Image sensor device with sensing surface cavity and related methods

Patent metadata

Field	Value
Publication number	US-9525002-B2
Application number	US-201514589210-A
Country	US
Kind code	B2
Filing date	Jan 5, 2015
Priority date	Jan 5, 2015
Publication date	Dec 20, 2016
Grant date	Dec 20, 2016

Abstract

An image sensor device may include an interconnect layer, an image sensor IC carried by the interconnect layer and having an image sensing surface, and encapsulation material laterally surrounding the image sensor IC and covering an upper surface of the image sensor IC up to the image sensing surface. The image sensor device may include an optical plate having a peripheral lower surface carried by an upper surface of the encapsulation material and aligned with the image sensing surface, the optical plate being spaced above the image sensing surface to define an internal cavity, and a lens assembly coupled to the encapsulation material and aligned with the image sensing surface.

First claim

That which is claimed is:

1. An image sensor device comprising:
an interconnect layer;
an image sensor integrated circuit (IC) carried by said interconnect layer and having an image sensing surface;
encapsulation material laterally surrounding said image sensor IC and covering an upper surface of said image sensor IC up to said image sensing surface;
an optical plate having a peripheral lower surface carried by an upper surface of said encapsulation material and aligned with the image sensing surface, said optical plate being spaced above said image sensing surface to define an internal cavity;
an annular adhesive layer contacting lateral sides of said optical plate, surrounding said optical plate, and fixing said optical plate to the upper surface of said encapsulation material; and
a lens assembly coupled to said encapsulation material and aligned with said image sensing surface, the annular adhesive layer being between said lens assembly and the lateral sides of said optical plate.

2. The image sensor device of claim 1 wherein said lens assembly is spaced apart from the lateral sides of said optical plate and said annular adhesive layer.

3. The image sensor device of claim 1 wherein said optical plate comprises an infrared (IR) filter.

4. The image sensor device of claim 1 wherein said optical plate comprises an antireflective plate.

5. The image sensor device of claim 1 wherein said image sensor IC comprises a semiconductor substrate defining said image sensing surface, and a plurality of electrically conductive bond pads on said semiconductor substrate.

6. The image sensor device of claim 5 further comprising a plurality of bond wires coupled between said plurality of bond pads and said interconnect layer.

7. The image sensor device of claim 1 wherein said interconnect layer comprises a plurality of electrically conductive traces therein, and a plurality of electrically conductive contacts coupled respectively to said plurality of electrically conductive traces.

8. The image sensor device of claim 1 further comprising an electronic component in said encapsulation material and being coupled to said interconnect layer.

9. The image sensor device of claim 1 further comprising an adhesive layer between said encapsulation material and said lens assembly.

10. An image sensor device comprising:
an interconnect layer;
an image sensor integrated circuit (IC) carried by said interconnect layer and comprising an image sensing surface, and a plurality of micro lenses on said image sensing surface;
encapsulation material laterally surrounding said image sensor IC and covering an upper surface of said image sensor IC up to said image sensing surface;
an optical plate having a peripheral lower surface carried by an upper surface of said encapsulation material and aligned with the image sensing surface, said optical plate being spaced above said image sensing surface to define an internal cavity;
an annular adhesive layer contacting lateral sides of said optical plate, surrounding said optical plate, and fixing said optical plate to the upper surface of said encapsulation material;
a lens assembly coupled to said encapsulation material and aligned with said image sensing surface, said lens assembly being spaced apart from the lateral sides of said optical plate and said annular adhesive layer, the annular adhesive layer being between said lens assembly and the lateral sides of said optical plate; and
an adhesive layer between said encapsulation material and said lens assembly.

11. The image sensor device of claim 10 wherein said optical plate comprises an infrared (IR) filter.

12. The image sensor device of claim 10 wherein said optical plate comprises an antireflective plate.

13. The image sensor device of claim 10 wherein said image sensor IC comprises a semiconductor substrate defining said image sensing surface, and a plurality of electrically conductive bond pads on said semiconductor substrate.

14. The image sensor device of claim 13 further comprising a plurality of bond wires coupled between said plurality of bond pads and said interconnect layer.

15. The image sensor device of claim 10 wherein said interconnect layer comprises a plurality of electrically conductive traces therein, and a plurality of electrically conductive contacts coupled respectively to said plurality of electrically conductive traces.

16. A method for making an image sensor device comprising:
positioning an image sensor integrated circuit (IC), the image sensor IC being carried by an interconnect layer and having an image sensing surface;
forming encapsulation material laterally surrounding the image sensor IC and covering an upper surface of the image sensor IC up to the image sensing surface;
positioning an optical plate, the optical plate having a peripheral lower surface carried by an upper surface of the encapsulation material and aligned with the image sensing surface, the optical plate being spaced above the image sensing surface to define an internal cavity;
forming an annular adhesive layer contacting lateral sides of the optical plate, surrounding the optical plate, and fixing the optical plate to the upper surface of the encapsulation material; and
coupling a lens assembly to the encapsulation material and aligned with the image sensing surface, the annular adhesive layer being between the lens assembly and the lateral sides of the optical plate.

17. The method of claim 16 wherein the image sensor IC comprises a tape layer covering the image sensing surface; and further comprising removing the tape layer to define a recess in the encapsulation material aligned with the image sensing surface.

18. The method of claim 16 wherein the lens assembly is spaced apart from the lateral sides of the optical plate and the annular adhesive layer.

19. The method of claim 16 wherein the optical plate comprises an infrared (IR) filter.

20. The method of claim 16 wherein the optical plate comprises an antireflective plate.

21. The method of claim 16 wherein the image sensor IC comprises a semiconductor substrate defining the image sensing surface, and a plurality of electrically conductive bond pads on the semiconductor substrate.

22. The method of claim 21 further comprising coupling a plurality of bond wires between the plurality of bond pads and the interconnect layer.

Assignees

• St Microelectronics Pte Ltd

Inventors

• Wong Wing Shenq

Classifications

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/0198

  batch processes · CPC title

• H01L27/14618

  Electricity · mapped topic

• H01L27/14625

  Electricity · mapped topic

• H01L27/14685

  Electricity · mapped topic