Organic light-emitting diode (OLED) device, manufacturing method thereof and display device

Patent metadata

Field	Value
Publication number	US-9508933-B2
Application number	US-201414768524-A
Country	US
Kind code	B2
Filing date	Dec 17, 2014
Priority date	Sep 15, 2014
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

A method for manufacturing an organic light-emitting diode (OLED) device includes: forming auxiliary electrodes ( 2 ) on a resin layer ( 1 ) of an OLED substrate; forming a gas generation layer ( 4 ) on the auxiliary electrodes ( 2 ); forming an organic light-emitting layer ( 6 ) on the gas generation layer ( 4 ); placing a receptor substrate ( 12 ) on the organic light-emitting layer ( 6 ) and scanning auxiliary electrode regions ( 22 ) by laser, so that the gas generation layer ( 4 ) is decomposed under laser irradiation to release gas, and hence the organic light-emitting layer ( 6 ) in the auxiliary electrode regions ( 22 ) is transferred to the receptor substrate ( 12 ); removing the receptor substrate ( 12 ); and forming a cathode ( 7 ) on the auxiliary electrodes. The manufacturing process can effectively reduce poor contact between the auxiliary electrodes and the cathode.

First claim

The invention claimed is:

1. A method for manufacturing an organic light-emitting diode (OLED) device, comprising:
forming auxiliary electrodes on a resin layer of an OLED substrate;
forming a gas generation layer on the auxiliary electrodes;
forming an organic light-emitting layer on the gas generation layer;
placing a receptor substrate on the organic light-emitting layer and scanning auxiliary electrode regions by laser, so that the gas generation layer is decomposed under laser irradiation to release gas, and hence the organic light-emitting layer in the auxiliary electrode regions is transferred to the receptor substrate;
removing the receptor substrate; and
forming a cathode on the auxiliary electrodes.

2. The method according to claim 1 , wherein the gas generation layer is made of a material capable of releasing gas under laser excitation.

3. The method according to claim 2 , wherein the material capable of releasing the gas comprises gallium nitride (GaN), aluminum nitride (AlN), pentaerythritol tetranitrate (PETN) or trinitrotoluene (TNT).

4. The method according to claim 1 , wherein a thickness of the gas generation layer is from 10 nm to 100 μm.

5. The method according to claim 4 , wherein a thickness of the gas generation layer is from 200 to 500 nm.

6. The method according to claim 1 , further comprising: forming a photothermal conversion layer between the auxiliary electrodes and the gas generation layer.

7. The method according to claim 6 , wherein the photothermal conversion layer is formed of a light-absorbing material.

8. The method according to claim 7 , wherein the light-absorbing material comprises an organic film, a metal oxide, a metal sulfide or any composition thereof.

9. The method according to claim 1 , further comprising:
forming a buffer layer between the gas generation layer and the organic light-emitting layer, in which the buffer layer is configured to control the adhesion between the gas generation layer and the organic light-emitting layer.

10. The method according to claim 9 , wherein the buffer layer is formed of an organic matter or a metal oxide.

11. The method according to claim 1 , further comprising:
forming an anode on the resin layer and forming a pixel define layer (PDL) structure provided with pixel regions and the auxiliary electrode regions.

12. The method according to claim 11 , wherein
the PDL structure is formed before the auxiliary electrodes are formed, or the PDL structure is formed after the auxiliary electrodes are formed.

13. The method according to claim 11 , further comprising:
forming the organic light-emitting layer on the anode and the PDL structure and at the same time forming the organic light-emitting layer on the gas generation layer.

14. The method according to claim 11 , before the auxiliary electrodes, the anode and the PDL structure are formed, further comprising:
forming gate electrodes, a gate insulating layer, active layers, an etch barrier layer, a passivation layer and the resin layer on a glass substrate.

15. The method according to claim 1 , further comprising:
forming the cathode on the organic light-emitting layer and at the same time forming the cathode on the auxiliary electrodes.

16. An organic light-emitting diode (OLED) device manufactured by the method according to claim 1 .

17. A display device, comprising the OLED device according to claim 16 .

18. The method according to claim 12 , further comprising:
forming the organic light-emitting layer on the anode and the PDL structure and at the same time forming the organic light-emitting layer on the gas generation layer.

19. The method according to claim 9 , further comprising:
forming an anode on the resin layer and forming a pixel define layer (PDL) structure provided with pixel regions and the auxiliary electrode regions.

20. The method according to claim 9 , further comprising:
forming the cathode on the organic light-emitting layer and at the same time forming the cathode on the auxiliary electrodes.

Assignees

• Boe Technology Group Co Ltd

Inventors

• Wang Huifeng

Classifications

• H10K59/80522 Primary

  combined with auxiliary electrodes · CPC title

• H10K71/811

  Controlling the atmosphere during processing (H10K71/40 takes precedence) · CPC title

• H10K71/211 Primary

  by selective transformation of an existing layer · CPC title

• H01L2251/5315

  Electricity · mapped topic

• H01L2251/558

  Electricity · mapped topic