Process for preparing red-emitting phosphors

US9512356B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9512356-B2
Application numberUS-201414267434-A
CountryUS
Kind codeB2
Filing dateMay 1, 2014
Priority dateMay 1, 2014
Publication dateDec 6, 2016
Grant dateDec 6, 2016

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Abstract

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A process for preparing a Mn 4+ doped phosphor of formula I A x [MF y ]:Mn +4    I includes combining in an acidic solution, an A + cation, an anion of formula MF y , and a Mn n+ source comprising a fluoromanganese compound, precipitating a Mn n+ containing phosphor precursor from the acidic solution, and contacting the Mn n+ containing phosphor precursor with a fluorine-containing oxidizing agent in gaseous form, at an elevated temperature, to form the Mn 4+ doped phosphor; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7; and n is 2 or 3.

First claim

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The invention claimed is: 1. A process for preparing a Mn 4+ doped phosphor of formula I, A x [MF y ]:Mn +4    I the process comprising combining an A + cation, an anion of formula MF y , and a Mn n+ source comprising a fluoromanganese compound in an acidic solution; precipitating a Mn n+ containing phosphor precursor from the acidic solution; and contacting the Mn n+ containing phosphor precursor with a fluorine-containing oxidizing agent in gaseous form, at an elevated temperature, to form the Mn 4+ doped phosphor; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is 1, 2, or 3, and is the absolute value of the charge of the [MF y ] ion; y is 5, 6 or 7; and n is 2 or 3. 2. A process according to claim 1 , additionally comprising combining a fluoride or bifluoride anion, or a combination thereof, with the A+ cation, the anion of formula MF y , and the Mn n+ source. 3. A process according to claim 1 , wherein the Mn 4+ doped phosphor is K 2 SiF 6 :Mn 4+ . 4. A process according to claim 1 , wherein the anion of formula [MF y ] is SiF 6 . 5. A process according to claim 1 , wherein the A+ cation is derived from KF, KHF 2 , or a combination thereof. 6. A process according to claim 1 , wherein the Mn n+ source is selected from K 2 MnF 5 .H 2 O, KMnF 4 , K 2 MnF 4 , KMnF 3 , MnF 2 , MnF 3 , and combinations thereof. 7. A process according to claim 1 , wherein the Mn n+ source is K 2 MnF 5 .H 2 O. 8. A process according to claim 1 , wherein the acidic solution is aqueous fluorosilicic acid. 9. A process according to claim 1 , wherein the fluorine-containing oxidizing agent is F 2 . 10. A process according to claim 1 , wherein the step of contacting the Mn n+ containing phosphor precursor with the fluorine-containing oxidizing agent additionally comprises contacting the Mn n+ containing phosphor precursor with the fluorine-containing oxidizing agent and a compound of formula AX, where X is F, Cl, Br, I, HF 2 , or a combination thereof. 11. A process according to claim 1 , comprising combining a solution comprising fluorosilicic acid and the Mn n+ source with a potassium fluoride compound selected from KF, KHF 2 , and combinations thereof; precipitating a Mn n+ containing phosphor precursor; and exposing the Mn n+ containing phosphor precursor to an atmosphere comprising at least 20% fluorine gas at an elevated temperature, to form the Mn 4+ doped phosphor; wherein the Mn n+ source comprises a potassium fluoromanganese compound selected from K 2 MnF 5 .H 2 O, KMnF 4 , MnF 3 , and combinations thereof. 12. A process according to claim 1 , treating the phosphor in particulate form with a saturated solution of a composition of formula II in aqueous hydrofluoric acid A x [MF y ]   II. 13. A process for preparing a Mn 4+ doped phosphor, the process comprising combining an A + cation, an anion of formula MF y , and a Mn n+ source comprising a fluoromanganese compound in an acidic solution; precipitating a Mn n+ containing phosphor precursor from the acidic solution; and contacting the Mn n+ containing phosphor precursor with a fluorine-containing oxidizing agent in gaseous form, at an elevated temperature, to form the Mn 4+ doped phosphor; wherein the Mn 4+ doped phosphor is selected from the group consisting of (A) A 2 [MF 5 ]:Mn 4+ , where M is selected from Al, Ga, In, and combinations thereof; (B) A 3 [MF 6 ]:Mn 4+ , where M is selected from Al, Ga, In, and combinations thereof; (C) Zn 2 [MF 7 ]:Mn 4+ , where M is selected from Al, Ga, In, and combinations thereof; (D) A[In 2 F 7 ]:Mn 4+ ; (E) A 2 [MF 6 ]:Mn 4+ , where M is selected from Ge, Si, Sn, Ti, Zr, and combinations thereof; (F) E[MF 6 ]:Mn 4+ , where E is selected from Mg, Ca, Sr, Ba, Zn, and combinations thereof; and where M is selected from Ge, Si, Sn, Ti, Zr, and combinations thereof; (G) Ba 0.65 Zr 0.35 F 2.70 :Mn 4+ ; and (H) A 3 [ZrF 7 ]:Mn 4+ ; and A is Li, Na, K, Rb, Cs, or a combination thereof. 14. A process according to claim 13 , wherein the acidic solution is aqueous fluorosilicic acid. 15. A process according to claim 13 , wherein the fluorine-containing oxidizing agent is F 2 .

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Classifications

  • Encapsulations, e.g. protective coatings · CPC title

  • C09K11/617Primary

    Silicates · CPC title

  • Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps · CPC title

  • not being in contact with the bodies · CPC title

  • Wavelength conversion materials · CPC title

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What does patent US9512356B2 cover?
A process for preparing a Mn 4+ doped phosphor of formula I A x [MF y ]:Mn +4    I includes combining in an acidic solution, an A + cation, an anion of formula MF y , and a Mn n+ source comprising a fluoromanganese compound, precipitating a Mn n+ containing phosphor precursor from the acidic solution, and contacting the Mn n+ containing phosphor precursor with a fluorine-containing oxi…
Who is the assignee on this patent?
Gen Electric
What technology area does this patent fall under?
Primary CPC classification C09K11/617. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Dec 06 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).