Semiconductor module for electric power

Patent metadata

Field	Value
Publication number	US-9520344-B2
Application number	US-201314401556-A
Country	US
Kind code	B2
Filing date	May 7, 2013
Priority date	May 16, 2012
Publication date	Dec 13, 2016
Grant date	Dec 13, 2016

Abstract

Included are: the third frame which is electrically connected to the first intermediate frame and is arranged above the first frame; the fourth frame which is electrically connected to the second intermediate frame and is arranged above the second frame; the electric source terminal part which is provided on an extension of the first frame; the ground terminal part which is provided on an extension of the fourth frame; and the output terminal part which is provided on an extension to which the second frame and the third frame are electrically joined, wherein the third frame and the fourth frame are arranged in parallel with each other, and the electric source terminal part, the ground terminal part and the output terminal part are arranged in a manner such that induced electric voltages, which are generated in the third frame and the fourth frame, become in reverse directions with each other.

First claim

The invention claimed is:

1. A semiconductor module for electric power, comprising:
a first frame where plural first transistors and first diodes are arranged;
a second frame where plural second transistors and second diodes are arranged;
a first intermediate frame which is adjacent to the first frame;
a second intermediate frame which is adjacent to the second frame;
a third frame which is electrically connected to the first intermediate frame, and is arranged above the first frame;
a fourth frame which is electrically connected to the second intermediate frame, and is arranged above the second frame;
an electric source terminal which is provided on an extension of the first frame;
a ground terminal which is provided on an extension of the fourth frame; and
an output terminal which is provided on an extension to which the second frame and the third frame are electrically joined, wherein
a drain electrode of the first transistor is connected to the first frame,
a source electrode of the first transistor and an anode electrode of the first diode are connected to the first intermediate frame with first connecting lines of metal,
a drain electrode of the second transistor is connected to the second frame,
a source electrode of the second transistor and an anode electrode of the second diode are connected to the second intermediate frame with second connecting lines of metal,
in neighborhoods of the first transistor and the second transistor, gate terminals and source terminals are arranged,
the first frame, the second frame, the first intermediate frame, the second intermediate frame, the third frame, and the fourth frame are all arranged on a heat radiating plate via an insulator which is configured with a resin-system material, and at least a part of each of the first frame, the second frame, the first intermediate frame, the second intermediate frame, the third frame, and the fourth frame is covered with a molding resin, and
the third frame and the fourth frame are arranged in parallel with each other, and the electric source terminal, the ground terminal and the output terminal are arranged in a manner such that induced electric voltages, which are generated in the third frame and the fourth frame, become in reverse directions with each other.

2. A semiconductor module for electric power according to claim 1 , wherein
connected to the first intermediate frame is a foot of the third frame,
connected to the second intermediate frame is a foot of the fourth frame,
the foot of the third frame is arranged between the plural first connecting lines, and
the foot of the fourth frame is arranged between the plural second connecting lines.

3. A semiconductor module for electric power according to claim 1 , wherein
the third frame is arranged so as to be placed above the first transistors and the first diodes, and
the fourth frame is arranged so as to be placed above the second transistors and the second diodes.

4. A semiconductor module for electric power according to claim 1 , wherein
a gate electrode of the first transistor is arranged at a side opposite to the first intermediate frame, and
a gate electrode of the second transistor is arranged at a side opposite to the second intermediate frame.

5. A semiconductor module for electric power, comprising:
a first metal electric-conductor-island where plural first transistors and first diodes are arranged;
a second metal electric-conductor-island where plural second transistors and second diodes are arranged;
a first intermediate metal electric-conductor-island which is adjacent to the first metal electric-conductor-island;
a second intermediate metal electric-conductor-island which is adjacent to the second metal electric-conductor-island;
a fifth frame which is electrically connected to the first intermediate metal electric-conductor-island, and is arranged above the first metal electric-conductor-island;
a sixth frame which is electrically connected to the second intermediate metal electric-conductor-island, and is arranged above the second metal electric-conductor-island;
an electric source terminal which is provided on an extension of the first metal electric-conductor-island;
a ground terminal which is provided on an extension of the sixth frame; and
an output terminal which is connected to the second metal electric-conductor-island, where the second metal electric-conductor-island and the fifth frame electrically join, wherein
a drain electrode of the first transistor is connected to the first metal electric-conductor-island,
a source electrode of the first transistor and an anode electrode of the first diode are connected to the first intermediate metal electric-conductor-island with first connecting lines of metal,
a drain electrode of the second transistor is connected to the second metal electric-conductor-island,
a source electrode of the second transistor and an anode electrode of the second diode are connected to the second intermediate metal electric-conductor-island with second connecting lines of metal,
in neighborhoods of the first transistor and the second transistor, gate terminals and source terminals are arranged,
the first metal electric-conductor-island, the second metal electric-conductor-island, the first intermediate metal electric-conductor-island, the second intermediate metal electric-conductor-island, the fifth frame, and the sixth frame are all arranged on a heat radiating plate via an insulator which is configured with a ceramic material, and at least a part of each of the first metal electric-conductor-island, the second metal electric-conductor-island, the first intermediate metal electric-conductor-island, the second intermediate metal electric-conductor-island, the fifth frame, and the sixth frame is covered with a gel-like resin, and
the fifth frame and the sixth frame are arranged in parallel with each other, and the electric source terminal, the ground terminal and the output terminal are arranged in a manner such that induced electric voltages, which are generated in the fifth frame and the sixth frame, become in reverse directions with each other.

6. A semiconductor module for electric power according to claim 5 , wherein
connected to the first intermediate metal electric-conductor-island is a foot of the fifth frame,
connected to the second intermediate metal electric-conductor-island is a foot of the sixth frame,
the foot of the fifth frame is arranged between the plural first connecting lines, and
the foot of the sixth frame is arranged between the plural second connecting lines.

7. A semiconductor module for electric power according to claim 5 , wherein
the fifth frame is arranged so as to be placed above the first transistors and the first diodes, and
the sixth frame is arranged so as to be placed above the second transistors and the second diodes.

8. A semiconductor module for electric power according to claim 1 , wherein
the first connecting lines and the second connecting lines are configured with ribbons.

9. A semiconductor module for electric power according to claim 1 , wherein
the first connecting lines and the second connecting lines are configured with clips.

10. A semiconductor module for electric power according to claim 5 , wherein
a gate electrode of the first transistor is arranged at a side opposite to the first intermediate metal electric-conductor-island, and
a gate electrode of the second transistor is arranged at a side opposite to the second intermediate metal electric-conductor-island.

11. A semiconductor module for electric power according to claim 5 , wherein
the first connecting lines and the second connecting l

Assignees

• Panasonic Ip Man Co Ltd
• Panasonic Ip Man Co Ltd

Inventors

• Yamashita Kenya

Classifications

• H10W90/766

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/752

  between stacked chips · CPC title

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/701

  characterised by the relative positions of pads or connectors relative to package parts · CPC title