Capacitive micromachined ultrasonic transducer (CMUT) device with through-substrate via (TSV)

Patent metadata

Field	Value
Publication number	US-9520811-B2
Application number	US-201313779376-A
Country	US
Kind code	B2
Filing date	Feb 27, 2013
Priority date	Feb 27, 2013
Publication date	Dec 13, 2016
Grant date	Dec 13, 2016

Abstract

A Capacitive Micromachined Ultrasonic Transducer (CMUT) device includes at least one CMUT cell including a first substrate having a top side including a patterned dielectric layer thereon including a thick and a thin dielectric region. A membrane layer is bonded on the thick dielectric region and over the thin dielectric region to provide a movable membrane over a micro-electro-mechanical system (MEMS) cavity. A through-substrate via (TSV) includes a dielectric liner which extends from a bottom side of the first substrate to a top surface of the membrane layer. A top side metal layer includes a first portion over the TSV, over the movable membrane, and coupling the TSV to the movable membrane. A patterned metal layer is on the bottom side surface of the first substrate including a first patterned layer portion contacting the bottom side of the first substrate lateral to the TSV.

First claim

The invention claimed is:

1. A Capacitive Micromachined Ultrasonic Transducer (CMUT) device, comprising:
a CMUT cell including:
a substrate including a top side and a bottom side;
a dielectric layer over the top side of the substrate, the dielectric layer having a first region and a second region laterally surrounded by the first region and thinner than the first region, the first and second regions defining a cavity;
a membrane layer bonded directly on the first region of the dielectric layer and enclosing the cavity over the second region of the dielectric layer, the membrane layer including a movable membrane movable within the cavity;
a through-substrate via (TSV) penetrating the substrate, the dielectric layer, and the membrane layer, and the TSV positioned laterally away from the movable membrane, the TSV including a conductive filler extending from the bottom side of the substrate to be coplanar with the membrane layer; and
a metal layer contacting the conductive filler above the top side of the substrate, the metal layer extending laterally along the membrane layer and contacting the movable membrane.

2. The CMUT device of claim 1 , further comprising:
a dielectric passivation layer above the metal layer.

3. The CMUT device of claim 1 , further comprising:
a second CMUT cell;
a second metal layer contacting the conductive filler of the first CMUT cell below the bottom side of the substrate to couple the first CMUT cell to the second CMUT cell.

4. The CMUT device of claim 1 , wherein the membrane layer comprises a single crystal silicon material.

5. The CMUT device of claim 1 , wherein the conductive filler comprises copper and protruding from the bottom side of the substrate.

6. The CMUT device of claim 1 , wherein the substrate has a resistivity less than or equal to 0.1 Ω-cm.

7. The CMUT device of claim 1 , wherein said membrane layer is vacuum fusion bonded to the dielectric region.

Assignees

• Texas Instruments Inc

Inventors

• Johnson Peter B
• Wygant Ira Oaktree

Classifications

• A61B8/4483

  characterised by features of the ultrasound transducer · CPC title

• B06B1/0292 Primary

  Electrostatic transducers, e.g. electret-type · CPC title

• H02N1/002

  Electrostatic motors · CPC title

• H02N1/006 Primary

  of the gap-closing type (H02N1/004 takes precedence) · CPC title

• B06B2201/76

  Medical, dental · CPC title