Bonding pads with thermal pathways

Patent metadata

Field	Value
Publication number	US-9515002-B2
Application number	US-201514617375-A
Country	US
Kind code	B2
Filing date	Feb 9, 2015
Priority date	Feb 9, 2015
Publication date	Dec 6, 2016
Grant date	Dec 6, 2016

Abstract

Apparatuses and methods for providing thermal pathways from a substrate to a thermal bonding pad. The thermal pathways may be metal extensions of the thermal bonding pad that are disposed in channels formed in a backside passivation layer underneath the thermal bonding pad, and may be in direct contact with an underlying substrate. The thermal pathways may provide improved thermal dissipation from the substrate.

First claim

What is claimed is:

1. An apparatus, comprising:
a substrate; and
an electrically-inactive bonding pad including thermally conductive pathways in direct contact with a backside of the substrate, wherein the thermally conductive pathways are disposed in channels formed in a backside passivation layer on the backside of the substrate.

2. The apparatus of claim 1 , wherein the substrate further includes a through-via formed through the substrate from a front side to the backside.

3. The apparatus of claim 2 , further comprising an electrically-active through via bonding pad with a conductor disposed through the through-via and the electrically-active through-via bonding pad disposed on the backside passivation layer.

4. The apparatus of claim 3 , wherein the electrically-active through-via bonding pad further includes thermal conductive pathways in direct contact with the backside of the substrate, and wherein the thermally conductive pathways are disposed in channels form in the backside passivation layer.

5. The apparatus of claim 4 , wherein the thermally conductive pathways are formed under the electrically-active through-via bonding pad.

6. The apparatus of claim 1 , wherein the thermally conductive pathways are formed under the electrically-inactive bonding pad.

7. The apparatus of claim 1 , wherein the thermally conductive pathways comprise a plurality of parallel lines.

8. An apparatus, comprising:
an electrically-active through-via conductor disposed through a substrate, the electrically-active through via conductor including a bonding pad and thermal pathways under the bonding pad in direct contact with a backside of the substrate.

9. The apparatus of claim 8 , wherein the thermal pathways include thermally conductive material disposed in channels formed in a backside passivation layer.

10. The apparatus of claim 8 , further comprising a thermal bonding pad formed on the backside of the substrate.

11. The apparatus of claim 10 , wherein the thermal bonding pad is formed on a backside passivation layer.

12. The apparatus of claim 11 , wherein the thermal bonding pad includes thermal pathways disposed in channels formed in the backside passivation layer and between the thermal bonding pad and the substrate.

13. The apparatus of claim 8 , wherein the thermal pathways comprise concentric circles under the bond pad of the electrically-active through-via conductor.

14. An apparatus, comprising:
a through-via conductor bonding pad and an electrically-inactive bonding pad, both formed on a substrate, wherein the through-via conductor bonding pad and the electrically-inactive bonding pad include thermal conductive extensions in direct contact with a surface of the substrate.

15. The apparatus of claim 14 , wherein the thermal conductive extensions in direct contact with the surface of the substrate are disposed within channels formed in a passivation layer on the substrate.

16. The apparatus of claim 14 , wherein the electrically-inactive bonding pad provides a thermal dissipation pathway for heat generated within the substrate.

17. The apparatus of claim 14 , wherein the thermal conductive extensions included with the electrically-inactive bonding pad are disposed between the electrically-inactive bonding pad and the substrate.

18. The apparatus of claim 14 , wherein the through-via conductor bonding pad and the electrically-inactive bonding pad are formed of the same material.

19. The apparatus of claim 14 , wherein the through-via conductor bonding pad and the electrically-inactive bonding pad are simultaneously fabricated.

20. The apparatus of claim 14 , wherein the through-via conductor bonding pad provides an electrically conductive pathway from a front of the substrate to a back of the substrate.

Assignees

• Micron Technology Inc

Inventors

• Gandhi Jaspreet S
• Derderian James M
• Vadhavkar Sameer S
• Li Jian

Classifications

• H10W90/722

  between stacked chips · CPC title

• H10W90/297

  characterised by the through-semiconductor vias [TSVs] in the stacked chips · CPC title

• H10W90/288

  characterised by arrangements for thermal management of the stacked chips · CPC title

• H10W72/01951

  Changing the shapes of bond pads · CPC title

• H10W72/967

  Multiple bond pads having different functions · CPC title