Micro led display panel
US-2024371838-A1 · Nov 7, 2024 · US
Semiconductor light-emitting device
US9515224B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9515224-B2 |
| Application number | US-201514662149-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 18, 2015 |
| Priority date | Aug 25, 2014 |
| Publication date | Dec 6, 2016 |
| Grant date | Dec 6, 2016 |
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- Title
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Abstract
Official abstract text for this publication.
A semiconductor light-emitting device includes a substrate, a first reflective layer disposed on the substrate and including first openings, a first conductivity-type semiconductor layer grown in and extending from the first openings and connected on the first reflective layer, a second reflective layer disposed on the first conductivity-type semiconductor layer and including second openings having lower surfaces disposed to be spaced apart from upper surfaces of the first openings, and a plurality of light-emitting nanostructures including nanocores extending from the second openings and formed of a first conductivity-type semiconductor material, and active layers and second conductivity-type semiconductor layers sequentially disposed on the nanocores.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor light-emitting device, comprising: a substrate; a first reflective layer disposed on the substrate and including first openings; a first conductivity-type semiconductor layer grown in and extending from the first openings and connected on the first reflective layer; a second reflective layer disposed on the first conductivity-type semiconductor layer and including second openings having lower surfaces disposed to be spaced apart from upper surfaces of the first openings; and a plurality of light-emitting nanostructures including nanocores extending from the second openings and formed of a first conductivity-type semiconductor material, and active layers and second conductivity-type semiconductor layers sequentially disposed on the nanocores. 2. The semiconductor light-emitting device of claim 1 , wherein: the first reflective layer includes a pillar-shaped distributed Bragg reflector extending perpendicular to the substrate, and the pillar-shaped distributed Bragg reflector is surrounded by the first openings. 3. The semiconductor light-emitting device of claim 1 , wherein the first openings have a pillar shape extending perpendicular to the substrate, and the first reflective layer includes a distributed Bragg reflector surrounding the first openings. 4. The semiconductor light-emitting device of claim 3 , wherein areas of the upper surfaces of the first openings are greater than areas of the lower surfaces of the second openings. 5. The semiconductor light-emitting device of claim 1 , wherein the second reflective layer includes a distributed Bragg reflector surrounding the second openings. 6. The semiconductor light-emitting device of claim 1 , further comprising: a third reflective layer disposed below the first reflective layer and including third openings having upper surfaces disposed to be spaced apart from lower surfaces of the first openings; and a first conductivity-type semiconductor bottom layer grown in and extending from the third openings and connected on the third reflective layer. 7. The semiconductor light-emitting device of claim 1 , further comprising a buffer layer disposed on the substrate. 8. The semiconductor light-emitting device of claim 1 , further comprising a first electrode disposed on the first conductivity-type semiconductor layer. 9. The semiconductor light-emitting device of claim 1 , further comprising a contact electrode layer disposed on the plurality of light-emitting nanostructures and the second reflective layer. 10. The semiconductor light-emitting device of claim 1 , wherein a thickness of a portion of the first conductivity-type semiconductor layer formed on the first reflective layer is less than that of the first reflective layer. 11. The semiconductor light-emitting device of claim 1 , wherein the substrate is silicon (Si) substrate.
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01L33/24Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9515224B2 cover?
- A semiconductor light-emitting device includes a substrate, a first reflective layer disposed on the substrate and including first openings, a first conductivity-type semiconductor layer grown in and extending from the first openings and connected on the first reflective layer, a second reflective layer disposed on the first conductivity-type semiconductor layer and including second openings ha…
- Who is the assignee on this patent?
- Samsung Electronics Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01L33/24. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Dec 06 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).