Semiconductor device and method for fabricating the same
US-2015206874-A1 · Jul 23, 2015 · US
Asymmetric source/drain depths
US9515071B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9515071-B2 |
| Application number | US-201414582431-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 24, 2014 |
| Priority date | Dec 24, 2014 |
| Publication date | Dec 6, 2016 |
| Grant date | Dec 6, 2016 |
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Abstract
Official abstract text for this publication.
A semiconductor device includes a substrate having a first region and a second region, an n-type transistor in the first region, the n-type transistor comprising a first set of source/drain features, and a p-type transistor in the second region, the p-type transistor comprising a second set of source/drain features. The second set of source/drain features extend deeper than the first set of source/drain features.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device, comprising: a relaxed semiconductor layer on a substrate, the substrate comprising an n-type region and a p-type region; a tensile strained semiconductor layer on the relaxed semiconductor layer; a compressive strained semiconductor layer on the tensile strained semiconductor layer in the p-type region; a first gate in the n-type region and a second gate in the p-type region; and a first set of source/drain features adjacent t…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9515071B2 cover?
- A semiconductor device includes a substrate having a first region and a second region, an n-type transistor in the first region, the n-type transistor comprising a first set of source/drain features, and a p-type transistor in the second region, the p-type transistor comprising a second set of source/drain features. The second set of source/drain features extend deeper than the first set of sou…
- Who is the assignee on this patent?
- Taiwan Semiconductor Mfg Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D84/017. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Dec 06 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).