Hot-socket circuitry

Patent metadata

Field	Value
Publication number	US-9515643-B2
Application number	US-201414147796-A
Country	US
Kind code	B2
Filing date	Jan 6, 2014
Priority date	Jan 6, 2014
Publication date	Dec 6, 2016
Grant date	Dec 6, 2016

Abstract

In one embodiment, an integrated circuit has hot-socket circuitry to protect I/O drivers during hot-socket events. The hot-socket circuitry has (i) N-well-to-pad switcher circuitry that ties driver PMOS N-wells to pads when the pad voltages are greater than the power-supply voltage and (ii) N-well-to-power-supply switcher circuitry that ties the driver PMOS N-wells to the power supply when the pad voltages are less than the power-supply voltage. The hot-socket circuitry also has a special PMOS device connected between the pad and a gate of at least one other PMOS device in the N-well-to-power-supply switcher circuitry to turn off the N-well-to-power-supply switcher circuitry quickly whenever the pad voltage is greater than the power-supply voltage. Applying a reduced power-supply voltage level to the gate of the special PMOS device enables the hot-socket circuitry to be implemented without having to use low Vt devices and without having to implement substantially large drive strengths.

First claim

What is claimed is:

1. An integrated circuit comprising:
a driver; and
hot-socket circuitry configured to protect the driver during hot-socket events, wherein the hot-socket circuitry comprises:
N-well-to-pad switcher circuitry configured to tie an N-well of a first transistor device in the driver to a pad for the driver, when the pad has a higher voltage level than a power supply voltage for the driver;
N-well-to-power-supply switcher circuitry configured to tie the N-well of the first transistor device in the driver to the power supply voltage, when the pad has a lower voltage level than the power supply voltage; and
a second transistor device having its channel connected between the pad and a gate of at least one other transistor device in the N-well-to-power-supply switcher circuitry and its gate connected to a gate voltage signal generated to be a specified voltage level below the power supply voltage.

2. The integrated circuit of claim 1 , further comprising circuitry configured to generate the gate voltage signal.

3. The integrated circuit of claim 2 , wherein the circuitry configured to generate the gate voltage signal comprises a resistor series connected to a current mirror, wherein the gate voltage signal is tapped from the resistor series.

4. The integrated circuit of claim 1 , further comprising a capacitor connected between the power supply voltage and the gate voltage signal and configured to improve tracking of the power supply voltage by the gate voltage signal.

5. The integrated circuit of claim 1 , wherein:
the driver is an output driver; and
the first, second, and at least one other transistor device are PMOS devices.

6. The integrated circuit of claim 1 , wherein pseudo-linear circuitry is implemented to control a gate of current-bleed circuitry to keep the current-bleed circuitry turned on strongly across the power supply voltage VCCIO from about 1.2V to about 3.3V.

7. An integrated circuit comprising:
a driver including a transistor n-well; and
hot-socket circuitry configured to protect the driver during hot-socket events, wherein the hot-socket circuitry comprises:
a first transistor having a gate and channel, the first transistor gate coupled to a first voltage source of the integrated circuit and the first transistor channel coupled between a pad for the integrated circuit and the driver transistor n-well;
a second transistor having a gate and a channel, the second transistor gate coupled to the pad and the second transistor channel coupled between the first voltage source and the driver transistor n-well;
a third transistor having a gate and a channel, the third transistor channel coupled between the first voltage source and the driver transistor n-well; and
a fourth transistor having a gate and a channel, the fourth transistor gate coupled to a second voltage source of the integrated circuit and the fourth transistor channel coupled between the pad and the gate of the third transistor,

wherein the voltage level of the second voltage source is specified below the voltage level of the first voltage source.

8. The integrated circuit of claim 7 including a fifth transistor having a gate and channel, the fifth transistor gate coupled to a third voltage source of the integrated circuit and the fifth transistor channel coupled between the gate of the third transistor and ground.

9. The integrated circuit of claim 8 wherein the first, second, third, and fourth transistors are PMOS devices and the fifth transistor is an NMOS device.

Assignees

• Lattice Semiconductor Corp

Inventors

• Truong Keith
• Sharpe-Geisler Brad
• Lall Ravi
• Tran Giap

Classifications

• H03K17/08 Primary

  Modifications for protecting switching circuit against overcurrent or overvoltage · CPC title

• H03K17/6872

  using complementary field-effect transistors · CPC title

• H02H9/044

  Physical layout, materials not provided for elsewhere (varistors H01C7/12; spark-gaps H01T; Ovshinsky devices H10N70/00) · CPC title

• H02H9/043

  Protection of over-voltage protection device by short-circuiting · CPC title