Power semiconductor arrangement and method of producing a power semiconductor arrangement

Patent metadata

Field	Value
Publication number	US-9520305-B2
Application number	US-201414503303-A
Country	US
Kind code	B2
Filing date	Sep 30, 2014
Priority date	Sep 30, 2013
Publication date	Dec 13, 2016
Grant date	Dec 13, 2016

Abstract

A power semiconductor device comprising a power semiconductor module and a heat sink; and a method for its manufacture. The module has a cooling plate, with an opening delimited by a lateral first surface thereof extending circumferentially around the opening. The cooling plate is arranged in the opening and has a lateral first surface which extends circumferentially around the cooling plate. The two first surfaces are at a respective angle of less than 90° with respect to a main surface of the cooling plate facing the power semiconductor components. The two first surfaces are pressed together, extending circumferentially along the first surface of the cooling plate and extending circumferentially along the first surface of the heat sink. The inventive power semiconductor device has good heat conduction from the power semiconductor components to the heat sink through which a liquid can flow, and which is reliably leaktight over the long term.

First claim

What is claimed is:

1. A power semiconductor device comprising:
a power semiconductor module having
electrically conductive conductor tracks with at least one power semiconductor component arranged thereon;
a cooling plate, said cooling plate having a main surface facing said at least one power semiconductor component and a lateral first surface which extends circumferentially around said cooling plate and is at an angle (α) of less than about 90° with respect to said main surface of said cooling plate; and
an electrically non-conductive insulation layer arranged between said conductor tracks and said cooling plate; and

a heat sink through which a liquid can flow, said heat sink having an opening therein and a lateral first surface which delimits said opening and extends circumferentially around said opening;
wherein said first surface of said heat sink is at an angle (β) of less than about 90° with respect to said main surface of said cooling plate;
wherein said cooling plate is arranged in said opening;
wherein said lateral first surface of said cooling plate and said lateral first surface of said heat sink are arranged in a manner pressed against one another and extend circumferentially along said lateral first surface of said cooling plate and extend circumferentially along said lateral first surface of said heat sink;
wherein said heat sink has a lateral second surface which extends circumferentially around said opening;
wherein said opening is further delimited by said lateral second surface of said heat sink;
wherein said lateral second surface of said heat sink forms an inner surface of a first groove which extends circumferentially around said opening, and extends radially inwardly towards said cooling plate;
wherein said cooling plate has an edge region with a protuberance, said edge region extending circumferentially around said cooling plate, and extending outwardly towards said lateral second surface, and said protuberance being disposed in said first groove.

2. A power semiconductor device comprising:
a power semiconductor module having
electrically conductive conductor tracks with at least one power semiconductor component arranged thereon;
a cooling plate, said cooling plate having a main surface facing said at least one power semiconductor component and a lateral first surface which extends circumferentially around said cooling plate and is at an angle (α) of less than about 90° with respect to said main surface of said cooling plate; and
an electrically non-conductive insulation layer arranged between said conductor tracks and said cooling plate; and

a heat sink through which a liquid can flow, said heat sink having an opening therein and a lateral first surface which delimits said opening and extends circumferentially around said opening;
wherein said first surface of said heat sink is at an angle (β) of less than about 90° with respect to said main surface of said cooling plate;
wherein said angle (β) is approximately equal to said angle (α);
wherein said cooling plate is arranged in said opening;
wherein said lateral first surface of said cooling plate and said lateral first surface of said heat sink are arranged in a manner pressed against one another and extend circumferentially along said lateral first surface of said cooling plate and extend circumferentially along said lateral first surface of said heat sink;
wherein said heat sink has a lateral second surface which extends circumferentially around said opening;
wherein said opening is further delimited by said lateral second surface of said heat sink ;
wherein said lateral second surface of said heat sink forms an inner surface of a first groove which extends circumferentially around said opening, and extends radially inwardly towards said cooling plate;
wherein said cooling plate has an edge region with a protuberance, said edge region extending circumferentially around said cooling plate, and extending outwardly towards said lateral second surface, and said protuberance being disposed in said first groove.

3. A power semiconductor device comprising:
a power semiconductor module having
electrically conductive conductor tracks with at least one power semiconductor component arranged thereon;
a cooling plate, said cooling plate having a main surface facing said at least one power semiconductor component and a lateral first surface which extends circumferentially around said cooling plate and is at an angle (α) of between about 89.5° and about 85° with respect to said main surface of said cooling plate; and
an electrically non-conductive insulation layer arranged between said conductor tracks and said cooling plate; and

a heat sink through which a liquid can flow, said heat sink having an opening therein and a lateral first surface which delimits said opening and extends circumferentially around said opening;
wherein said first surface of said heat sink is at an angle (β) of less than about 90° with respect to said main surface of said cooling plate;
wherein said cooling plate is arranged in said opening;
wherein said lateral first surface of said cooling plate and said lateral first surface of said heat sink are arranged in a manner pressed against one another and extend circumferentially along said lateral first surface of said cooling plate and extend circumferentially along said lateral first surface of said heat sink;
wherein said heat sink has a lateral second surface which extends circumferentially around said opening;
wherein said opening is further delimited by said lateral second surface of said heat sink;
wherein said lateral second surface of said heat sink forms an inner surface of a first groove which extends circumferentially around said opening, and extends radially inwardly towards said cooling plate;
wherein said cooling plate has an edge region with a protuberance, said edge region extending circumferentially around said cooling plate, and extending outwardly towards said lateral second surface, and said protuberance being disposed in said first groove.

4. A power semiconductor device comprising:
a power semiconductor module having
electrically conductive conductor tracks with at least one power semiconductor component arranged thereon;
a cooling plate, said cooling plate having a main surface facing said at least one power semiconductor component and a lateral first surface which extends circumferentially around said cooling plate and is at an angle (α) of between about 89.5° and about 85° with respect to said main surface of said cooling plate; and
an electrically non-conductive insulation layer arranged between said conductor tracks and said cooling plate; and

a heat sink through which a liquid can flow, said heat sink having an opening therein and a lateral first surface which delimits said opening and extends circumferentially around said opening;
wherein said first surface of said heat sink is at an angle (β) which is approximately equal to said angle (α);
wherein said cooling plate is arranged in said opening;
wherein said lateral first surface of said cooling plate and said lateral first surface of said heat sink are arranged in a manner pressed against one another and extend circumferentially along said lateral first surface of said cooling plate and extend circumferentially along said lateral first surface of said heat sink;
wherein said heat sink has a lateral second surface which extends circumferentially around said opening;
wherein said opening is further delimited by said lateral second surface of said heat sink;
wherein said lateral second surface of said heat sink forms an inner surface of a first groove which extends circumferentially around said opening, and extends radially inwardly towards said cooling plate;
wherein said cooling plate has an edge region with

Assignees

• Semikron Elektronik Gmbh & Co Kg

Inventors

• Kulas Hartmut

Classifications

• H10W72/07331

  Connecting techniques · CPC title

• H10W72/07336

  Soldering or alloying · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W40/47

  by flowing liquids, e.g. forced water cooling · CPC title

• H10W40/255

  having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates · CPC title