Integrated circuit and method of manufacturing an integrated circuit

Patent metadata

Field	Value
Publication number	US-9525058-B2
Application number	US-201314066976-A
Country	US
Kind code	B2
Filing date	Oct 30, 2013
Priority date	Oct 30, 2013
Publication date	Dec 20, 2016
Grant date	Dec 20, 2016

Abstract

An integrated circuit includes a power component including a plurality of first trenches in a cell array and a first conductive material in the first trenches electrically coupled to a gate terminal of the power component, and a diode component including a first diode device trench and a second diode device trench disposed adjacent to each other. A second conductive material in the first and the second diode device trenches is electrically coupled to a source terminal of the diode component. The first trenches, the first diode device trench and the second diode device trench are disposed in a first main surface of a semiconductor substrate. The integrated circuit further includes a diode gate contact including a connection structure between the first and the second diode device trenches. The connection structure is in contact with the second conductive material in the first and the second diode device trenches.

First claim

What is claimed is:

1. An integrated circuit, comprising:
a power component including a plurality of first trenches in a cell array and a first conductive material in the first trenches electrically coupled to a gate terminal of the power component;
a diode component including a first diode device trench and a second diode device trench disposed adjacent to each other, and a second conductive material in the first and the second diode device trenches electrically coupled to a source terminal of the diode component, the first trenches, the first diode device trench and the second diode device trench being disposed in a first main surface of a semiconductor substrate; and
a diode gate contact including a connection structure between the first and the second diode device trenches, the connection structure directly adjacent to the second conductive material in the first and the second diode device trenches,
wherein the plurality of first trenches, the first diode device trench and the second diode device trench run in a first direction,
wherein the connection structure runs in a second direction intersecting the first direction,
wherein the second direction is parallel to the first main surface.

2. The integrated circuit according to claim 1 , wherein the connection structure is a trench connection structure disposed in a further trench portion between the first and the second diode device trenches, the further trench portion being disposed in the first main surface of the semiconductor substrate.

3. The integrated circuit according to claim 1 , wherein the power component comprises power transistor cells including a first source region, a first drain region, and a first body region, the first conductive material in the first trenches implementing a first gate electrode adjacent to the first body region.

4. The integrated circuit according to claim 3 , wherein the diode component comprises a gate-controlled diode device including a second source region, a second drain region, and a second body region, the second conductive material in the first and the second diode device trenches implementing a second gate electrode, the second source region being coupled to the source terminal of the diode component.

5. The integrated circuit according to claim 4 , wherein the diode component further comprises a second gate dielectric disposed between the second gate electrode and the second body region, a thickness of the second gate dielectric being smaller than a thickness of a first gate dielectric between the first gate electrode and the first body region.

6. The integrated circuit according to claim 1 , wherein a width of the connection structure measured along the first direction is larger than a width of the first diode device trench and the second diode device trench measured along the second direction.

7. The integrated circuit according to claim 1 , wherein the first and the second diode device trenches are arranged at the same pitch as the plurality of first trenches.

8. An integrated circuit, comprising:
a power component including a plurality of first trenches in a cell array and a first conductive material in the first trenches coupled to a gate terminal of the power component;
a diode component including a first diode device trench and a second diode device trench disposed adjacent to each other, a second conductive material in the first and the second diode device trenches coupled to a source terminal of the diode component, the first and the second diode device trenches being disposed in a first main surface of a semiconductor substrate, the first and second diode device trenches running in a first direction; and
a diode gate contact including a connection structure between the first and the second diode device trenches, the connection structure being in contact with the second conductive material in the first diode device trench and in the second diode device trench and comprising a trench connection structure disposed in a further trench portion between the first and the second diode device trenches, the further trench portion being disposed in the first main surface of the semiconductor substrate and running in a second direction parallel to the first main surface and intersecting the first direction.

9. The integrated circuit according to claim 8 , wherein the plurality of first trenches run in the first direction.

10. The integrated circuit according to claim 8 , wherein the power component comprises power transistor cells including a first source region, a first drain region, and a first body region, the first conductive material in the first trenches implementing a first gate electrode adjacent to the first body region.

11. The integrated circuit according to claim 8 , wherein the diode component comprises a gate-controlled diode device including a second source region, a second drain region, and a second body region, the second conductive material in the first and the second diode device trenches implementing a second gate electrode, the second source region being coupled to the source terminal of the diode component.

12. The integrated circuit according to claim 8 , wherein the connection structure includes conductive material disposed over the first main surface, the connection structure being disposed between the first and the second diode device trenches.

13. The integrated circuit according to claim 8 , wherein a width of the connection structure measured along the first direction is larger than a width of the first diode device trench and the second diode device trench measured along the second direction.

14. The integrated circuit according to claim 8 , wherein the first and the second diode device trenches are arranged at the same pitch as the plurality of first trenches.

Assignees

• Infineon Technologies Austria Ag

Inventors

• Wutte Britta

Classifications

• H10D30/662

  having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region · CPC title

• H10D64/2527

  for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies · CPC title

• H10D30/66

  Vertical DMOS [VDMOS] FETs · CPC title

• H10D84/144

  in antiparallel diode configurations · CPC title

• H10D64/256

  for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673) · CPC title