Organic molecular memory

Patent metadata

Field	Value
Publication number	US-9515195-B2
Application number	US-201514703075-A
Country	US
Kind code	B2
Filing date	May 4, 2015
Priority date	Mar 24, 2011
Publication date	Dec 6, 2016
Grant date	Dec 6, 2016

Abstract

An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including variable-resistance molecular chains or charge-storage molecular chains, the variable-resistance molecular chains or the charge-storage molecular chains having electron-withdrawing substituents.

First claim

What is claimed is:

1. An organic molecular memory comprising
a semiconductor layer;
an organic molecular layer formed above the semiconductor layer, the organic molecular layer including metal atoms, carbon atoms and halogen atoms, the metal atoms being distributed in the organic molecular layer, and one of the metal atoms surrounded by some of the carbon atoms and some of the halogen atoms, the halogen atoms being selected from the group of fluorine atoms, bromine atoms and iodine atoms;
an insulating layer formed above the organic layer; and
a gate electrode formed above the insulating layer.

2. The memory according to claim 1 , wherein the organic molecular layer further includes nitrogen atoms.

3. The memory according to claim 1 , wherein the organic molecular layer further includes nitrogen atoms, some of the nitrogen atoms are positioned closer to the one of the metal atoms, compared to the some of the halogen atoms.

4. The memory according to claim 1 , wherein the metal atoms are copper atoms.

5. The memory according to claim 1 , wherein the organic molecular layer is located closer to the semiconductor layer compared to the insulating layer.

6. The memory according to claim 1 , wherein the organic molecular layer further includes a plurality of charge-storage molecular chains, and one end of the plurality of charge-storage molecular chains is chemically bound to the semiconductor layer.

7. The memory according to claim 1 , wherein the organic molecular layer further includes a plurality of charge-storage molecular chains, and one of charge-storage molecular chains includes the one of the metal atoms surrounded by the some of the carbon atoms and the some of the halogen atoms.

8. The memory according to claim 1 , wherein the organic molecular layer further includes a plurality of charge-storage molecular chains, one of charge-storage molecular chains includes a linker, and the linker is positioned at a semiconductor layer-side.

9. The memory according to claim 1 , wherein the organic molecular layer further includes a plurality of charge-storage molecular chains, and one of charge-storage molecular chains includes a linker being chemically bound to the semiconductor layer.

10. The memory according to claim 1 , wherein the semiconductor layer is a silicon substrate.

11. The memory according to claim 2 , wherein the metal atoms are copper atoms.

12. An organic molecular memory comprising
a semiconductor layer;
an organic molecular layer formed above the semiconductor layer, the organic molecular layer including metal atoms, carbon atoms and halogen atoms, the metal atoms being distributed in the organic molecular layer, and one of the metal atoms surrounded by some of the carbon atoms and some of the halogen atoms;
an insulating layer formed above the organic layer; and
a gate electrode formed above the insulating layer,
wherein the metal atoms are atoms selected from the group of zinc atoms, iron atoms, cobalt atoms, nickel atoms, and copper atoms.

13. An organic molecular memory comprising
a semiconductor layer;
an organic molecular layer formed above the semiconductor layer, the organic molecular layer including metal atoms, carbon atoms and halogen atoms, the metal atoms being distributed in the organic molecular layer, and one of the metal atoms surrounded by some of the carbon atoms and some of the halogen atoms;
an insulating layer formed above the organic layer; and
a gate electrode formed above the insulating layer,
wherein the insulating layer has a film stack, the film stack being one of a film stack of a silicon oxide film, a silicon nitride film, and a high-permittivity film, a film stack of a silicon oxide film and a high-permittivity film, and a film stack of a silicon nitride film and a high-permittivity film.

14. An organic molecular memory comprising
a semiconductor layer;
an organic molecular layer formed above the semiconductor layer, the organic molecular layer including metal atoms, carbon atoms and halogen atoms, the metal atoms being distributed in the organic molecular layer, one of the metal atoms surrounded by first group of the carbon atoms and some of the halogen atoms, and another one of the metal atoms surrounded by second group of the carbon atoms, the halogen atoms being selected from the group of fluorine atoms, bromine atoms and iodine atoms;
an insulating layer formed above the organic layer; and
a gate electrode formed above the insulating layer.

15. The memory according to claim 14 , wherein the organic molecular layer further includes nitrogen atoms.

16. The memory according to claim 14 , wherein the organic molecular layer further includes nitrogen atoms, some of the nitrogen atoms are positioned closer to the one of the metal atoms, compared to the some of the halogen atoms.

17. The memory according to claim 14 , wherein the metal atoms are copper atoms.

18. The memory according to claim 14 , wherein the organic molecular layer is located closer to the semiconductor layer compared to the insulating layer.

19. The memory according to claim 14 , wherein the organic molecular layer further includes a plurality of charge-storage molecular chains, and one end of the plurality of charge-storage molecular chains is chemically bound to the semiconductor layer.

20. The memory according to claim 14 , wherein the organic molecular layer further includes a plurality of charge-storage molecular chains, one of charge-storage molecular chains includes the one of the metal atoms surrounded by the first group of the carbon atoms and the some of the halogen atoms, and another one of charge-storage molecular chains includes the another one of the metal atoms surrounded by the second group of the carbon atoms.

21. The memory according to claim 14 , wherein the organic molecular layer further includes a plurality of charge-storage molecular chains, one of charge-storage molecular chains includes a linker, and the linker is positioned at a semiconductor layer-side.

22. The memory according to claim 14 , wherein the organic molecular layer further includes a plurality of charge-storage molecular chains, and one of charge-storage molecular chains includes a linker being chemically bound to the semiconductor layer.

23. The memory according to claim 14 , wherein the semiconductor layer is a silicon substrate.

24. The memory according to claim 15 , wherein the metal atoms are copper atoms.

25. An organic molecular memory comprising
a semiconductor layer;
an organic molecular layer formed above the semiconductor layer, the organic molecular layer including metal atoms, carbon atoms and halogen atoms, the metal atoms being distributed in the organic molecular layer, one of the metal atoms surrounded by first group of the carbon atoms and some of the halogen atoms, and another one of the metal atoms surrounded by second group of the carbon atoms;
an insulating layer formed above the organic layer; and
a gate electrode formed above the insulating layer,
wherein the metal atoms are atoms selected from the group of zinc atoms, iron atoms, cobalt atoms, nickel atoms, and copper atoms.

26. An organic molecular memory comprising
a semiconductor layer;
an organic molecular layer formed above the semiconductor layer, the organic molecular layer including metal atoms, carbon atoms and halogen atoms, the metal atoms being distributed in the organic molecular layer,

Assignees

• Toshiba Kk

Inventors

• Nishizawa Hideyuki
• Hattori Shigeki
• Terai Masaya
• Mikoshiba Satoshi
• Asakawa Koji
• Tada Tsukasa

Classifications

• G11C13/0016

  comprising polymers · CPC title

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• G11C2213/53

  Structure wherein the resistive material being in a transistor, e.g. gate · CPC title

• H10D30/69

  IGFETs having charge trapping gate insulators, e.g. MNOS transistors · CPC title

• G11C13/0014 Primary

  comprising cells based on organic memory material · CPC title