Cu pillar bump with L-shaped non-metal sidewall protection structure

Patent metadata

Field	Value
Publication number	US-9524945-B2
Application number	US-78198710-A
Country	US
Kind code	B2
Filing date	May 18, 2010
Priority date	May 18, 2010
Publication date	Dec 20, 2016
Grant date	Dec 20, 2016

Abstract

An L-shaped sidewall protection process is used for Cu pillar bump technology. The L-shaped sidewall protection structure is formed of at least one of non-metal material layers, for example a dielectric material layer, a polymer material layer or combinations thereof.

First claim

What is claimed is:

1. An integrated circuit device, comprising:
a bump structure formed on a semiconductor substrate, wherein the bump structure comprises a top surface and a sidewall surface, the bump structure further comprises a solder layer, and the semiconductor substrate comprises a surface region adjacent to the sidewall surface of the bump structure; and
an L-shaped protection structure covering the sidewall surface of the bump structure and extending to the surface region of the semiconductor substrate,
wherein the L-shaped protection structure is formed of a non-metal material layer, and the L-shaped protection structure has an upper surface that is higher than the top surface of the bump structure.

2. The integrated circuit device of claim 1 , wherein the L-shaped protection structure comprises a silicon nitride layer.

3. The integrated circuit device of claim 1 , wherein the L-shaped protection structure comprises a polyimide layer.

4. The integrated circuit device of claim 1 , wherein the L-shaped protection structure comprises at least one of a dielectric layer, a polymer layer or combinations thereof.

5. The integrated circuit device of claim 1 , wherein the bump structure comprises a conductive pillar.

6. The integrated circuit device of claim 5 , wherein the conductive pillar is a copper pillar.

7. The integrated circuit device of claim 5 , wherein the bump structure comprises a cap layer on the conductive pillar, and the cap layer is between the conductive pillar and the solder layer.

8. The integrated circuit device of claim 7 , wherein the cap layer comprises a nickel layer.

9. A packaging assembly, comprising:
a first substrate;
a bump structure formed on the first substrate, wherein the bump structure comprises an under-bump-metallurgy (UBM) layer formed on the first substrate, a copper pillar formed on the UBM layer, and a solder layer on the copper pillar, and the bump structure has a sidewall surface adjacent to a surface region of the first substrate;
an L-shaped protection structure covering the sidewall surface of the bump structure and extending to the surface region of the first substrate, wherein the L-shaped protection structure is formed of a non-metal material layer,
a second substrate; and
a joint solder layer formed between the second substrate and the solder layer of the bump structure.

10. The packaging assembly of claim 9 , wherein the L-shaped protection structure comprises at least one of a silicon nitride layer, a polyimide layer or combinations thereof.

11. The packaging assembly of claim 9 , wherein the bump structure has a top surface substantially coplanar with an upper surface of the L-shaped protection.

12. The packaging assembly of claim 9 , wherein the bump structure has a top surface lower than an upper surface of the L-shaped protection.

13. An integrated circuit device, comprising:
a bump structure formed on a substrate, wherein the bump structure comprises a first top surface and a first sidewall surface, and the substrate comprises a surface region adjacent to the sidewall surface of the bump structure;
a cap layer over the bump structure, the cap layer having a second top surface and a second sidewall surface; and
an L-shaped protection structure covering the first sidewall surface and the second sidewall surface, and extending along the surface region of the semiconductor substrate,
wherein the second top surface is lower than an upper surface of the L-shaped protection structure, and the L-shaped protection structure is formed of a non-metal material layer.

14. The integrated circuit device of claim 13 , further comprising a solder layer over the cap layer, the solder layer having a third top surface and a third sidewall surface, wherein the L-shaped protection structure covers the third sidewall surface.

15. The integrated circuit device of claim 14 , wherein the upper surface of the L-shaped protection structure is substantially coplanar with the third top surface.

16. The integrated circuit device of claim 14 , wherein the third top surface is lower than the upper surface of the L-shaped protection structure.

17. The integrated circuit of claim 13 , wherein the bump structure comprises:
at least one under bump metallurgy (UBM) layer over the substrate; and
a conductive pillar over the at least one UBM layer.

18. The integrated circuit of claim 13 , wherein the cap layer has a thickness ranging from 1 micrometer (μm) to 10 μm.

19. The package assembly of claim 9 , wherein the bump structure further comprises a cap layer between the copper pillar and the solder layer.

20. The integrated circuit of claim 1 , wherein the bump structure further comprises an under bump metallurgy (UBM) layer, the UBM layer comprising:
a diffusion barrier layer on the semiconductor substrate; and
a seed layer over the diffusion barrier layer.

Assignees

• Hwang Chien Ling
• Wu Yi-Wen
• Liu Chung-Shi
• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Hwang Chien Ling
• Wu Yi-Wen
• Liu Chung-Shi

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/722

  between stacked chips · CPC title

• H10W72/07236

  Soldering or alloying · CPC title

• H10W72/01938

  in gaseous form, e.g. by CVD or PVD · CPC title

• H10W72/01257

  by reflowing · CPC title