Magnetic memory using spin orbit interaction
US-9082497-B2 · Jul 14, 2015 · US
Magnetic memory using spin orbit interaction
US9508923B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9508923-B2 |
| Application number | US-201514729142-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 3, 2015 |
| Priority date | Mar 22, 2011 |
| Publication date | Nov 29, 2016 |
| Grant date | Nov 29, 2016 |
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Abstract
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A magnetic memory includes: a base layer; a magnetization free layer; a barrier layer; and a magnetization reference layer. The magnetization free layer, with which the base layer is covered, has invertible magnetization and is magnetized approximately uniformly. The barrier layer, with which the magnetization free layer is covered, is composed of material different from material of the base layer. The magnetization reference layer is arranged on the barrier layer and has a fixed magnetization. When the magnetization of the magnetization free layer is inverted, a first writing current is made to flow from one end to the other end of the magnetization free layer in an in-plane direction without through the magnetization reference layer.
First claim
Opening claim text (preview).
The invention claimed is: 1. A magnetic memory comprising: a base layer; a magnetization free layer formed over the base layer, configured to have invertible magnetization and be magnetized approximately uniformly; a barrier layer formed over the magnetization free layer; and a magnetization reference layer formed over the barrier layer and having fixed magnetization, wherein when the magnetization of the magnetization free layer is inverted, a first writing current is mad…
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Physics · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01L43/08Primary
Electricity · mapped topic
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- What does patent US9508923B2 cover?
- A magnetic memory includes: a base layer; a magnetization free layer; a barrier layer; and a magnetization reference layer. The magnetization free layer, with which the base layer is covered, has invertible magnetization and is magnetized approximately uniformly. The barrier layer, with which the magnetization free layer is covered, is composed of material different from material of the base la…
- Who is the assignee on this patent?
- Renesas Electronics Corp
- What technology area does this patent fall under?
- Primary CPC classification H01L43/08. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 29 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).