Semiconductor substrate, semiconductor device and method of manufacturing the semiconductor device

Patent metadata

Field	Value
Publication number	US-9520286-B2
Application number	US-201414892034-A
Country	US
Kind code	B2
Filing date	May 2, 2014
Priority date	May 31, 2013
Publication date	Dec 13, 2016
Grant date	Dec 13, 2016

Abstract

A semiconductor substrate having a silicon-based substrate, a buffer layer provided on the silicon-based substrate and made of a nitride semiconductor containing boron, and an operation layer formed on the buffer layer, wherein a concentration of boron in the buffer layer gradually decreasing toward a side of the operation layer from a side of the silicon-based substrate. Thereby, the semiconductor substrate in which the buffer layer contains boron sufficient to obtain a dislocation suppression effect and boron is not diffused to the operation layer is provided.

First claim

The invention claimed is:

1. A semiconductor substrate comprising:
a silicon-based substrate;
a buffer layer provided on the silicon-based substrate and comprised of a nitride semiconductor containing boron; and
an operation layer formed on the buffer layer,
wherein the buffer layer has a stacked body comprising of three or more layers, and
a concentration of boron in the stacked body gradually decreases toward a side of the operation layer from a side of the silicon-based substrate.

2. The semiconductor substrate according to claim 1 ,
wherein a concentration of boron in a region at a side of the operation layer in the buffer layer is less than 5×10 16 atoms/cm 3 .

3. The semiconductor substrate according to claim 1 ,
wherein the buffer layer is stacked such that a first layer comprised of Al y Ga 1-y N and a second layer comprised of Al x Ga 1-x N(0≦x≦y≦1) are repeatedly stacked.

4. The semiconductor substrate according to claim 2 ,
wherein the buffer layer is stacked such that a first layer comprised of Al y Ga 1-y N and a second layer comprised of Al x Ga 1-x N(0≦x≦y≦1) are repeatedly stacked.

5. The semiconductor substrate according to claim 1 ,
wherein a concentration of boron of the silicon-based substrate is higher than a concentration of boron in a region at a side of the silicon-based substrate in the buffer layer.

6. The semiconductor substrate according to claim 2 ,
wherein a concentration of boron of the silicon-based substrate is higher than a concentration of boron in a region at a side of the silicon-based substrate in the buffer layer.

7. The semiconductor substrate according to claim 3 ,
wherein a concentration of boron of the silicon-based substrate is higher than a concentration of boron in a region at a side of the silicon-based substrate in the buffer layer.

8. The semiconductor substrate according to claim 4 ,
wherein a concentration of boron of the silicon-based substrate is higher than a concentration of boron in a region at a side of the silicon-based substrate in the buffer layer.

9. A semiconductor device comprising:
the semiconductor substrate according to claim 1 ;
a first electrode formed on the operation layer; and
a second electrode formed on the operation layer,
wherein the first electrode and the second electrode are disposed such that a current flows from the first electrode to the second electrode via the operation layer.

10. A semiconductor device comprising:
the semiconductor substrate according to claim 2 ;
a first electrode formed on the operation layer; and
a second electrode formed on the operation layer,
wherein the first electrode and the second electrode are disposed such that a current flows from the first electrode to the second electrode via the operation layer.

11. A semiconductor device comprising:
the semiconductor substrate according to claim 3 ;
a first electrode formed on the operation layer; and
a second electrode formed on the operation layer,
wherein the first electrode and the second electrode are disposed such that a current flows from the first electrode to the second electrode via the operation layer.

12. A semiconductor device comprising:
the semiconductor substrate according to claim 4 ;
a first electrode formed on the operation layer; and
a second electrode formed on the operation layer,
wherein the first electrode and the second electrode are disposed such that a current flows from the first electrode to the second electrode via the operation layer.

13. A semiconductor device comprising:
the semiconductor substrate according to claim 5 ;
a first electrode formed on the operation layer; and
a second electrode formed on the operation layer,
wherein the first electrode and the second electrode are disposed such that a current flows from the first electrode to the second electrode via the operation layer.

14. A method of manufacturing a semiconductor device comprising:
forming a buffer layer comprised of a nitride semiconductor on a silicon-based substrate, the buffer layer having a stacked body comprising of three or more layers; and
forming an operation layer on the buffer layer,
wherein the step of forming the buffer layer comprises a stage in which boron is introduced into the buffer layer such that a concentration of boron in the buffer layer gradually decreases toward a side of the operation layer from a side of the silicon-based substrate.

15. The method of manufacturing the semiconductor device according to claim 14 , wherein the stage in which boron is introduced into the buffer layer comprises a stage in which boron is diffused in the buffer layer from the silicon-based substrate in which boron is doped by thermal diffusion.

16. The method of manufacturing the semiconductor device according to claim 14 , wherein the stage in which boron is introduced into the buffer layer comprises a stage in which boron is doped from a vapor phase by introducing dopant gas when the buffer layer is formed by vapor phase epitaxial growth.

17. The method of manufacturing the semiconductor device according to claim 15 , wherein the stage in which boron is introduced into the buffer layer comprises a stage in which boron is doped from a vapor phase by introducing dopant gas when the buffer layer is formed by vapor phase epitaxial growth.

18. The method of manufacturing the semiconductor device according to claim 14 ,
wherein a stacked body in which a first layer comprised of Al y Ga 1-y N and a second layer comprised of Al x Ga 1-x N(0≦x≦y≦1) are repeatedly stacked is formed as the buffer layer, and
both of the first layer and the second layer contain the boron.

19. The method of manufacturing the semiconductor device according to claim 15 ,
wherein a stacked body in which a first layer comprised of Al y Ga 1-y N and a second layer comprised of Al x Ga 1-x N(0≦x≦y≦1) are repeatedly stacked is formed as the buffer layer, and
both of the first layer and the second layer contain the boron.

20. The method of manufacturing the semiconductor device according to claim 14 ,
wherein a concentration of boron of the silicon-based substrate is made higher than a concentration of boron in a region at a side of the silicon-based substrate in the buffer layer.

Assignees

• Sanken Electric Co Ltd
• Shinetsu Handotai Kk
• Shanken Electric Co Ltd

Inventors

• Shikauchi Hiroshi
• Sato Ken
• Goto Hirokazu
• Shinomiya Masaru
• Tsuchiya Keitaro
• Hagimoto Kazunori

Classifications

• H10P14/3254

  Graded layers · CPC title

• H10P14/3252

  Alternating layers, e.g. superlattice · CPC title

• H10P14/3216

  Nitrides · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title

• H10P14/2904

  Silicon carbide · CPC title