Semiconductor device and manufacturing method of semiconductor device using metal oxide

Patent metadata

Field	Value
Publication number	US-9515189-B2
Application number	US-201514879423-A
Country	US
Kind code	B2
Filing date	Oct 9, 2015
Priority date	Oct 25, 2012
Publication date	Dec 6, 2016
Grant date	Dec 6, 2016

Abstract

A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.

First claim

What is claimed is:

1. A semiconductor device comprising:
a polycrystalline semiconductor layer on a substrate, the polycrystalline semiconductor layer excluding a metal;
a metal silicide on a surface of the polycrystalline semiconductor layer; and
a metal oxide layer between the substrate and the polycrystalline semiconductor layer,
wherein the polycrystalline semiconductor layer has a (111) crystallization orientation during crystallization using the metal oxide layer and the polycrystalline semiconductor layer.

2. The semiconductor device of claim 1 , further comprising:
an insulating layer between the substrate and the polycrystalline semiconductor layer.

3. The semiconductor device of claim 1 , wherein the insulating layer is one of SiO 2 and SiN x , wherein 0<x<1.4.

4. The semiconductor device of claim 1 , wherein the substrate is one of a glass substrate and a silicon substrate.

5. The semiconductor device of claim 1 , wherein the metal oxide layer is one of NiO, CuO, ZnO, SnO, AlO x , TiO x , InO x , GaO x , PbO x , and CoO x .

6. The semiconductor device of claim 1 , wherein the polycrystalline semiconductor layer includes one of Si, Ge, and Si 1−x Ge x , wherein 0<x<1.

7. The semiconductor device of claim 1 , wherein the polycrystalline semiconductor layer excludes a metal silicide as part of the polycrystalline semiconductor layer.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Wenxu Xianyu
• Yang Woo-Young
• Moon Chang-Youl
• Park Yong-Young
• Lee Jeong-Yub

Classifications

• H10P14/3806

  using crystallisation-enhancing elements · CPC title

• H10P14/3456

  Polycrystalline · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/3238

  being insulating materials · CPC title

• H10P14/2922

  being non-crystalline insulating materials, e.g. glass or polymers · CPC title