Nanocrystal memory and methods for forming same

US9514945B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9514945-B2
Application numberUS-201414568155-A
CountryUS
Kind codeB2
Filing dateDec 12, 2014
Priority dateDec 12, 2014
Publication dateDec 6, 2016
Grant dateDec 6, 2016

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Abstract

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A charge-storing device includes a charge-storing layer including nanocrystals. The nanocrystals are formed by a deposition technique incorporating deuterated hydrides. The deuterated hydride can be used to form an amorphous semiconductor material that is annealed to form nanoparticles to be incorporated into the charge-storing layer.

First claim

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What is claimed is: 1. A method of making a charge storage device, the method comprising: depositing an amorphous semiconductor material over a dielectric layer using a deuterated hydride; annealing, in an inert atmosphere, the amorphous semiconductor material to form particles; and forming a dielectric material around the particles. 2. The method of claim 1 , wherein depositing includes depositing at a temperature in a range of 300° C. to 650° C.…

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What does patent US9514945B2 cover?
A charge-storing device includes a charge-storing layer including nanocrystals. The nanocrystals are formed by a deposition technique incorporating deuterated hydrides. The deuterated hydride can be used to form an amorphous semiconductor material that is annealed to form nanoparticles to be incorporated into the charge-storing layer.
Who is the assignee on this patent?
Hong Cheong Min, Lee Euhngi, Freescale Semiconductor Inc
What technology area does this patent fall under?
Primary CPC classification H10D30/6892. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 06 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).