Active area shaping of III-nitride devices utilizing a field plate defined by a dielectric body

Patent metadata

Field	Value
Publication number	US-9525052-B2
Application number	US-201314081869-A
Country	US
Kind code	B2
Filing date	Nov 15, 2013
Priority date	Jan 10, 2007
Publication date	Dec 20, 2016
Grant date	Dec 20, 2016

Abstract

In an exemplary implementation, a III-nitride semiconductor device includes a III-nitride heterojunction including a first III-nitride body situated over a second III-nitride body to form a two-dimensional electron gas. The III-nitride semiconductor device further includes a gate well formed in a dielectric body, the dielectric body situated over the III-nitride heterojunction. The III-nitride semiconductor device also includes a gate arrangement situated in the gate well and including a gate electrode and a field plate. The field plate includes at least two steps, the at least two steps being defined in the dielectric body.

First claim

The invention claimed is:

1. A III-nitride semiconductor device comprising:
a III-nitride heterojunction including a first III-nitride body situated over a second III-nitride body to form a two-dimensional electron gas;
a single gate dielectric layer situated over said III-nitride heterojunction;
a gate well formed in a dielectric body, said dielectric body comprising a first dielectric material and a second dielectric material and being situated over said III-nitride heterojunction and said single gate dielectric layer;
first and second ohmic electrodes extending through said dielectric body and said single gate dielectric layer to contact said III-nitride heterojunction;
a gate arrangement situated in said gate well and comprising a gate electrode and a field plate;
said field plate comprising at least three steps situated within said gate well, said at least three steps being defined in said first dielectric material and said second dielectric material of said dielectric body;
wherein at least one of said at least three steps is wider than another of said at least three steps,
wherein said dielectric body comprises a plurality of dielectric layers each formed from one of said first dielectric material and said second dielectric material.

2. The III-nitride semiconductor device of claim 1 , wherein each step of said at least three steps is defined by a respective opening in said dielectric body.

3. The III-nitride semiconductor device of claim 1 , wherein said dielectric body comprises at least one silicon nitride layer and at least one silicon oxide layer.

4. The III-nitride semiconductor device of claim 1 , wherein said at least three steps are defined by ledges of said dielectric body.

5. The III-nitride semiconductor device of claim 1 , wherein each step of said at least three steps is defined by a respective ledge of said dielectric body.

6. The III-nitride semiconductor device of claim 1 , wherein said field plate is a drain-side field plate.

7. The III-nitride semiconductor device of claim 1 , wherein said gate well is of a first width defined by a first dielectric layer of said dielectric body, and is of a second width defined by a second dielectric layer of said dielectric body, said second width being greater than said first width.

8. The III-nitride semiconductor device of claim 1 , wherein said gate arrangement fills said gate well.

9. The III-nitride semiconductor device of claim 1 , wherein said field plate is a drain-side field plate and further comprising a source-side field plate comprising at least another three steps, said at least another three steps being defined in said dielectric body.

10. A III-nitride semiconductor device comprising:
a III-nitride heterojunction including a first III-nitride body situated over a second III-nitride body to form a two-dimensional electron gas;
a single gate dielectric layer situated over said III-nitride heterojunction;
a gate well defined by openings in a plurality of dielectric layers, each of said plurality of dielectric layers being formed of one of a first dielectric material and a second dielectric material and being situated over said III-nitride heterojunction and said single gate dielectric layer;
first and second ohmic electrodes extending through said plurality of dielectric layers and said single gate dielectric layer to contact said III-nitride heterojunction;
a gate arrangement situated in said gate well and comprising a gate electrode and a field plate;
said field plate comprising at least three steps situated within said gate well, said at least three steps being defined by said openings in said plurality of dielectric layers;
wherein at least one of said at least three steps is wider than another of said at least three steps.

11. The III-nitride semiconductor device of claim 10 , wherein each step of said at least three steps is defined by a respective opening in said plurality of dielectric layers.

12. The III-nitride semiconductor device of claim 10 , wherein said gate well is of a first width defined by a first dielectric layer of said plurality of dielectric layers, and is of a second width defined by a second dielectric layer of said plurality of dielectric layers, said second width being greater than said first width.

13. The III-nitride semiconductor device of claim 10 , wherein each step of said at least three steps is defined by a respective ledge of said plurality of dielectric layers.

14. The III-nitride semiconductor device of claim 10 , wherein said field plate is integrated with said gate electrode.

15. The III-nitride semiconductor device of claim 10 , wherein said field plate is a drain-side field plate and further comprising a source-side field plate comprising at least another three steps, said at least another three steps being defined by said openings in said plurality of dielectric layers.

16. The III-nitride semiconductor device of claim 15 , wherein said drain-side field plate is wider than said source-side field plate.

17. The III-nitride semiconductor device of claim 10 , wherein said field plate is situated over said plurality of dielectric layers.

Assignees

• Int Rectifier Corp
• Infineon Technologies Americas Corp

Inventors

• Briere Michael A

Classifications

• H10D64/01358 Primary

  the insulator being formed after the semiconductor body, the semiconductor being a Group III-V material · CPC title

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title

• H10D64/693

  the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials · CPC title

• H10D64/518

  characterised by their lengths or sectional shapes · CPC title

• H10D64/111

  Field plates · CPC title