Scissor type magnetic sensor with high magnetic moment bias structure for reduced signal asymmetry

US9513349B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9513349-B2
Application numberUS-201414174776-A
CountryUS
Kind codeB2
Filing dateFeb 6, 2014
Priority dateFeb 6, 2014
Publication dateDec 6, 2016
Grant dateDec 6, 2016

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A scissor type magnetic sensor having a magnetic bias structure extending from the back edge of first and second magnetic free layers. The magnetic bias structure is constructed of a magnetic material having a high magnetic moment, such as NiFe with a high Fe content or CoFe. The high magnetic moment bias structure reduces magnetic signal asymmetry while also maintaining high signal amplitude.

First claim

Opening claim text (preview).

What is claimed is: 1. A magnetic sensor, comprising: first and second free magnetic layers that are anti-parallel coupled with one another by a non-magnetic anti-parallel coupling layer sandwiched between the first and second free magnetic layers, the first and second free magnetic layers each having a front edge located at a media facing surface and a back edge opposite the front edge; and a magnetic bias layer located adjacent to the back edge of the first and second free magnetic layers and extending in a direction away from the media facing surface, the magnetic bias layer comprising a material having a high magnetic moment; wherein the magnetic bias layer is formed entirely of NiFe having an Fe content greater than 40 atomic percent, but not greater than 60 atomic percent; and wherein the first and second free magnetic layers and the non-magnetic anti-parallel coupling layer have first and second laterally opposed sides, the magnetic sensor further comprising first and second soft magnetic side shield structures extending from each of the first and second sides of the first and second magnetic free layers and non-magnetic anti-parallel coupling layer. 2. The magnetic sensor as in claim 1 , wherein the magnetic bias layer has a magnetic moment of at least one Tesla. 3. The magnetic sensor as in claim 1 , wherein the magnetic bias layer comprises NiFe having an Fe content of 50-60 atomic percent. 4. The magnetic sensor as in claim 1 , wherein the magnetic bias layer has a magnetic moment of at least 1.6 Tesla. 5. The magnetic sensor as in claim 1 , further comprising, a non-magnetic, electrically insulting layer separating the magnetic bias layer from the first and second free magnetic layers and the non-magnetic anti-parallel coupling layer. 6. The magnetic sensor as in claim 1 , wherein the first and second soft magnetic side shield structures each include first and second anti-parallel coupled soft magnetic layers. 7. The magnetic sensor as in claim 6 , wherein the soft magnetic side shield structures are separated from the first and second magnetic free layers and anti-parallel coupling layer by a non-magnetic, electrically insulating layer. 8. The magnetic sensor as in claim 1 , wherein the magnetic sensor is a scissor type magnetic sensor. 9. The magnetic sensor as in claim 1 , further comprising a layer of anti-ferromagnetic material exchange coupled with the magnetic bias layer. 10. The magnetic sensor as in claim 1 , wherein the layer of anti-ferromagnetic material is exchange coupled with a bottom surface of the magnetic bias layer. 11. The magnetic sensor as in claim 1 , wherein the layer of anti-ferromagnetic material is exchange coupled with an upper surface of the magnetic bias layer. 12. The magnetic sensor as in claim 1 , wherein the magnetic bias layer has a length measured perpendicular to the back edge of the first and second magnetic free layers, the magnetic bias layer has a width measured parallel with the back edge of the first and second magnetic free layers and wherein the length is larger than the width so as to create a shape enhanced magnetic anisotropy in the magnetic bias layer that is oriented perpendicular to the back edge of the first and second magnetic free layers. 13. A magnetic data recording system, comprising: a magnetic head; a mechanism for moving a magnetic media relative to the magnetic head; and a magnetic sensor formed on the magnetic head, the magnetic sensor further comprising: first and second free magnetic layers that are anti-parallel coupled with one another by a non-magnetic anti-parallel coupling layer sandwiched between the first and second free magnetic layers, the first and second free magnetic layers each having a front edge located at a media facing surface and a back edge opposite the front edge; and a magnetic bias layer located adjacent to the back edge of the first and second free magnetic layers and extending in a direction away from the media facing surface, the magnetic bias layer comprising a material having a high magnetic moment; wherein the magnetic bias layer is formed entirely of NiFe having an Fe content greater than 40 atomic percent, but not greater than 60 atomic percent; and wherein the first and second free magnetic layers and the non-magnetic anti-parallel coupling layer have first and second laterally opposed sides, the magnetic sensor further comprising first and second soft magnetic side shield structures extending from each of the first and second sides of the first and second magnetic free layers and non-magnetic anti-parallel coupling layer. 14. The magnetic sensor as in claim 13 , wherein the magnetic bias layer has a magnetic moment of at least one Tesla. 15. The magnetic sensor as in claim 13 , wherein the magnetic bias layer comprises NiFe having an Fe content of 50-60 atomic percent. 16. The magnetic sensor as in claim 13 , wherein the magnetic bias layer has a magnetic moment of at least 1.6 Tesla.

Assignees

Inventors

Classifications

  • large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices · CPC title

  • Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields (G11B5/3916 takes precedence) · CPC title

  • Magnetic biasing films · CPC title

  • G01R33/098Primary

    comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title

  • Specially shaped layers · CPC title

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What does patent US9513349B2 cover?
A scissor type magnetic sensor having a magnetic bias structure extending from the back edge of first and second magnetic free layers. The magnetic bias structure is constructed of a magnetic material having a high magnetic moment, such as NiFe with a high Fe content or CoFe. The high magnetic moment bias structure reduces magnetic signal asymmetry while also maintaining high signal amplitude.
Who is the assignee on this patent?
HGST Netherlands BV
What technology area does this patent fall under?
Primary CPC classification G01R33/098. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Dec 06 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).