Manufacturing method of semiconductor manufacturing apparatus and semiconductor manufacturing apparatus
US-2015011094-A1 · Jan 8, 2015 · US
Multiheight electrically conductive via contacts for a multilevel interconnect structure
US9524901B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9524901-B2 |
| Application number | US-201414501389-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 30, 2014 |
| Priority date | Sep 30, 2014 |
| Publication date | Dec 20, 2016 |
| Grant date | Dec 20, 2016 |
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Abstract
Official abstract text for this publication.
A method of making multi-level contacts includes providing an in-process multilevel device having a device region and a contact region including a stack of alternating sacrificial layers and insulating layers located over a major surface of a substrate. A contact mask having contact mask openings is provided over the stack, and a first over mask having first over mask openings is provided over the contact mask. A subset of the contact mask openings is substantially aligned with the first over mask openings. Contact openings are formed through the stack, wherein each of the contact openings extends substantially perpendicular to the major surface of the substrate to a respective one of the sacrificial layers. A plurality of electrically conductive via contacts is formed in the plurality of the contact openings.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of making multi-level contacts, comprising: providing an in-process multilevel device comprising a device region and a contact region comprising a stack of plurality of alternating sacrificial layers and insulating layers located over a major surface of a substrate; providing a contact mask with a plurality of contact mask openings over the stack; providing a first over mask with a plurality of first over mask openings over the contact mask, whe…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10W20/083Primary
Electricity · mapped topic
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- What does patent US9524901B2 cover?
- A method of making multi-level contacts includes providing an in-process multilevel device having a device region and a contact region including a stack of alternating sacrificial layers and insulating layers located over a major surface of a substrate. A contact mask having contact mask openings is provided over the stack, and a first over mask having first over mask openings is provided over …
- Who is the assignee on this patent?
- Sandisk Technologies Inc, Sandisk Technologies Llc
- What technology area does this patent fall under?
- Primary CPC classification H10W20/083. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Dec 20 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).