Semiconductor module, semiconductor device having semiconductor module, and method of manufacturing semiconductor module

Patent metadata

Field	Value
Publication number	US-9520345-B2
Application number	US-201514956474-A
Country	US
Kind code	B2
Filing date	Dec 2, 2015
Priority date	Aug 10, 2011
Publication date	Dec 13, 2016
Grant date	Dec 13, 2016

Abstract

A semiconductor module is configured such that heat radiation substrates are connected to lead frames and semiconductor chips are directly connected to the lead frames, so that the semiconductor chips are not connected to the lead frames through conductive portions of the heat radiation substrates. Therefore, the conductive portions can have a solid shape without being divided. As such, an occurrence of curving of the heat radiation substrates is suppressed when a temperature is reduced from a high temperature to a room temperature after resin-sealing at the high temperature or the like. Therefore, connection between the semiconductor chip and the lead frames and connection between the lead frames and the heat radiation substrates enhance.

First claim

The invention claimed is:

1. A semiconductor module comprising:
a semiconductor chip having a front surface and a rear surface, the semiconductor chip being provided with a vertical-type semiconductor power element, the semiconductor chip having a signal line electrode and a front surface electrode on the front surface, and a rear surface electrode on the rear surface;
a first lead frame being connected to the rear surface electrode of the semiconductor chip, and including a first terminal;
a second lead frame including a signal line terminal connected to the signal line electrode of the semiconductor chip, and a plate portion that is connected to the front surface electrode of the semiconductor chip, and from which a second terminal extends;
a first heat radiation substrate being joined to a surface of the first lead frame opposite to a surface on which the semiconductor chip is disposed;
a second heat radiation substrate being joined to a surface of the second lead frame opposite to a surface on which the semiconductor chip is disposed; and
a resin part, wherein the semiconductor chip, the first lead frame the second lead frame, the first heat radiation substrate and the second heat radiation substrate are sealed by the resin part such that the first terminal and the second terminal are exposed from the resin part and a surface of the first heat radiation substrate opposite to a surface joined to the first lead frame and a surface of the second heat radiation substrate opposite to a surface joined to the second lead frame are exposed from the resin part, wherein
each of the first heat radiation substrate and the second heat radiation substrate includes a first conductive portion, a second conductive portion and an insulated substrate, the first conductive portion providing the surface joined to corresponding one of the first lead frame and the second lead frame, the second conductive portion providing the surface exposed from the resin part, the insulated substrate being disposed between the first conductive portion and the second conductive portion,
each of the first conductive portion and the second conductive portion has a solid shape without being divided,
the first conductive portion and the second conductive portion have a symmetric shape,
the first lead frame and the first heat radiation substrate are disposed on one side of the semiconductor chip to provide a component structure,
the second lead frame and the second heat radiation substrate are disposed on the other side of the semiconductor chip to provide a component structure,
the component structure of the one side of the semiconductor chip and the component structure of the other side of the semiconductor chip are symmetric with respect to the semiconductor chip, and
the signal line terminal and the signal line electrode are joined to each other through a joining material having a bump.

2. The semiconductor module according to claim 1 , wherein
an end of the signal line terminal adjacent to the plate portion has a thickness smaller than that of the plate portion.

3. The semiconductor module according to claim 1 ,
wherein
the signal line terminal is formed with a through hole at a position joined through the joining material the through hole passing from a front surface to a rear surface of the signal line terminal, and
the joining material is entered in the through hole.

4. The semiconductor module according to claim 3 , wherein
a diameter of the through hole is minimum at a middle position with respect to a depth direction of the through hole and gradually increases toward the front surface and the rear surface of the signal line terminal.

Assignees

• Denso Corp

Inventors

• Ishino Hiroshi
• Watanabe Tomokazu

Classifications

• H10W90/763

  between laterally-adjacent chips · CPC title

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/944

  Dispositions of multiple bond pads · CPC title