Measuring system for measuring an imaging quality of an EUV lens
US-9494483-B2 · Nov 15, 2016 · US
US9523625B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9523625-B2 |
| Application number | US-201314433688-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 12, 2013 |
| Priority date | Dec 13, 2012 |
| Publication date | Dec 20, 2016 |
| Grant date | Dec 20, 2016 |
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A method for monitoring includes providing a device ( 64 ) including a first part ( 46 ) and a second part ( 72 ) and a movable joint ( 70 ) connecting the first part to the second part. An electrical characteristic of a conductive path ( 80 ) crossing the movable joint is measured, and a remedial action is initiated in response to detecting a change of the electrical characteristic.
Opening claim text (preview).
The invention claimed is: 1. A method for monitoring, comprising: providing a device comprising a mirror and a gimbal and rotatable hinges between the mirror and the gimbal and having on a surface of the mirror a reflective metal coating configured to reflect and scan a beam of light that is incident on the mirror; measuring an electrical characteristic of a conductive path crossing the rotatable hinges and including the reflective metal coating on the surface of the mirror, wherein the metal coating serves as a part of the conductive path; and initiating a remedial action in response to detecting a change of the electrical characteristic. 2. The method according to claim 1 , wherein providing the device comprises applying photolithographic processing to etch the mirror, the gimbal and the rotatable hinges from a substrate and to deposit a metal trace so as to form the conductive path, including the reflective metal coating on the surface of the mirror, on the substrate. 3. The method according to claim 2 , wherein the device comprises a micro-electro-mechanical system (MEMS), and wherein the substrate comprises a semiconductor wafer. 4. The method according to claim 1 , wherein measuring the electrical characteristic comprises measuring an electrical continuity of the conductive path, and wherein detecting the change comprises detecting a loss of the continuity in response to a failure of the rotatable hinges. 5. The method according to claim 1 , wherein the rotatable hinges between the mirror and the gimbal comprise first hinges, and wherein the device comprises a base and second rotatable hinges between the gimbal and the base, and wherein the conductive path crosses both the first and the second hinges. 6. The method according to claim 1 , wherein providing the device comprises directing the beam of light toward the mirror so as to scan the beam of light reflected from the mirror as the mirror rotates on the rotatable hinges, and wherein initiating the remedial action comprises interrupting the beam of the light. 7. The method according to claim 1 , wherein initiating the remedial action comprises issuing an indication of a failure of the device. 8. A mechanical device, comprising: a mirror and a gimbal and rotatable hinges between the mirror and the gimbal; a conductive path crossing the rotatable hinges and including in the conductive path a reflective metal coating formed on a surface of the mirror and configured to reflect and scan a beam of light that is incident on the mirror, wherein the metal coating serves as a part of the conductive path; and a control circuit, configured to measure an electrical characteristic of the conductive path and to initiate a remedial action in response to detecting a change of the electrical characteristic. 9. The device according to claim 8 , wherein the mirror, the gimbal and the rotatable hinges are etched from a substrate, and wherein the conductive path comprises a metal trace, including the reflective metal coating on the surface of the mirror, that is deposited on the substrate. 10. The device according to claim 9 , wherein the mirror, the gimbal and the rotatable hinges constitute a micro-electro-mechanical system (MEMS), and wherein the substrate comprises a semiconductor wafer. 11. The device according to claim 8 , wherein the electrical characteristic measured by the control circuit comprises an electrical continuity of the conductive path, and wherein the detected change comprises a loss of the continuity in response to a failure of the rotatable hinges. 12. The device according to claim 8 , wherein the rotatable hinges between the mirror and the gimbal comprise first hinges, and wherein the device comprises a base and second rotatable hinges between the gimbal and the base, and wherein the conductive path crosses both the first and the second hinges. 13. The device according to claim 8 , and comprising a light transmitter, which is configured to direct the beam of light toward the mirror so as to scan the beam of light reflected from the mirror as the mirror rotates on the rotatable hinges, and wherein the remedial action comprises interrupting the beam of the light. 14. The device according to claim 8 , wherein the remedial action comprises issuing an indication of a failure of the device. 15. The method according to claim 3 , and comprising forming an insulating layer between the substrate and the metal trace. 16. The device according to claim 10 , and comprising an insulating layer between the substrate and the metal trace.
Etching of wafers, substrates or parts of devices · CPC title
Rotation out of a plane parallel to the substrate · CPC title
Characterising MEMS devices, e.g. measuring and identifying electrical or mechanical constants · CPC title
the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD (G02B26/0825 takes precedence; micromechanical devices in general B81B) · CPC title
Micromirrors, not used as optical switches · CPC title
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