Modified polysilazane film and method for producing gas barrier film

Patent metadata

Field	Value
Publication number	US-9512334-B2
Application number	US-201214126129-A
Country	US
Kind code	B2
Filing date	Jul 12, 2012
Priority date	Sep 8, 2011
Publication date	Dec 6, 2016
Grant date	Dec 6, 2016

Abstract

Provided are a modified polysilazane film that is preferable as an intermediate material for forming a predetermined gas barrier film, and a method for producing a gas barrier film having excellent gas barrier properties using such modified polysilazane film as an intermediate material. A modified polysilazane film comprising a substrate and a modified polysilazane layer formed thereon, and a method for producing a gas barrier film obtained through such intermediate material, wherein the modified polysilazane layer has a thickness of a value in the range of 10 to 500 nm, and the modified polysilazane layer has a refractive index of a value in the range of 1.48 to 1.63.

First claim

What is claimed is:

1. A method for producing a gas barrier film using a modified polysilazane film comprising a substrate and a modified polysilazane layer formed thereon, comprising the following steps (1) to (3):
(1) a polysilazane layer forming step, comprising forming a polysilazane layer on the substrate, wherein a composition used for forming the polysilazane layer comprises a polysilazane compound having a repeating unit represented by the following general formula (1):

wherein in the general formula (1), Rx, Ry and Rz each independently represents a hydrogen atom, or a non-hydrolysable group selected from the group consisting of an alkyl group being unsubstituted or having at least one substituent, a cycloalkyl group being unsubstituted or having at least one substituent, an alkenyl group being unsubstituted or having at least one substituent, an aryl group being unsubstituted or having at least one substituent, and an alkylsilyl group, and the subscript n represents an arbitrary natural number;
(2) an intermediate treatment step, comprising heat-treating the polysilazane layer obtained in step (1) and then air-conditioning-treating the polysilazane layer at a temperature below that of the heat-treating to form the modified polysilazane layer having a thickness of a value in the range of 10 to 500 nm, a refractive index of a value in the range of 1.50 to 1.58, and an oxygen amount measured by X-ray Photoelectron Spectroscopy of a value in the range of 30 to 58 mol % with respect to the overall amount, taken as 100 mol %, wherein the overall amount is the total amount of the silicon amount, oxygen amount and nitrogen amount, to thereby give the modified polysilazane film as an intermediate material, wherein conditions for the heat treatment of the polysilazane layer include a heating temperature of 60 to 140° C. and a heat treatment time of a value in the range of 30 seconds to 60 minutes, and conditions for the air-conditioning treatment include leaving the polysilazane layer on the substrate under atmospheric conditions at a temperature of 15 to 35° C. under a relative humidity of 40 to 60% for 24 hours to 10 days; and
(3) a plasma ion implantation step, comprising conducting a plasma ion implantation process into the modified polysilazane layer of the modified polysilazane film obtained in step (2) to form the modified polysilazane layer into a gas barrier layer to thereby give the gas barrier film comprising the substrate and the gas barrier layer formed thereon, wherein the plasma ion implantation process comprises generating plasma in an atmosphere containing a plasma generating gas, and applying a plasma ion implantation pressure adjusted to a value within the range of 0.01 Pa to 1 Pa and a negative high voltage pulse with an applied voltage adjusted to a value within the range of −1 kV to −50 kV.

2. The method for producing the gas barrier film according to claim 1 , wherein oxygen, nitrogen, helium, argon, neon or krypton is used as the plasma ion in the step (3).

3. The method for producing the gas barrier film according to claim 1 , wherein the modified polysilazane layer has the nitrogen amount measured by X-ray Photoelectron Spectroscopy of a value in the range of 7 to 20 mol % with respect to the overall amount, taken as 100 mol %, wherein the overall amount is the total amount of the silicon amount, oxygen amount and nitrogen amount.

4. The method for producing the gas barrier film according to claim 1 , wherein the modified polysilazane layer has the silicon amount measured by X-ray Photoelectron Spectroscopy of a value in the range of 34 to 42 mol % with respect to the overall amount, taken as 100 mol %, wherein the overall amount is the total amount of the silicon amount, oxygen amount and nitrogen amount.

5. The method for producing a gas barrier film according to claim 1 , wherein the polysilazane layer contains a perhydropolysilazane as a polysilazane compound.

6. The method for producing the gas barrier film according to claim 1 , wherein the refractive index of the modified polysilazane layer is in the range of 1.50 to 1.55.

7. The method for producing the gas barrier film according to claim 1 , wherein the substrate comprises at least one film selected from the group consisting of a thermoplastic resin film, a thermosetting resin film, and a photocured resin film.

8. The method for producing the gas barrier film according to claim 1 , wherein the substrate comprises at least one film selected from the group consisting of a polyester film, a polyamide film, a polysulfone film, a polyethersulfone film, a polyphenylenesulfide film, a polyarylate film, and a cycloolefin polymer film.

9. The method for producing the gas barrier film according to claim 1 , wherein the plasma ion implantation pressure is adjusted within the range of 0.02 Pa to 0.8 Pa.

10. The method for producing the gas barrier film according to claim 1 , wherein the plasma ion implantation pressure is adjusted within the range of 0.03 Pa to 0.6 Pa.

11. The method for producing the gas barrier film according to claim 1 , wherein the applied voltage is adjusted within the range of −1 kV to −30 kV.

12. The method for producing the gas barrier film according to claim 1 , wherein the applied voltage is adjusted within the range of −5 kV to −20 kV.

13. The method for producing the gas barrier film according to claim 1 , wherein the gas barrier film has a yellowness index (YI) adjusted to a value of 0.96 to 1.93.

14. The method for producing the gas barrier film according to claim 1 , wherein the gas barrier film has a b* value adjusted to a value of 0.43 to 1.02.

Assignees

• Naganawa Satoshi
• Suzuki Yuta
• Lintec Corp

Inventors

• Naganawa Satoshi
• Suzuki Yuta

Classifications

• C08J7/0427

  with only one layer of a composition containing a polymer binder (with more layers C08J7/042) · CPC title

• H01J2237/3382

  Polymerising · CPC title

• C08J2483/16

  in which all the silicon atoms are connected by linkages other than oxygen atoms · CPC title

• Y10T428/265

  1 mil or less · CPC title

• C08J7/042

  with two or more layers, where at least one layer of a composition contains a polymer binder · CPC title