Chip form ultracapacitor
US-12165808-B2 · Dec 10, 2024 · US
US9514893B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9514893-B2 |
| Application number | US-201314109305-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 17, 2013 |
| Priority date | Jun 28, 2011 |
| Publication date | Dec 6, 2016 |
| Grant date | Dec 6, 2016 |
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An electrical storage unit that includes a positive electrode, which includes a positive-electrode collector electrode and a positive-electrode active material layer on the positive-electrode collector electrode, a negative electrode, which includes a negative-electrode collector electrode and a negative-electrode active material layer on the negative-electrode collector electrode, the negative-electrode active material layer facing the positive-electrode active material layer, and a first insulating layer bonded to the positive electrode and the negative electrode and separating the positive electrode from the negative electrode. The first insulating layer is bonded to part of a surface of the positive electrode and part of a surface of the negative electrode and includes a communication path for connecting the outside of the electrical storage unit to the inside of the electrical storage unit.
Opening claim text (preview).
The invention claimed is: 1. An electrical storage device, comprising: a positive electrode including a positive-electrode collector electrode and a positive-electrode active material layer disposed on the positive-electrode collector electrode; a negative electrode including a negative-electrode collector electrode and a negative-electrode active material layer disposed on the negative-electrode collector electrode such that the negative-electrode active material layer faces the positive-electrode active material layer; and a first insulating layer comprising a plurality of columns extending between the positive electrode and the negative electrode to insulate the positive electrode from the negative electrode, wherein the plurality of columns of the first insulating layer define a plurality of paths that extend around the plurality of columns and between a surface of the positive electrode and a surface of the negative electrode. 2. The electrical storage device according to claim 1 , wherein the plurality of paths provide communication paths between the surfaces of the positive and negative electrodes and the outside of the electrical storage device. 3. The electrical storage device according to claim 1 , wherein each of the plurality of paths has a width of at least 50 μm and at most 100 mm. 4. The electrical storage device according to claim 1 , wherein the first insulating layer comprises a particulate insulator. 5. The electrical storage device according to claim 1 , further comprising a porous second insulating layer surrounded by the positive electrode, the negative electrode, and the first insulating layer. 6. The electrical storage device according to claim 5 , wherein the second insulating layer has a lower air permeability than the first insulating layer. 7. The electrical storage device according to claim 1 , further comprising an electrolyte disposed in the plurality of paths. 8. The electrical storage device according to claim 1 , wherein the columns of the first insulating layer define a grid-like pattern that defines the plurality of paths interconnected to each other. 9. The electrical storage device according to claim 1 , wherein the first insulating layer is bonded to three sides of the positive-electrode active material layer and the negative-electrode active material layer, and wherein at least one path of the plurality of paths is disposed at a fourth side of the positive-electrode active material layer and the negative-electrode active material layer. 10. The electrical storage device according to claim 1 , wherein the first insulating layer comprises a pair of insulating layers disposed on respective sides of the positive-electrode active material layer and the negative-electrode active material layer. 11. The electrical storage device according to claim 1 , wherein the first insulating layer is bonded to side surfaces of the positive-electrode active material layer and the negative-electrode active material layer.
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