Threshold voltage compensation in a memory

Patent metadata

Field	Value
Publication number	US-9520183-B2
Application number	US-201514707684-A
Country	US
Kind code	B2
Filing date	May 8, 2015
Priority date	Aug 26, 2011
Publication date	Dec 13, 2016
Grant date	Dec 13, 2016

Abstract

Threshold voltages in a charge storage memory are controlled by threshold voltage placement, such as to provide more reliable operation and to reduce the influence of factors such as neighboring charge storage elements and parasitic coupling. Pre-compensation or post-compensation of threshold voltage for neighboring programmed “aggressor” memory cells reduces the threshold voltage uncertainty in a flash memory system. Using a buffer having a data structure such as a lookup table provides for programmable threshold voltage distributions that enables the distribution of data states in a multi-level cell flash memory to be tailored, such as to provide more reliable operation.

First claim

The invention claimed is:

1. A method of operating a memory, comprising:
providing an analog ramp signal to a control gate of a memory cell;
converting a value of a digital signal corresponding to the analog ramp signal to a converted digital value; and
providing the converted digital value to a buffer coupled to the memory cell, wherein a difference between the converted digital value and the digital signal value results in a difference in threshold voltage in the memory cell…

Assignees

• Micron Technology Inc

Inventors

• Moschiano Violante
• Vali Tommaso
• Naso Giovanni
• Sarin Vishal
• Radke William Henry
• Pekny Theodore T

Classifications

• G11C2211/5641

  Physics · mapped topic

• G11C11/5628

  Physics · mapped topic

• G11C16/26

  Physics · mapped topic

• G11C16/0483

  Physics · mapped topic

• G11C16/10

  Physics · mapped topic