Semiconductor memory device
US-2024334693-A1 · Oct 3, 2024 · US
US9514945B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9514945-B2 |
| Application number | US-201414568155-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 12, 2014 |
| Priority date | Dec 12, 2014 |
| Publication date | Dec 6, 2016 |
| Grant date | Dec 6, 2016 |
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A charge-storing device includes a charge-storing layer including nanocrystals. The nanocrystals are formed by a deposition technique incorporating deuterated hydrides. The deuterated hydride can be used to form an amorphous semiconductor material that is annealed to form nanoparticles to be incorporated into the charge-storing layer.
Opening claim text (preview).
What is claimed is: 1. A method of making a charge storage device, the method comprising: depositing an amorphous semiconductor material over a dielectric layer using a deuterated hydride; annealing, in an inert atmosphere, the amorphous semiconductor material to form particles; and forming a dielectric material around the particles. 2. The method of claim 1 , wherein depositing includes depositing at a temperature in a range of 300° C. to 650° C.…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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