ESD protection thyristor adapted to electro-optical devices

Patent metadata

Field	Value
Publication number	US-9523815-B2
Application number	US-201514638292-A
Country	US
Kind code	B2
Filing date	Mar 4, 2015
Priority date	Mar 31, 2014
Publication date	Dec 20, 2016
Grant date	Dec 20, 2016

Abstract

A thyristor may include a first optical waveguide segment in a semiconductor material, having first and second complementary longitudinal parts of opposite conductivity types configured to form a longitudinal bipolar junction therebetween. The thyristor may further include a second optical waveguide segment in a semiconductor material, adjacent the first waveguide segment and having first and second complementary longitudinal parts of opposite conductivity types configured to form a longitudinal bipolar junction therebetween. A transverse bipolar junction may be between the second longitudinal portions of the first and second waveguide segments. An electrical insulator may separate each of the first longitudinal portions from the waveguide segment adjacent thereto.

First claim

What is claimed is:

1. A thyristor comprising:
a first optical waveguide segment in a semiconductor material, and having first and second complementary longitudinal parts of opposite conductivity types defining a longitudinal bipolar junction therebetween;
a second optical waveguide segment in a semiconductor material adjacent the first waveguide segment and having first and second complementary longitudinal parts of opposite conductivity types defining a longitudinal bipolar junction therebetween, the respective second longitudinal parts of said first and second optical waveguide segments defining a transverse bipolar junction therebetween; and
an electrical insulator configured to separate each of the first longitudinal parts from an adjacent one of said first and second optical waveguide segments.

2. The thyristor according to claim 1 , further comprising:
first and second terminals respectively associated with the first longitudinal parts of said first and second optical waveguide segments; and
first and second gates respectively associated with the second longitudinal parts of each of said first and second optical waveguide segments.

3. The thyristor according to claim 1 , wherein said electrical insulator is configured to extend into the second longitudinal parts of each of said first and second optical waveguide segments; and wherein the second longitudinal parts of each of said first and second optical waveguide segments are coupled by a conductive portion having a width smaller than a width of each of the second longitudinal parts.

4. The thyristor according to claim 3 , wherein a holding voltage of the thyristor is based upon the width and a length of the conductive portion.

5. The thyristor according to claim 3 , wherein said insulator comprises a plurality of transverse strips of alternating conductivity types to define a plurality of opposing bipolar junctions.

6. The thyristor according to claim 2 , further comprising, for each of said first and second gates, a respective terminal located on a corresponding second longitudinal part of said first and second optical waveguide segments.

7. The thyristor according to claim 1 , wherein the second longitudinal parts of said first and second optical waveguide segments are wider than the first longitudinal parts; and wherein the first longitudinal parts of said first and second optical waveguide segments are on either side of a longitudinal axis.

8. An electronic device comprising:
a first optical waveguide segment having first and second complementary longitudinal portions of opposite conductivity types defining a longitudinal bipolar junction therebetween;
a second optical waveguide segment adjacent said first waveguide segment and having first and second complementary longitudinal portions of opposite conductivity types defining a longitudinal bipolar junction therebetween, the respective second longitudinal portions of said first and second optical waveguide segments defining a transverse bipolar junction therebetween; and
an electrical insulator between the first longitudinal portions of said first and second optical waveguide segments.

9. The electronic device according to claim 8 , further comprising:
first and second terminals respectively associated with the first longitudinal portions of said first and second optical waveguide segments; and
first and second gates respectively associated with the second longitudinal portions of each of said first and second optical waveguide segments.

10. The electronic device according to claim 8 , wherein said electrical insulator is configured to extend into the second longitudinal portions of each of said first and second optical waveguide segments; and
wherein the second longitudinal portions of each of said first and second optical waveguide segments are coupled by a conductive portion having a width smaller than a width of each of the second longitudinal portions.

11. The electronic device according to claim 8 , wherein said insulator comprises a plurality of transverse strips of alternating conductivity types to define a plurality of opposing bipolar junctions.

12. The electronic device according to claim 9 , further comprising, for each of said first and second gates, a respective terminal located on a corresponding second longitudinal portion of said first and second optical waveguide segments.

13. The electronic device according to claim 8 , wherein the second longitudinal portions of said first and second optical waveguide segments are wider than the first longitudinal parts.

14. A method of making an electronic device comprising:
forming a first optical waveguide segment in a semiconductor material, and to have first and second complementary longitudinal parts of opposite conductivity types defining a longitudinal bipolar junction therebetween;
forming a second optical waveguide segment in a semiconductor material adjacent the first waveguide segment and to have first and second complementary longitudinal parts of opposite conductivity types to define a longitudinal bipolar junction therebetween, the second longitudinal part of the first and second optical waveguide segments being formed to define a transverse bipolar junction therebetween; and
forming an electrical insulator to separate each of the first longitudinal parts from an adjacent one of the first and second optical waveguide segments.

15. The method according to claim 14 , further comprising:
forming first and second terminals respectively associated with the first longitudinal parts of the first and second optical waveguide segments; and
forming first and second gates respectively associated with the second longitudinal parts of each of the first and second optical waveguide segments.

16. The method according to claim 14 , wherein the electrical insulator is formed to extend into the second longitudinal parts of each of the first and second optical waveguide segments; and wherein the second longitudinal parts of each of the first and second optical waveguide segments are coupled by a conductive portion having a width smaller than a width of each of the second longitudinal parts.

17. The method according to claim 16 , wherein forming the insulator comprises forming a plurality of transverse strips of alternating conductivity types to define a plurality of opposing bipolar junctions.

18. The method according to claim 15 , further comprising, for each of the first and second gates, forming a respective terminal located on a corresponding second longitudinal part of the first and second optical waveguide segments.

19. The method according to claim 14 , wherein the second longitudinal parts of the first and second optical waveguide segments are formed to be wider than the first longitudinal parts; and wherein the first longitudinal parts of the first and second optical waveguide segments are formed on either side of a longitudinal axis.

Assignees

• St Microelectronics Sa
• St Microelectronics Crolles 2 Sas

Inventors

• Manouvrier Jean-Robert
• Batail Estelle

Classifications

• H10D89/60

  Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] · CPC title

• H10D18/00 Primary

  Thyristors · CPC title

• G02B6/4295

  coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors · CPC title

• G02B6/4275

  Protection against electrostatic discharge [ESD] · CPC title

• H01L27/0248

  Electricity · mapped topic