Methods for creating ligand induced paramagnetism in nanocrystalline structures

Patent metadata

Field	Value
Publication number	US-9520217-B2
Application number	US-33267108-A
Country	US
Kind code	B2
Filing date	Dec 11, 2008
Priority date	Dec 11, 2008
Publication date	Dec 13, 2016
Grant date	Dec 13, 2016

Abstract

A method according to one general embodiment includes applying an organic surfactant to a nanoparticle having a d 10 configuration for altering a magnetic property of the nanoparticle. A method according to another general embodiment includes applying an organic surfactant to a II-VI semiconductor nanoparticle having a d 10 configuration for altering a magnetic property of the nanoparticle, wherein the nanoparticle has a mean radius of less than about 50 Å.

First claim

What is claimed is:

1. A method, comprising:
applying dodecanonitrile (DDN) to a nanoparticle comprising CdSe for altering a magnetic property of the nanoparticle,
wherein the nanoparticle has a mean radius in a range of about 50 Å or less, and.

2. The method of claim 1 , wherein the nanoparticle is an alloy comprising a II-VI semiconductor.

3. The method of claim 1 , wherein the nanoparticle has a mean radius in a range of about 15 Å to about 9 Å.

4. The method of claim 1 , with the proviso that the nanoparticle comprises no more than 100 ppb total magnetic transition metal impurities.

5. The method of claim 1 , with the proviso that the nanoparticle comprises no more than 100 ppb total ferromagnetic material.

6. A method, comprising:
applying dodecanonitrile (DDN) to a nanoparticle for altering a magnetic property of the nanoparticle,
wherein the nanoparticle has a mean radius in a range from about 15 Å to about 9 Å.

7. The method of claim 6 , wherein the nanoparticle includes CdSe.

8. The method of claim 6 , wherein the nanoparticle comprises an alloy of one or more II-VI semiconductors.

9. The method of claim 6 , with the proviso that the nanoparticle comprises about 100 ppb or less total magnetic transition metal impurities.

10. The method of claim 6 , with the proviso that the nanoparticle comprises about 100 ppb or less total ferromagnetic material.

11. The method as recited in claim 1 , wherein altering the magnetic property of the nanoparticle comprises inducing a paramagnetism in the nanoparticle.

12. The method as recited in claim 11 , wherein the paramagnetism is induced by one or more molecular interactions between the nanoparticle and the DDN.

13. The method as recited in claim 11 , wherein the paramagnetism is induced by a chemical impurity in a passivating agent solvent and/or on a surface of the nanoparticle-surfactant complex.

14. The method as recited in claim 13 , wherein the chemical impurity is an organic impurity, and wherein the organic impurity includes a cyano group.

15. The method as recited in claim 8 , wherein the one or more II-VI semiconductors comprise CdSe.

16. The method of claim 1 , the nanoparticle consisting of the CdSe.

17. The method as recited in claim 6 , wherein the nanoparticle consists of platinum.

18. The method as recited in claim 1 , wherein the nanoparticle consists of the CdSe, wherein the nanoparticle has a mean radius in a range of about 15 Å to about 9 Å, wherein the nanoparticle comprises no more than 100 ppb total magnetic transition metal impurities, and wherein the nanoparticle comprises no more than 100 ppb total ferromagnetic material.

19. The method as recited in claim 1 , wherein the nanoparticle consists of an alloy of the CdSe and at least one additional II-VI semiconductor material, wherein the nanoparticle has a mean radius in a range of about 15 Å to about 9 Å, wherein the nanoparticle comprises no more than 100 ppb total magnetic transition metal impurities, and wherein the nanoparticle comprises no more than 100 ppb total ferromagnetic material.

20. The method as recited in claim 6 , wherein the nanoparticle consists of CdSe, wherein the nanoparticle comprises no more than 100 ppb total magnetic transition metal impurities, and wherein the nanoparticle comprises no more than 100 ppb total ferromagnetic material.

21. The method as recited in claim 6 , wherein the nanoparticle consists of Pt, wherein the nanoparticle comprises no more than 100 ppb total magnetic transition metal impurities, and wherein the nanoparticle comprises no more than 100 ppb total ferromagnetic material.

22. The method as recited in claim 6 , wherein the nanoparticle consists of an alloy of II-VI semiconductors, wherein the nanoparticle comprises no more than 100 ppb total magnetic transition metal impurities, and wherein the nanoparticle comprises no more than 100 ppb total ferromagnetic material.

23. A method, comprising:
immersing nanoparticles comprising a group II-VI semiconductor or an alloy including group II-VI semiconductors in dodecanonitrile (DDN);
sonicating the nanoparticles immersed in the DDN for at least three hours;
centrifuging the sonicated nanoparticles and DDN; and
decanting a supernatant from the centrifuged nanoparticles and DDN.

24. The method as recited in claim 23 , comprising adding methanol to the supernatant to precipitate ligand-exchanged ones of the nanoparticles; and
centrifuging the methanol and supernatant; and
collecting a precipitate after centrifugation, the precipitate comprising the ligand-exchanged ones of the nanoparticles.

25. The method as recited in claim 23 , comprising adding methanol to the supernatant to precipitate ligand-exchanged ones of the nanoparticles;
centrifuging the methanol and supernatant; and
collecting a precipitate after centrifugation, the precipitate comprising the ligand-exchanged ones of the nanoparticles.

26. The method as recited in claim 23 , wherein the nanoparticles consist of CdSe.

27. The method as recited in claim 23 , wherein the nanoparticles consist of CdSe, wherein the nanoparticles has a mean radius in a range of about 15 Å to about 9 Å, wherein the nanoparticles comprise no more than 100 ppb total magnetic transition metal impurities, and wherein the nanoparticles comprise no more than 100 ppb total ferromagnetic material.

28. The method as recited in claim 23 , wherein the nanoparticles consist of an alloy of CdSe and at least one additional II-VI semiconductor material, wherein the nanoparticles has a mean radius in a range of about 15 Å to about 9 Å, wherein the nanoparticles comprise no more than 100 ppb total magnetic transition metal impurities, and wherein the nanoparticles comprise no more than 100 ppb total ferromagnetic material.

29. The method as recited in claim 23 , wherein the nanoparticles consist of CdSe, wherein the nanoparticles comprises no more than 100 ppb total magnetic transition metal impurities, and wherein the nanoparticles comprises no more than 100 ppb total ferromagnetic material.

30. The method as recited in claim 23 , wherein the nanoparticles comprises no more than 100 ppb total magnetic transition metal impurities, and wherein the nanoparticles comprises no more than 100 ppb total ferromagnetic material.

31. The method as recited in claim 23 , wherein the nanoparticles consist of the alloy of II-VI semiconductors, wherein the nanoparticles comprise no more than 100 ppb total magnetic transition metal impurities, and wherein the nanoparticles comprise no more than 100 ppb total ferromagnetic material.

Assignees

• Meulenberg Robert W
• Lee Jonathan R I
• Van Buuren Anthony W
• Terminello Louis J
• L Livermore Nat Security Llc

Inventors

• Meulenberg Robert W
• Lee Jonathan R I
• Van Buuren Anthony W
• Terminello Louis J

Classifications

• H01F1/42 Primary

  of organic or organo-metallic materials {, e.g. graphene}(H01F1/44 takes precedence) · CPC title

• H01F1/402

  of II-VI type, e.g. Zn1-x Crx Se · CPC title