage thin-film transistor of claim 1 , wherein the dielectric layer has a dielectric constant that is higher than about 4.0.

3. The flexible high-voltage thin-film transistor of claim 1 , wherein the dielectric layer has a dielectric constant that is higher than about 4.3, about 4.5, about 4.8, about 5.0, about 5.3, about 5.5, about 6.0, about 6.5, or about 7.0.

4. The flexible high-voltage thin-film transistor of claim 1 , wherein the dielectric layer comprises an organic material, an inorganic material, or a small molecule.

5. The flexible high-voltage thin-film transistor of claim 4 , wherein the organic dielectric material comprises a parylene, a polyvinylphenol, a polyvinylalchohol, a polythienylene vinylene, a functionalized pentacene, a polydimethylsiloxane, or any combination thereof.

6. The flexible high-voltage thin-film transistor of claim 4 , wherein the inorganic dielectric material comprises s an oxide or a nitride of aluminum, silicon, germanium, gallium, indium, tin, antimony, tellurium, bismuth, titanium, vanadium, chromium, manganese, cobalt, nickel, copper, zinc, zirconium, niobium, molybdenum, palladium, cadmium, hafnium, tantalum, or tungsten, or any combination thereof.

7. The flexible high-voltage thin-film transistor of claim 4 , wherein the inorganic dielectric material comprises aluminum oxide, bismuth zinc niobate, hafnium oxide, barium strontium titanate, silicon nitride, or any combination thereof.

8. The flexible high-voltage thin-film transistor of claim 1 , wherein the flexible semiconductor layer is formed from amorphous silicon deposited at a temperature below about 200° C., about 300° C., about 400° C., about 800° C., or about 1200° C.

9. The flexible high-voltage thin-film transistor of claim 1 , wherein the flexible semiconductor layer is formed from a pentacene or a tetracene.

10. The flexible high-voltage thin-film transistor of claim 1 , wherein, in operation, a voltage at the drain electrode can be maintained at greater than about 70V, about 85V, about 100V, about 125V, about 150V, about 200V, about 300V, about 400V, about 550V, or about 700V.

11. The flexible high-voltage thin-film transistor of claim 1 , further comprising a field plate disposed proximate to the flexible semiconductor layer at an area between the gate electrode and the drain electrode, wherein the field plate comprises a conductive material.

12. The flexible high-voltage thin-film transistor of claim 1 , wherein the dielectric layer comprises a composite of an organic dielectric material and an inorganic dielectric material.

13. The flexible high-voltage thin-film transistor of claim 12 , wherein the organic dielectric material has a breakdown capacity of greater than about 10 6 V/cm.

14. The flexible high-voltage thin-film transistor of claim 12 , wherein the inorganic dielectric material has a dielectric constant of greater than about 7.0.

Assignees

• Smith Melissa Alyson
• Akinwande Akintunde I
• Massachusetts Inst Technology

Inventors

• Smith Melissa Alyson
• Akinwande Akintunde I

Classifications

• B81B2207/015

  the micromechanical device and the control or processing electronics being integrated on the same substrate · CPC title

• Y02E10/549

  Organic PV cells · CPC title

• B81B3/0086

  Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage · CPC title

• H10D30/6746

  Amorphous silicon · CPC title

• H10K77/111 Primary

  Flexible substrates · CPC title