Zinc oxide precursor and method of depositing zinc oxide-based thin film using the same

Patent metadata

Field	Value
Publication number	US-9514857-B2
Application number	US-201314049352-A
Country	US
Kind code	B2
Filing date	Oct 9, 2013
Priority date	Oct 9, 2012
Publication date	Dec 6, 2016
Grant date	Dec 6, 2016

Abstract

A zinc oxide (ZnO) precursor and a method of depositing a ZnO-based thin film using the same, with which a high-quality and high-purity ZnO-based thin film can be deposited. The ZnO precursor includes a mixture solvent containing at least two organic solvents which are mixed and a source material comprising diethyl zinc or dimethyl zinc which is diluted in the mixture solvent.

First claim

What is claimed is:

1. A method of depositing a zinc oxide-based thin film on a substrate by chemical vapor deposition, comprising depositing the zinc oxide-based thin film using a zinc oxide precursor and an oxidizer, the zinc oxide precursor comprising:
a mixture solvent comprising at least two organic solvents which are mixed; and
a zinc oxide precursor source material which is diluted in the mixture solvent,
wherein a ratio of the at least two organic solvents is set to be such that a vapor pressure of the mixture solvent is substantially identical to a vapor pressure of the zinc oxide precursor source material.

2. The method of claim 1 , wherein the organic solvents comprise paraffin-based hydrocarbon expressed by a formula C n H 2n+2 or cyclo-paraffin-based hydrocarbon expressed by a formula C n H 2n , where n is a number in a range from 5 to 12.

3. The method of claim 2 , wherein the organic solvents comprise octane and one of heptane, hexane and pentane.

4. The method of claim 1 , wherein the chemical vapor deposition comprises controlling the vapor pressure of the zinc oxide precursor source material to be in a range from 95 to 99% of the vapor pressure of the mixture solvent.

5. The method of claim 1 , wherein the chemical vapor deposition comprises atmospheric pressure chemical vapor deposition.

6. The method of claim 1 , wherein the chemical vapor deposition comprises vaporizing the zinc oxide precursor, and supplying a vaporized gas of the zinc oxide precursor into a deposition chamber in which the substrate is placed.

7. The method of claim 6 , vaporizing the zinc oxide precursor comprises blowing a gas into the zinc oxide precursor.

8. The method of claim 6 , wherein the zinc oxide precursor is carried by a carrier gas into the deposition chamber, the carrier gas comprising an inert gas.

9. The method of claim 1 , wherein the oxidizer comprises at least one selected from the group consisting of oxygen gas, ozone gas, nitrogen oxide gas, water vapor and alcohol vapor.

10. The method of claim 1 , wherein the chemical vapor deposition comprises doping the zinc oxide-based thin film with a dopant.

11. The method of claim 1 , wherein the substrate comprises one selected from the group consisting of a Si substrate, a sapphire substrate, a ceramic substrate, a glass substrate, a metal oxide substrate and a metal substrate.

12. The method of claim 1 , wherein the zinc oxide precursor source material comprises diethyl zinc or dimethyl zinc.

13. The method of claim 1 , wherein a content of the zinc oxide precursor source material ranges from 0.1 to 2 mol/L.

Assignees

• Samsung Corning Prec Mat Co Ltd
• Corning Prec Materials Co Ltd

Inventors

• Park Sooho
• Park Jongse
• Yoo Young Zo
• Lee Joo Young
• Kim Seo Hyun
• Yoon Gun Sang
• Kim Myong Woon
• Shin Hyung Soo
• Yoo Seung Ho
• Lee Sang Do
• Lee Sang Ick
• Yim Sang Jun

Classifications

• H10P14/3426

  Oxides · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H01B1/08 Primary

  oxides · CPC title

• C23C16/448

  characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials · CPC title

• C03C2217/216

  ZnO · CPC title