Nanoimprint lithography

Patent metadata

Field	Value
Publication number	US-9523910-B2
Application number	US-201113699996-A
Country	US
Kind code	B2
Filing date	May 26, 2011
Priority date	May 28, 2010
Publication date	Dec 20, 2016
Grant date	Dec 20, 2016

Abstract

The present invention relates to a nanoimprint lithography method. Said nanoimprint lithography method comprises: a preparation step during which a resin ( 120 ) is placed on a substrate ( 130 ); a step of pressing a mold ( 200, 300, 400, 500 ), comprising raised patterns ( 202 ), in order to transfer the raised patterns ( 202 ) of the mold ( 200, 300, 400, 500 ) into the resin ( 120 ) so as to form designs ( 230 ) therein, which each have at least one end; and a removal step for separating the mold ( 200, 300, 400, 500 ) from the resin ( 120 ), characterized in that the resin ( 120 ) is a positive photosensitive resin, in that it includes an exposure step for activating the resin ( 120 ) before or after the step of removing the mold ( 200, 300, 400, 500 ), and in that it includes, prior to the exposure step, a masking step during which a mask coating ( 110, 310 ), partially stopping at least the exposure of the resin ( 120 ) that it covers and only covering the resin ( 120 ) outside the end of the designs ( 230 ), is placed between the mold ( 200, 300, 400, 500 ) and the resin ( 120 ).

First claim

The invention claimed is:

1. A nanoimprint lithography method, comprising:
pressing a mold comprising reliefs having sidewalls and ends into a masking coating and a photosensitive resin, wherein the masking coating is disposed on the photosensitive resin and the photosensitive resin is disposed on a substrate, thereby forming patterns having sidewalls and ends, defined by the reliefs, in the masking coating and the photosensitive resin, wherein the masking coating covers all the photosensitive resin outside the patterns and at least part of the sidewalls of the patterns and leaves at least the ends of the patterns uncovered;
separating the mold from the masking coating and the photosensitive resin; and,
before or after the separating, exposing the photosensitive resin, to activate the photosensitive resin.

2. The method of claim 1 , wherein the masking coating covers the side-walls of the patterns at a height greater than a thickness of the masking coating on the photosensitive resin.

3. The method of claim 1 , further comprising, after said exposing:
developing the photosensitive resin.

4. The method of claim 3 , wherein, during the developing, the masking coating develops and disappears.

5. The method of claim 1 , wherein the exposing is performed after the separating.

6. The method of claim 1 , wherein the exposing is performed before the separating and wherein the mold is made of a transparent material.

Assignees

• Pauliac Sebastien
• Landis Stefan
• Commissariat Energie Atomique

Inventors

• Pauliac Sebastien
• Landis Stefan

Classifications

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• G03F7/0002 Primary

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• Y10T428/24802

  Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] · CPC title