Method for making phase change memory cell

US9508929B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9508929-B2
Application numberUS-201414583799-A
CountryUS
Kind codeB2
Filing dateDec 29, 2014
Priority dateJan 15, 2014
Publication dateNov 29, 2016
Grant dateNov 29, 2016

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A method for making phase change memory cell includes following steps. A carbon nanotube wire is located on a surface of the substrate, wherein the carbon nanotube wire includes a first end and a second end opposite to the first end. A bending portion is formed by bending the carbon nanotube wire. A first electrode, a second electrode, and a third electrode are applied on the surface of the substrate, wherein the first electrode is electrically connected to the first end, the second electrode is electrically connected to the second end, and the third end is spaced from the bending portion of the carbon nanotube wire. A phase change layer is deposited to cover the bending structure and electrically connects to the third electrode.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for making phase change memory cell, the method comprising: locating a carbon nanotube wire on a surface of a substrate, wherein the carbon nanotube wire comprises a first end and a second end opposite to the first end; forming a bending portion by bending the carbon nanotube wire; applying a first electrode, a second electrode, and a third electrode on the surface of the substrate, wherein the first electrode is electrically connected to the fi…

Assignees

Inventors

Classifications

Patent family

Related publications grouped by family.

External sources

Next steps

Free tools are coming soon. Tell us what you want to track and we'll notify you.

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US9508929B2 cover?
A method for making phase change memory cell includes following steps. A carbon nanotube wire is located on a surface of the substrate, wherein the carbon nanotube wire includes a first end and a second end opposite to the first end. A bending portion is formed by bending the carbon nanotube wire. A first electrode, a second electrode, and a third electrode are applied on the surface of the sub…
Who is the assignee on this patent?
Univ Tsinghua, Hon Hai Prec Ind Co Ltd
What technology area does this patent fall under?
Primary CPC classification H01L45/126. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Nov 29 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).