Solar cell and method for manufacturing with pre-amorphization implant to form emitter

Patent metadata

Field	Value
Publication number	US-9515212-B2
Application number	US-201514605394-A
Country	US
Kind code	B2
Filing date	Jan 26, 2015
Priority date	Dec 5, 2011
Publication date	Dec 6, 2016
Grant date	Dec 6, 2016

Abstract

A method for manufacturing a solar cell includes preparing a semiconductor substrate having a first conductivity type dopant; ion-implanting a pre-amorphization elements into a front surface of the semiconductor substrate to form an amorphous layer; and forming an emitter layer by ion-implanting second conductivity type dopant into the front surface of the semiconductor substrate. The method then further includes heat-treating the layers to activate the second conductivity type dopant. The method further includes forming a back surface field layer at a back surface of the semiconductor substrate by ion-implanting a first conductivity type dopant.

First claim

What is claimed is:

1. A solar cell, comprising:
a semiconductor substrate having a first conductivity type dopant;
an emitter layer at a front surface of the semiconductor substrate, the emitter layer comprising a second conductivity type dopant and a pre-amorphization element having an atomic number greater than that of the second conductivity type dopant;
a first electrode electrically connected to the emitter layer; and
a second electrode electrically connected to the semiconductor substrate,
wherein the emitter layer comprises:
a first layer adjacent to the front surface of the semiconductor substrate and including the pre-amorphization element and the second conductivity type dopant; and
a second layer at a portion of the semiconductor substrate deeper than the first layer and including the second conductivity type dopant, and

wherein the second layer does not include the pre-amorphization element.

2. The solar cell according to claim 1 , wherein the pre-amorphization element comprises an element selected from the group consisting of carbon group elements and noble gas group elements.

3. The solar cell according to claim 2 , wherein the pre-amorphization element comprises one of argon (Ar) and germanium (Ge).

4. The solar cell according to claim 1 , wherein the semiconductor substrate has an n-type, and wherein the second conductivity type dopant comprises one of boron (B) and gallium (Ga).

5. The solar cell according to claim 1 , wherein the second layer has a thickness greater than that of the first layer.

6. The solar cell according to claim 5 , wherein a thickness ratio of the emitter layer to the first layer is 1:0.05˜1:0.15.

7. The solar cell according to claim 1 , wherein the first conductivity type dopant comprises phosphorus (P).

8. The solar cell according to claim 1 , wherein the emitter layer has an electrical sheet resistance of 50-100 ohm/square and a junction depth of about 500 nm-1 μm, and a surface concentration of the second conductivity type dopants of 10×10 20 ˜10×10 22 /cm 3 .

Assignees

• Lg Electronics Inc

Inventors

• Lee Kyoungsoo
• Lee Seongeun

Classifications

• H10W90/00

  Package configurations · CPC title

• Y02P70/50

  Manufacturing or production processes characterised by the final manufactured product · CPC title

• Y02E10/547

  Monocrystalline silicon PV cells · CPC title

• H10F71/00

  Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title

• H10F71/121

  The active layers comprising only Group IV materials · CPC title