Solar cell module including transparent conductive film with uniform thickness

Patent metadata

Field	Value
Publication number	US-9515201-B2
Application number	US-201514707795-A
Country	US
Kind code	B2
Filing date	May 8, 2015
Priority date	Sep 26, 2013
Publication date	Dec 6, 2016
Grant date	Dec 6, 2016

Abstract

Provided is a solar cell module comprising a crystalline silicon wafer, at least one amorphous silicon layer provided on at least one of a top and bottom of the crystalline silicon wafer, a transparent conductive film provided on a surface of the at least one amorphous silicon layer, electrodes provided on a surface of the transparent conductive film and a division unit to divide the transparent conductive film into a current-carrying region and a non-current-carrying region, wherein the current-carrying region is electrically connected to the electrodes and the non-current-carrying region is electrically disconnected from the electrodes.

First claim

The invention claimed is:

1. A method for manufacturing a solar cell module, comprising :
depositing an amorphous silicon layer on at least one of a top and bottom of a crystalline silicon wafer;
depositing a transparent conductive film on a surface of the amorphous silicon layer, the transparent conductive film comprising a current-carrying region having a uniform thickness and a non-current-carrying region having a non-uniform thickness, wherein the non-current-carrying region is provided along an edge of the current-carrying region and the thickness of the non-current-carrying region is relatively thicker or thinner than the thickness of current-carrying region;
depositing an electrode on a surface of the current-carrying region of the transparent conductive film; and
forming a groove along a boundary between the current-carrying region and the non-current-carrying region, to divide the transparent conductive film into the current-carrying region and the non-current-carrying region.

2. The method for manufacturing a solar cell module according to claim 1 , wherein a depth of the groove is equal to or greater than a thickness of the transparent conductive film.

Assignees

• Tes Co Ltd
• Tes Co Ltd

Inventors

• Lee Hong-Jae

Classifications

• H10P50/20

  Dry etching; Plasma etching; Reactive-ion etching · CPC title

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/40

  of conductive or resistive materials · CPC title

• H01L31/1884

  Electricity · mapped topic