Silicon-containing resist underlayer film-forming composition having sulfone structure

Patent metadata

Field	Value
Publication number	US-9524871-B2
Application number	US-201214236136-A
Country	US
Kind code	B2
Filing date	Aug 10, 2012
Priority date	Aug 10, 2011
Publication date	Dec 20, 2016
Grant date	Dec 20, 2016

Abstract

A composition for forming a resist underlayer film for lithography, including: as a silane, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, or a hydrolysis-condensation product of the hydrolyzable organosilane, wherein the hydrolyzable organosilane is a compound of Formula (1):

[(R 1 ) a Si(R 2 ) (3−a) ] b (R 3 )  Formula (1)

[in Formula (1), R 3 is an organic group having a sulfonyl group and a light-absorbing group and is bonded to a Si atom through a Si—C bond; R 1 is an alkyl, aryl, aralkyl, halogenated alkyl, halogenated aryl, halogenated aralkyl, alkenyl, an organic group having an epoxy, acryloyl, methacryloyl, mercapto, alkoxyaryl, acyloxyaryl, isocyanurate, hydroxy, cyclic amino, or a cyano group, or a combination of any of these groups and is bonded to a Si atom through a Si—C bond; R 2 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 0 to 2; and b is an integer of 1 to 3].

First claim

The invention claimed is:

1. A composition for forming a resist underlayer film for lithography, comprising a co-hydrolysis condensation product of a hydrolyzable organosilane of the following Formula (1) and at least one organic silicon compound selected from the group consisting of the following Formula (3) and the following Formula (4):
[(R 1 ) a Si(R 2 ) (3−a) ] b (R 3 )  Formula (1)

[in Formula (1), R 1 is an alkyl group, an aryl group, an aralkyl group, a halogenated alkyl group, a halogenated aryl group, a halogenated aralkyl group, an alkenyl group, an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an alkoxyaryl group, an acyloxyaryl group, an isocyanurate group, a hydroxy group, a cyclic amino group, or a cyano group, or a combination of any of these groups and is bonded to a Si atom through a Si—C bond; R 2 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 0 to 2; and b is an integer of 1 to 3],
R 1 a Si(R 2 ) 4−a   Formula (3)

[in Formula (3), R 1 is an alkyl group, an aryl group, an aralkyl group, a halogenated alkyl group, a halogenated aryl group, a halogenated aralkyl group, an alkenyl group, an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an alkoxyaryl group, an acyloxyaryl group, an isocyanurate group, a hydroxy group, a cyclic amino group, or a cyano group, or a combination of any of these groups and is bonded to a silicon atom through a Si—C bond; R 2 is an alkoxy group, an acyloxy group, or a halogen group; and a is an integer of 0 to 3],
[R 1 c Si(R 2 ) 3−c ] 2 Y b   Formula (4)

[in Formula (4), R 1 is an alkyl group; R 2 is an alkoxy group, an acyloxy group, or a halogen group; Y is an alkylene group or an arylene group; b is an integer of 0 or 1; and c is an integer of 0 or 1], wherein
R 3 in Formula (1) is a group of Formula (2):

[in Formula (2), one to three groups of groups of R 4 , Ar 1 , R 5 , Ar 2 , and R 6 are bonded to a Si atom through a Si—C bond; R 4 is a monovalent to tetravalent hydrocarbon group optionally having a sulfide bond or an ether bond; R 5 is a divalent to tetravalent hydrocarbon group optionally having a sulfide bond or an ether bond; R 6 is an optionally substituted monovalent to tetravalent hydrocarbon group; each of Ar 1 and Ar 2 is an optionally substituted C 6-20 arylene group or an optional substituted C 6-20 aryl group; n 2 is an integer of 1; each of n 1 , n 3 , n 4 , and n 5 is an integer of 0 or 1; and n 4 and n 5 are not simultaneously an integer of 0].

2. The composition for forming a resist underlayer film according to claim 1 , wherein the co-hydrolysis-condensation product is of the compound of Formula (1) and the compound of Formula (3) and is included as a polymer.

3. The composition for forming a resist underlayer film according to claim 1 , further comprising an acid.

4. The composition for forming a resist underlayer film according to claim 1 , further comprising water.

5. The composition for forming a resist underlayer film according to claim 1 , further comprising an ammonium compound, a cyclic ammonium compound, a cyclic amine compound, or a sulfonium compound.

6. A resist underlayer film obtained by applying the composition for forming a resist underlayer film as claimed in claim 1 onto a semiconductor substrate and baking the composition.

7. A method for producing a semiconductor device, the method comprising:
applying the composition for forming a resist underlayer film as claimed in claim 1 onto a semiconductor substrate and baking the composition to faun a resist underlayer film;
applying a composition for a resist onto the resist underlayer film to form a resist film;
exposing the resist film to light;
after the light exposure, developing the resist film to form a resist pattern;
etching the resist underlayer film using the resist pattern; and
fabricating the semiconductor substrate using the resist film thus patterned and the resist underlayer film thus patterned.

8. A method for producing a semiconductor device, the method comprising:
forming an organic underlayer film on a semiconductor substrate;
applying the composition for forming a resist underlayer film as claimed in claim 1 onto the organic underlayer film and baking the composition to form a resist underlayer film;
applying a composition for a resist onto the resist underlayer film to form a resist film;
exposing the resist film to light;
after the light exposure, developing the resist film to form a resist pattern;
etching the resist underlayer film using the resist pattern;
etching the organic underlayer film using the resist underlayer film thus patterned; and
fabricating the semiconductor substrate using the organic underlayer film thus patterned.

9. The composition for forming a resist underlayer film for lithography according to claim 1 , wherein b in Formula (1).

10. The composition for forming a resist underlayer film according to claim 1 , further comprising:
a hydrolyzable organosilane consisting of a hydrolyzable organosilane of Formula (1) and at least one hydrolyzable organosilane selected from the group consisting of Formula (3) and Formula (4); or
a co-hydrolyzable product of the hydrolyzable organosilane.

11. A compound selected from the following group of compounds:

Assignees

• Nakajima Makoto
• Sakuma Daisuke
• Kanno Yuta
• Kishioka Takahiro
• Nissan Chemical Ind Ltd

Inventors

• Nakajima Makoto
• Sakuma Daisuke
• Kanno Yuta
• Kishioka Takahiro

Classifications

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P76/2041 Primary

  Photolithographic processes · CPC title

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• C07F7/182

  Chemistry & Metallurgy · mapped topic