Tunable capacitor integrated on one semiconductor die or on one module

US9520854B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9520854-B2
Application numberUS-201314013235-A
CountryUS
Kind codeB2
Filing dateAug 29, 2013
Priority dateApr 3, 2012
Publication dateDec 13, 2016
Grant dateDec 13, 2016

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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Disclosed is a tunable capacitor. The tunable capacitor according to a first embodiment of the present invention includes: a first capacitor; and a switching transistor which switches on/off the connection of the first capacitor between the first terminal and the second terminal, wherein an on/off operation of the switching transistor is performed by a high signal H and a low signal L. The tunable capacitor according to a second embodiment of the present invention includes: a first capacitor; and a switching transistor which switches on/off the connection of the first capacitor between the first terminal and the second terminal, wherein an on/off operation of the switching transistor is performed by a high signal H and a low signal L, and wherein the tunable capacitor is integrated on one semiconductor die or on one module.

First claim

Opening claim text (preview).

What is claimed is: 1. A tunable capacitor comprising: a first capacitor; a switching transistor which switches on/off a connection of the first capacitor between a first terminal and a second terminal; and a converter configured to convert a signal applied to a gate terminal G of the switching transistor and apply the converted signal to a drain terminal D and a source terminal S of the switching transistor, wherein an on/off operation of the switching transistor is performed by a high signal H and a low signal L. 2. The tunable capacitor of claim 1 , wherein when the switching transistor is in an on-state, a high signal H is applied to the gate terminal G, and a low signal L is applied to a body terminal B, the drain terminal D and the source terminal S, and wherein when the switching transistor is in an off-state, the low signal L is applied to the gate terminal G and the body terminal B, and the high signal H is applied to the drain terminal D and the source terminal S. 3. The tunable capacitor of claim 1 , wherein the switching transistor is a stacked transistor formed by connecting in series a plurality of transistors. 4. The tunable capacitor of claim 1 , wherein the gate terminal G and a body terminal B of the switching transistor are connected in series to a resistance respectively. 5. The tunable capacitor of claim 1 , wherein the first capacitor is formed by connecting in series or in parallel a plurality of capacitors. 6. A tunable capacitor array comprising a plurality of the tunable capacitors according to claim 1 , wherein the plurality of the tunable capacitors are connected in parallel to each other. 7. A tunable capacitor array comprising a plurality of the tunable capacitors according to claim 1 , wherein the plurality of the tunable capacitors are connected in parallel to each other. 8. The tunable capacitor array of claim 6 , wherein an equivalent capacitance of the plurality of the tunable capacitors is 2 m-1 ×C1 (here, m is a natural number less than or equal to n), wherein channel width-to-length ratios W/L of the switching transistors of the plurality of the tunable capacitors are 2 m-1 ×W1 (here, m is a natural number less than or equal to n) respectively, and wherein the n is a number of the tunable capacitors, wherein the C1 is an equivalent capacitance of a particular tunable capacitor, and wherein the W1 is a channel width-to-length ratio W/L of the switching transistor. 9. The tunable capacitor array of claim 6 , further comprising a fixed capacitor which is connected in parallel to a plurality of the tunable capacitors. 10. The tunable capacitor array of claim 8 , further comprising a fixed capacitor which is connected in parallel to a plurality of the tunable capacitors. 11. The tunable capacitor array of claim 6 , further comprising a controller which receives a digital control signal and controls on/off of the switching transistor. 12. The tunable capacitor array of claim 8 , further comprising a controller which receives a digital control signal and controls on/off of the switching transistor. 13. A tunable capacitor comprising: a first capacitor; a switching transistor which switches on/off a connection of the first capacitor between a first terminal and a second terminal; and a converter configured to convert a signal applied to a gate terminal G of the switching transistor and apply the converted signal to a drain terminal D and a source terminal S of the switching transistor, wherein an on/off operation of the switching transistor is performed by a high signal H and a low signal L, and wherein the tunable capacitor is integrated on one semiconductor die or on one module. 14. The tunable capacitor of claim 13 , wherein when the switching transistor is in an on-state, a high signal H is applied to the gate terminal G, and a low signal L is applied to a body terminal B, the drain terminal D and the source terminal S, and wherein when the switching transistor is in an off-state, the low signal L is applied to the gate terminal G and the body terminal B, and the high signal H is applied to the drain terminal D and the source terminal S. 15. The tunable capacitor of claim 13 , wherein the switching transistor is a stacked transistor formed by connecting in series a plurality of transistors. 16. The tunable capacitor of claim 13 , wherein the gate terminal G and a body terminal B of the switching transistor are connected in series to a resistance respectively. 17. The tunable capacitor of claim 13 , wherein the first capacitor is formed by connecting in series or in parallel a plurality of capacitors. 18. A tunable capacitor array comprising a plurality of the tunable capacitors according to claim 13 , wherein the plurality of the tunable capacitors are connected in parallel to each other. 19. A tunable capacitor array comprising a plurality of the tunable capacitors according to claim 13 , wherein the plurality of the tunable capacitors are connected in parallel to each other. 20. The tunable capacitor array of claim 18 , wherein an equivalent capacitance of the plurality of the tunable capacitors is 2 m-1 ×C1 (here, m is a natural number less than or equal to n), wherein channel width-to-length ratios W/L of the switching transistors of the plurality of the tunable capacitors are 2 m-1 ×W1 (here, m is a natural number less than or equal to n) respectively, and wherein the n is a number of the tunable capacitors, wherein the C1 is an equivalent capacitance of a particular tunable capacitor, and wherein the W1 is a channel width-to-length ratio W/L of the switching transistor. 21. The tunable capacitor array of claim 18 , further comprising a fixed capacitor which is connected in parallel to a plurality of the tunable capacitors. 22. The tunable capacitor array of claim 20 , further comprising a fixed capacitor which is connected in parallel to a plurality of the tunable capacitors. 23. The tunable capacitor array of claim 18 , further comprising a controller which receives a digital control signal and controls on/off of the switching transistor. 24. The tunable capacitor array of claim 20 , further comprising a controller which receives a digital control signal and controls on/off of the switching transistor.

Assignees

Inventors

Classifications

  • Arrangements for impedance matching · CPC title

  • Capacitive arrangements (H10W44/20 takes precedence) · CPC title

  • at high-frequency [HF] or radio frequency [RF] · CPC title

  • H03H7/38Primary

    Impedance-matching networks · CPC title

  • Impedance matching networks · CPC title

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What does patent US9520854B2 cover?
Disclosed is a tunable capacitor. The tunable capacitor according to a first embodiment of the present invention includes: a first capacitor; and a switching transistor which switches on/off the connection of the first capacitor between the first terminal and the second terminal, wherein an on/off operation of the switching transistor is performed by a high signal H and a low signal L. The tuna…
Who is the assignee on this patent?
Hideep Inc, Hideep Inc
What technology area does this patent fall under?
Primary CPC classification H03H7/38. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 13 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).