Light-emitting device and light-emitting apparatus

Patent metadata

Field	Value
Publication number	US-9518215-B2
Application number	US-201514618254-A
Country	US
Kind code	B2
Filing date	Feb 10, 2015
Priority date	Feb 28, 2014
Publication date	Dec 13, 2016
Grant date	Dec 13, 2016

Abstract

A light-emitting device includes a photoluminescent layer that emits light containing first light, a light-transmissive layer located on or near the photoluminescent layer, and one or more reflectors. A submicron structure is defined on at least one of the photoluminescent layer and the light-transmissive layer. The one or more reflector are located outside the submicron structure. The submicron structure includes at least projections or recesses and satisfies the following relationship:

λ a /n wav-a <D int <λ a

where D int is a center-to-center distance between adjacent projections or recesses, λ a is the wavelength of the first light in air, and n wav-a is the refractive index of the photoluminescent layer for the first light.

First claim

What is claimed is:

1. A light-emitting device comprising:
a photoluminescent layer that has a first surface perpendicular to a thickness direction thereof and emits light containing first light, an area of the first surface being larger than a sectional area of the photoluminescent layer perpendicular to the first surface;
a light-transmissive layer located on the photoluminescent layer; and
one or more reflectors that are located directly on at least one of the photoluminescent layer and the light-transmissive layer, and at least partially surround the submicron structure, wherein
at least one of the photoluminescent layer and the light-transmissive layer has a submicron structure comprising at least projections or recesses arranged perpendicular to a thickness direction of the photoluminescent layer,
at least one of the photoluminescent layer and the light-transmissive layer has a light emitting surface perpendicular to the thickness direction of the photoluminescent layer, the first light being emitted from the light emitting surface,
the submicron structure satisfies the following relationship:
λ a/ n wav-a <D int <λ a

where D int is a center-to-center distance between adjacent projections or recesses, λ a is the wavelength of the first light in air, and n wav-a is the refractive index of the photoluminescent layer for the first light, and
a thickness of the photoluminescent layer, the refractive index of the photoluminescent layer and the center-to-center distance are set to limit a directional angle of the first light emitted from the light emitting surface.

2. The light-emitting device according to claim 1 , wherein the one or more reflectors include at least one reflector comprising a reflective metal surface located on an end surface of the photoluminescent layer.

3. The light-emitting device according to claim 2 , further comprising a phase-matching element between the submicron structure and the reflective metal surface.

4. The light-emitting device according to claim 1 , wherein the one or more reflectors include at least one pair of reflectors that are arranged in a direction of a periodic pattern of the submicron structure in such a way that the submicron structure is located between the pair of reflectors.

5. A light-emitting apparatus comprising:
the light-emitting device according to claim 1 ; and
a light source that directs excitation light into the light-emitting device.

6. A light-emitting device according to claim 1 , wherein the photoluminescent layer includes a phosphor.

7. The light-emitting device according to claim 1 , wherein 380 nm≦λa≦780 nm is satisfied.

8. The light-emitting device according to claim 1 , wherein the thickness of the photoluminescent layer, the refractive index of the photoluminescent layer and the center-to-center distance are set to allow an electric field to be formed in the photoluminescent layer, in which antinodes of the electric field are located in areas, the areas each corresponding to respective one of the projections and/or recesses.

9. The light-emitting device according to claim 1 , wherein the light-transmissive layer is located indirectly on the photoluminescent layer.

10. The light-emitting device according to claim 1 , wherein the directional angle is limited less than 15 degrees.

11. The light-emitting apparatus according to claim 1 , further comprising a substrate that has refractive index n s-a for the first light and is located on the photoluminescent layer, wherein λ a /n wav-a <p a <λ a /n s-a is satisfied.

12. The light-emitting device according to claim 1 , wherein the thickness of the photoluminescent layer, the refractive index of the photoluminescent layer and the center-to-center distance are set to allow an electric field to be formed in the photoluminescent layer, in which antinodes of the electric field are located at, or adjacent to, at least the projections or recesses.

13. A light-emitting device comprising:
a photoluminescent layer that has a first surface perpendicular to a thickness direction thereof and emits light containing first light, an area of the first surface being larger than a sectional area of the photoluminescent layer perpendicular to the first surface;
a light-transmissive layer having a higher refractive index than the photoluminescent layer; and
one or more reflectors that are located directly on at least one of the photoluminescent layer and the light-transmissive layer, and at least partially surround the submicron structure, wherein
the light-transmissive layer has a submicron structure comprising a periodic structure having at least projections or recesses arranged perpendicular to a thickness direction,
at least one of the photoluminescent layer and the light-transmissive layer has a light emitting surface perpendicular to the thickness direction of the photoluminescent layer, the first light being emitted from the light emitting surface,
the periodic structure satisfies the following relationship:
λ a /n wav-a <p a <λ a

where p a is the period of the periodic structure, λ a is the wavelength of the first light in air, and n wav-a is the refractive index of the photoluminescent layer for the first light, and
a thickness of the photoluminescent layer, the refractive index of the photoluminescent layer and the period of the periodic structure are set to limit a directional angle of the first light emitted from the light emitting surface.

14. The light-emitting device according to claim 13 , wherein a distance between the submicron structure and the photoluminescent layer is more than λa/2.

15. A light-emitting device comprising:
a light-transmissive layer having a submicron structure; a photoluminescent layer that has a first surface perpendicular to a thickness direction thereof and is located on the submicron structure and emits light containing first light; and
one or more reflectors that are located directly on the light-transmissive layer and, at least partially surround the submicron structure, wherein
at least one of the photoluminescent layer and the light-transmissive layer has a light emitting surface perpendicular to a thickness direction of the photoluminescent layer, the first light being emitted from the light emitting surface,
the submicron structure comprises a periodic structure having at least projections or recesses arranged perpendicular to the thickness direction,
the periodic structure satisfies the following relationship:
λ a /n wav-a <p a <λ a

where p a is the period of the periodic structure, λ a is the wavelength of the first light in air, and n wav-a is the refractive index of the photoluminescent layer for the first light, and
a thickness of the photoluminescent layer, the refractive index of the photoluminescent layer and the period of the periodic structure are set to limit a directional angle of the first light emitted from the light emitting surface.

16. A light-emitting device comprising:
a photoluminescent layer that has a first surface perpendicular to a thickness direction thereof and emits light containing first light, an area of the first surface being larger than a sectional area of the photoluminescent layer perpendicular to the first surface; and
one or more reflectors that are located directly on the photoluminescent layer, and at least partially surround the submicron structure, wherein
the photoluminescent layer has a submicron structure comprising a periodic structure having at least projections or recesses arranged perpendicular to a thickness

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Hirasawa Taku
• Inada Yasuhisa
• Nakamura Yoshitaka
• Hashiya Akira
• Nitta Mitsuru
• Yamaki Takeyuki

Classifications

• C09K11/7721

  Aluminates · CPC title

• H01L33/508

  Electricity · mapped topic

• C09K11/00 Primary

  Luminescent materials, e.g. electroluminescent or chemiluminescent · CPC title

• H05B33/14 Primary

  characterised by the chemical or physical composition or the arrangement of the electroluminescent material {, or by the simultaneous addition of the electroluminescent material in or onto the light source} · CPC title

• H10H20/8516

  having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient · CPC title