Multiple layer FePt structure

Patent metadata

Field	Value
Publication number	US-9520151-B2
Application number	US-201313836521-A
Country	US
Kind code	B2
Filing date	Mar 15, 2013
Priority date	Feb 12, 2009
Publication date	Dec 13, 2016
Grant date	Dec 13, 2016

Abstract

A method involves depositing a seed layer comprising at least A1 phase FePt. A main layer of A1 phase FePt is deposited over the seed layer. The main layer includes FePt of a different stoichiometry than the seed layer. The seed and main layers are annealed to convert the A1 phase FePt to L10 phase FePt. The annealing involves heating the substrate prior to depositing at least part of the A1 phase FePt of the main or seed layers.

First claim

What is claimed is:

1. A method comprising:
depositing a seed layer comprising at least A1 phase FePt;
depositing a main layer of A1 phase FePt on the seed layer, wherein the main layer comprises FePt of a different stoichiometry than the seed layer; and
annealing the seed and main layers to convert the A1 phase FePt to L1 0 phase FePt, the annealing step comprising heating the substrate prior to depositing at least part of the A1 phase FePt of the main or seed layers, the main and seed layer forming a graded FePt structure of varying stoichiometry responsive to said annealing.

2. The method of claim 1 , wherein the main layer comprises a Fe:Pt ratio approximately equal to 1, and wherein the seed layer comprises a Fe:Pt ratio greater than or less than 1.

3. The method of claim 1 , wherein the seed layer comprises a bilayer structure comprising:
a first FePt layer proximate a substrate having a Fe:Pt ratio lower than that of the main layer; and
a second FePt layer proximate the main layer having a Fe:Pt ratio higher than that of the main layer.

4. The method of claim 1 , further comprising depositing a cap layer comprising a Fe:Pt ratio greater than or less than 1 onto the main layer, and wherein after the annealing the main layer and cap layer form a graded FePt composition.

5. The method of claim 1 , further comprising depositing a cap layer comprising Cu onto the main layer, and wherein after the annealing the main layer and cap layer form a graded FePtCu composition.

6. The method of claim 1 , wherein at least one of the seed and main layers comprise a grain boundary isolation material, wherein the grain boundary isolation material comprises at least one of a carbide, an oxide, a carbon, and an amorphous structure.

7. A method comprising:
depositing a main layer comprising at least A1 phase FePt, the main layer having a Fe:Pt ratio approximately equal to 1;
depositing a cap layer of A1 phase FePt on the main layer having a different stoichiometry than the main layer and a Fe:Pt ratio greater than or less than 1; and
annealing the main and cap layers to convert the A1 phase FePt to L1 0 phase FePt, the annealing comprising heating the substrate prior to depositing at least part of the A1 phase FePt of the main layer or the cap layer.

8. The method of claim 7 , wherein after the annealing the main layer and cap layer form a graded FePt structure of varying stoichiometry.

9. The method of claim 7 , wherein the cap layer comprises Cu, and wherein after the annealing the main layer and cap layer form a graded FePtCu composition.

10. The method of claim 7 , wherein at least one of the main and cap layers comprise a grain boundary isolation material, wherein the grain boundary isolation material comprises at least one of a carbide, an oxide, a carbon, and an amorphous structure.

11. The method of claim 1 , wherein the annealing step comprises applying heat at a temperature of from about 200° C. to about 600° C.

12. The method of claim 7 , wherein the annealing step comprises applying heat at a temperature of from about 200° C. to about 600° C.

13. A method comprising:
depositing a seed layer comprising at least A1 phase FePt;
depositing a main layer of A1 phase FePt on the seed layer, the main layer comprising FePt of a different stoichiometry than the seed layer;
depositing a cap layer comprising A1 phase FePt and Cu on the main layer; and
annealing the seed and main layers to convert the A1 phase FePt to L1 0 phase FePt, the annealing step comprising heating the substrate prior to depositing at least part of the A1 phase FePt of the main or seed layers, after the annealing step the main layer and cap layer forming a graded FePtCu composition.

14. The method of claim 13 , wherein the main layer comprises a Fe:Pt ratio approximately equal to 1, and wherein the seed layer comprises a Fe:Pt ratio greater than or less than 1.

15. The method of claim 13 , wherein the seed layer comprises a bilayer structure comprising:
a first FePt layer proximate a substrate having a Fe:Pt ratio lower than that of the main layer; and
a second FePt layer proximate the main layer having a Fe:Pt ratio higher than that of the main layer.

16. The method of claim 13 , wherein the cap layer has a Fe:Pt ratio greater than or less than 1.

17. The method of claim 13 , wherein at least one of the seed and main layers comprise a grain boundary isolation material, wherein the grain boundary isolation material comprises at least one of a carbide, an oxide, a carbon, and an amorphous structure.

Assignees

• Seagate Technology Llc

Inventors

• Qui Jiaoming
• Chen Yonghua
• Ju Ganping
• Nolan Thomas P

Classifications

• G11B5/84 Primary

  Processes or apparatus specially adapted for manufacturing record carriers · CPC title

• G11B5/66

  the record carriers consisting of several layers · CPC title

• G11B5/65

  characterised by its composition (G11B5/66 takes precedence) · CPC title

• C21D2211/004

  Dispersions; Precipitations · CPC title

• C21D8/12

  during manufacturing of articles with special electromagnetic properties · CPC title