Magnetic memory device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9508922-B2
Application number	US-201514642506-A
Country	US
Kind code	B2
Filing date	Mar 9, 2015
Priority date	Sep 8, 2014
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

According to one embodiment, a magnetic memory device includes a first stack structure including a first magnetic layer, and a first nonmagnetic layer provided on the first magnetic layer, a second stack structure including a second magnetic layer provided on the first nonmagnetic layer, a second nonmagnetic layer provided on the second magnetic layer, and a top conductive layer provided on the second nonmagnetic layer, and a sidewall conductive layer provided on a sidewall of the second stack structure.

First claim

What is claimed is:

1. A magnetic memory device comprising:
a first stack structure including a first magnetic layer, and a first nonmagnetic layer provided on the first magnetic layer;
a second stack structure including a second magnetic layer provided on the first nonmagnetic layer, a second nonmagnetic layer provided on the second magnetic layer, and a top conductive layer provided on the second nonmagnetic layer; and
a sidewall conductive layer provided on a sidewall of the second stack structure, wherein the sidewall conductive layer is not provided on a sidewall of the first stack structure.

2. The device of claim 1 , wherein the first magnetic layer has a fixed magnetization, and the second magnetic layer has a variable magnetization.

3. The device of claim 1 , wherein the sidewall conductive layer electrically connects the second magnetic layer to the top conductive layer.

4. The device of claim 1 , wherein the sidewall conductive layer contains a metal element contained in the second stack structure.

5. The device of claim 1 , wherein the sidewall conductive layer contains a metal element contained in the first nonmagnetic layer.

6. The device of claim 1 , wherein the first stack structure includes a portion positioned outside the second stack structure when viewed from a direction parallel to a stack direction of the first stack structure and the second stack structure.

7. The device of claim 1 , wherein the first stack structure includes a portion positioned outside the second stack structure and the sidewall conductive layer when viewed from a direction parallel to a stack direction of the first stack structure and the second stack structure.

8. The device of claim 1 , further comprising a sidewall insulating film provided on a sidewall of the sidewall conductive layer.

9. The device of claim 1 , wherein:
the first stack structure further includes a third magnetic layer; and
the first magnetic layer is provided on the third magnetic layer.

10. The device of claim 1 , further comprising a hard mask layer provided on the top conductive layer.

11. A method of manufacturing a magnetic memory device, comprising:
forming a first stack film including a first magnetic layer and a first nonmagnetic layer provided on the first magnetic layer;
forming a second stack film including a second magnetic layer provided on the first nonmagnetic layer, a second nonmagnetic layer provided on the second magnetic layer and a top conductive layer provided on the second nonmagnetic layer; and
etching the second stack film to form a second stack structure;
forming a sidewall conductive layer on a sidewall of the second stack structure; and
etching the first stack film to form a first stack structure,
wherein the sidewall conductive layer is formed on the sidewall of the second stack structure, and is not formed on a sidewall of the first stack structure.

12. The method of claim 11 , wherein the first magnetic layer has a fixed magnetization, and the second magnetic layer has a variable magnetization.

13. The method of claim 11 , wherein the sidewall conductive layer electrically connects the second magnetic layer to the top conductive layer.

14. The method of claim 11 , wherein:
the forming the sidewall conductive layer on the sidewall of the second stack structure is performed in parallel with the etching the second stack film to form the second stack structure; and
the sidewall conductive layer is formed of a conductive material generated by etching the second stack film.

15. The method of claim 14 , wherein the sidewall conductive layer contains a metal element contained in the second stack structure.

16. The method of claim 11 , wherein the forming the sidewall conductive layer on the sidewall of the second stack structure includes:
forming a conductive layer on an upper surface and the sidewall of the second stack structure; and
removing a portion of the conductive layer formed on the upper surface of the second stack structure to leave a portion of the conductive layer formed on the sidewall of the second stack structure.

17. The method of claim 16 , wherein the sidewall conductive layer contains a metal element contained in the first nonmagnetic layer.

18. The method of claim 11 , wherein the etching the second stack film is performed by IBE.

19. The method of claim 11 , wherein the etching the second stack film is performed using, as an etching mask, a hard mask layer provided on the top conductive layer.

20. The method of claim 11 , wherein the forming the first stack structure includes:
forming a sidewall insulating film on a sidewall of the sidewall conductive layer; and
etching the first stack film using, as masks, the second stack structure, the sidewall conductive layer and the sidewall insulating film.

21. The method of claim 11 , wherein the first stack structure includes a portion positioned outside the second stack structure when viewed from a direction parallel to a stack direction of the first stack structure and the second stack structure.

22. The method of claim 11 , wherein the first stack structure includes a portion positioned outside the second stack structure and the sidewall conductive layer when viewed from a direction parallel to a stack direction of the first stack structure and the second stack structure.

23. The method of claim 11 , wherein:
the first stack film further includes a third magnetic layer; and
the first magnetic layer is provided on the third magnetic layer.

24. The device of claim 1 , wherein the top conductive layer is not a magnetic layer.

25. The method of claim 11 , wherein the top conductive layer is not a magnetic layer.

Assignees

• Yoshikawa Masatoshi
• Seto Satoshi
• Tsubata Shuichi
• Tomioka Kazuhiro
• Toshiba Kk

Inventors

• Yoshikawa Masatoshi
• Seto Satoshi
• Tsubata Shuichi
• Tomioka Kazuhiro

Classifications

• H01L43/02

  Electricity · mapped topic

• H01L43/08 Primary

  Electricity · mapped topic

• H01L43/12

  Electricity · mapped topic

• H10N50/80 Primary

  Constructional details · CPC title

• H10N50/01

  Manufacture or treatment · CPC title