Phase change memory cell
US-9349951-B2 · May 24, 2016 · US
US9508929B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9508929-B2 |
| Application number | US-201414583799-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 29, 2014 |
| Priority date | Jan 15, 2014 |
| Publication date | Nov 29, 2016 |
| Grant date | Nov 29, 2016 |
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A method for making phase change memory cell includes following steps. A carbon nanotube wire is located on a surface of the substrate, wherein the carbon nanotube wire includes a first end and a second end opposite to the first end. A bending portion is formed by bending the carbon nanotube wire. A first electrode, a second electrode, and a third electrode are applied on the surface of the substrate, wherein the first electrode is electrically connected to the first end, the second electrode is electrically connected to the second end, and the third end is spaced from the bending portion of the carbon nanotube wire. A phase change layer is deposited to cover the bending structure and electrically connects to the third electrode.
Opening claim text (preview).
What is claimed is: 1. A method for making phase change memory cell, the method comprising: locating a carbon nanotube wire on a surface of a substrate, wherein the carbon nanotube wire comprises a first end and a second end opposite to the first end; forming a bending portion by bending the carbon nanotube wire; applying a first electrode, a second electrode, and a third electrode on the surface of the substrate, wherein the first electrode is electrically connected to the fi…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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