Methods and apparatus for forming semiconductor

US9523158B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9523158-B2
Application numberUS-201514606884-A
CountryUS
Kind codeB2
Filing dateJan 27, 2015
Priority dateFeb 7, 2014
Publication dateDec 20, 2016
Grant dateDec 20, 2016

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  1. Title

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  2. Abstract

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Method and apparatus for forming free-standing, substantially monocrystalline semiconductor substrates is described. A template substrate is subjected to a process of forming a porous layer on each major surface of the template substrate. The porous layer is smoothed, and then an epitaxial layer is formed on each porous layer. Mechanical energy is used to separate the epitaxial layers from the template substrate, which is recycled by removing any remaining porous and epitaxial material.

First claim

Opening claim text (preview).

What is claimed is: 1. An apparatus for separating layers of a substrate, comprising: a chamber; a susceptor with a plurality of substrate locations disposed in the chamber and defining a substrate processing plane; and a source of mechanical energy facing the substrate processing plane, wherein each of the substrate locations comprises an edge gripper, and wherein the source of mechanical energy is an acoustic transducer comprising a pressure wave emitter and a pressure wave detector. 2. The apparatus of claim 1 , wherein the susceptor is supported from a side wall of the chamber. 3. The apparatus of claim 1 , further comprising a controller coupled to the acoustic transducer. 4. The apparatus of claim 3 , wherein the chamber comprises a fluid inlet and a fluid outlet. 5. An apparatus for separating layers of a substrate, comprising: a chamber; a susceptor with a plurality of substrate locations disposed in the chamber and defining a substrate processing plane; and a source of mechanical energy facing the substrate processing plane, wherein each of the substrate locations comprises an edge gripper, and wherein the source of mechanical energy is a pair of acoustic transducers disposed on opposite sides of the susceptor, and each acoustic transducer comprises a pressure wave emitter and a pressure wave detector. 6. An apparatus for separating layers of a substrate, comprising: a chamber; a substrate support defining a substrate processing plane; a first contact actuator having a first substrate contact surface facing the substrate processing plane; a second contact actuator having a second substrate contact surface facing the substrate processing plane and disposed opposite the substrate processing plane from the first contact actuator, wherein the first and the second substrate contact surfaces are vacuum applicators, each of which is a porous ceramic member; a first mechanical stress source coupled to the first contact actuator; and a second mechanical stress source coupled to the second contact actuator, wherein each mechanical stress source is a vacuum pump, and further comprising a controller for cycling each vacuum pump at a frequency between about 0.5 Hz and about 100 Hz. 7. An apparatus for separating layers of a substrate, comprising: a chamber; a substrate support defining a substrate processing plane; a first contact actuator having a first substrate contact surface facing the substrate processing plane; a second contact actuator having a second substrate contact surface facing the substrate processing plane and disposed opposite the substrate processing plane from the first contact actuator, wherein the first and the second substrate contact surfaces are vacuum applicators, each of which is a porous ceramic member; a first mechanical stress source coupled to the first contact actuator; and a second mechanical stress source coupled to the second contact actuator, wherein each mechanical stress source is a piezoelectric actuator. 8. The apparatus of claim 7 , further comprising a vacuum source fluidly coupled to each vacuum applicator.

Assignees

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Classifications

  • characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

  • characterised by edge clamping, e.g. clamping ring · CPC title

  • used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate · CPC title

  • the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support · CPC title

  • characterised by substrate supports · CPC title

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What does patent US9523158B2 cover?
Method and apparatus for forming free-standing, substantially monocrystalline semiconductor substrates is described. A template substrate is subjected to a process of forming a porous layer on each major surface of the template substrate. The porous layer is smoothed, and then an epitaxial layer is formed on each porous layer. Mechanical energy is used to separate the epitaxial layers from the …
Who is the assignee on this patent?
Applied Materials Inc
What technology area does this patent fall under?
Primary CPC classification C30B33/00. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Dec 20 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).