Semiconductor device and method for growing semiconductor crystal

Patent metadata

Field	Value
Publication number	US-9525030-B2
Application number	US-201214128967-A
Country	US
Kind code	B2
Filing date	Jun 13, 2012
Priority date	Jun 23, 2011
Publication date	Dec 20, 2016
Grant date	Dec 20, 2016

Abstract

A semiconductor device according to the embodiment comprises a base substrate; patterns on the base substrate; and an epitaxial layer on the base substrate, wherein the epitaxial layer is formed on a surface of the substrate exposed among the patterns. A method for growing a semiconductor crystal comprises the steps of cleaning a silicon carbide substrate; forming patterns on the silicon carbide substrate; and forming an epitaxial layer on the silicon carbide substrate.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a base substrate;
patterns on the base substrate;
an epitaxial layer on the base substrate;
wherein the base substrate and the epitaxial layer comprise the same material,
wherein the base substrate and the epitaxial layer comprise SiC having the same crystal structure,
wherein the patterns protrude vertically from the base substrate,
wherein a height of each pattern is greater than twice a diameter of a bottom surface of that pattern, and
wherein the epitaxial layer is formed through epitaxial lateral over growth (ELOG).

2. The semiconductor device of claim 1 , wherein the epitaxial layer is horizontally formed on one surface of the base substrate exposed among the patterns and fills gaps among the patterns.

3. The semiconductor device of claim 1 , wherein the patterns have an elliptic cone shape with a long axis length in a range of 10 nm to 300 nm and a height of 100 nm or less.

4. The semiconductor device of claim 1 , wherein the protruding patterns comprise silicon oxide.

5. The semiconductor device of claim 1 , wherein the protruding patterns comprise carbon oxide.

6. A semiconductor device comprising:
a base substrate including patterns;
an epitaxial layer on the base substrate;
wherein the base substrate and the epitaxial layer comprise the same material,
wherein the base substrate and the epitaxial layer comprise SiC having the same crystal structure,
wherein the patterns include a concave groove that is vertically oriented from the base substrate,
wherein an interior of the concave groove is filled with SiC, and
wherein the epitaxial layer is formed through epitaxial lateral over growth (ELOG).

7. The semiconductor device of claim 6 , wherein the patterns have an elliptic shape, a rectangular shape, or a triangular shape.

8. The semiconductor device of claim 6 , wherein an interval between the patterns is in a range of 10 nm to 100 nm.

9. The semiconductor device of claim 6 , wherein each groove has a depth in a range of 5 nm to 1000 nm.

Assignees

• Hwang Min Young
• Kang Seok Min
• Kim Moo Seong
• Jo Yeong Deuk
• Lg Innotek Co Ltd

Inventors

• Hwang Min Young
• Kang Seok Min
• Kim Moo Seong
• Jo Yeong Deuk

Classifications

• H10P14/2925

  Surface structures · CPC title

• H10P14/2904 Primary

  Silicon carbide · CPC title

• H10P14/276

  Lateral overgrowth · CPC title

• H10P14/271

  characterised by the preparation of substrate for selective deposition · CPC title

• H10D62/8325 Primary

  Silicon carbide · CPC title