Photovoltaics on silicon

Patent metadata

Field	Value
Publication number	US-9508890-B2
Application number	US-10013108-A
Country	US
Kind code	B2
Filing date	Apr 9, 2008
Priority date	Apr 9, 2007
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

Structures including crystalline material disposed in openings defined in a non-crystalline mask layer disposed over a substrate. A photovoltaic cell may be disposed above the crystalline material.

First claim

What is claimed is:

1. A structure comprising:
a mask layer disposed above a top surface of a substrate, the mask layer comprising a non-crystalline material and having an opening defined by non-crystalline sidewalls of the mask layer, the opening exposing an area of the top surface of the substrate, the top surface of the substrate comprising a first crystalline material, the area having a width w and a length l, the non-crystalline sidewalls having a height h, wherein the width w is smaller than the length l, and twice the height h is smaller than the length l;
a second crystalline material contacting the first crystalline material in the opening, the second crystalline material being lattice mismatched to the first crystalline material, the second crystalline material having a first region disposed above and proximal to a portion of the top surface of the substrate and having a second region disposed above the first region and above the portion of the top surface of the substrate, no interface comprising a different material being between the first region and the second region in a direction perpendicular to the top surface of the substrate, a majority of defects in the first region of the second crystalline material arising from the lattice mismatch between the first crystalline material and the second crystalline material terminating at the non-crystalline sidewalls;
a photovoltaic cell disposed above the second crystalline material, the photovoltaic cell comprising more than one active cell junctions above the second crystalline material and an active cell junction below the top surface of the substrate, the active cell junction below the top surface of the substrate comprising a doped layer in a bottom surface of the substrate, all portions of the doped layer being separated from the mask layer by a portion of the substrate; and
an electrical contact disposed on the bottom surface of the substrate.

2. The structure of claim 1 wherein the substrate comprises monocrystalline silicon.

3. The structure of claim 2 wherein the monocrystalline silicon comprises (111) silicon.

4. The structure of claim 1 wherein the mask layer comprises at least one of an oxide of silicon or a nitride of silicon.

5. The structure of claim 1 wherein the mask layer comprises a first layer and a second layer, and a chemical composition of the first layer is different from a chemical composition of the second layer.

6. The structure of claim 1 wherein the second crystalline material comprises at least one of a III-V compound, a II-VI compound, or a group IV element or compound.

7. The structure of claim 6 wherein the second crystalline material comprises the III-V compound, and the III-V compound comprises a III-nitride material.

8. The structure of claim 1 wherein the opening defines a generally rectangular shape on the top surface of the substrate.

9. The structure of claim 1 wherein the width is less than or equal to about 1 micrometer.

10. The structure of claim 9 wherein the length is less than about 1 micrometer.

11. The structure of claim 9 wherein the length is greater than about 1 millimeter.

12. The structure of claim 9 wherein the height is less than about 1 micrometer.

13. The structure of claim 9 wherein the height is greater than about 1 micrometer.

14. The structure of claim 9 wherein the width is selected from a range of about 100 nanometers to about 1 micrometer.

15. The structure of claim 14 wherein the length is greater than twice the width.

16. The structure of claim 14 wherein the height is greater than the width.

17. The structure of claim 9 wherein the width is selected from a range of about 10 nanometers to about 50 nanometers.

18. The structure of claim 9 wherein the width is selected from a range of about 50 nanometers to about 100 nanometers.

19. The structure of claim 18 wherein the height is greater than the width.

20. The structure of claim 1 , wherein the first region has a height selected from a range of about ½w to 2w and the second region has a height selected from a range of about 1w to 10w.

21. A structure comprising:
a mask layer disposed above a top surface of a substrate, the mask layer comprising a non-crystalline material and having a plurality of openings extending from a top surface of the mask layer to the top surface of the substrate, the top surface of the substrate comprising a first crystalline material, wherein each opening of the plurality of openings is defined by non-crystalline sidewalls having a height h and has a width w and length l along the top surface of the substrate, and the width w is smaller than the length l, and the height is smaller than half the length l;
a second crystalline material disposed in and above the plurality of openings, the second crystalline material contacting the first crystalline material in the plurality of openings, the second crystalline material being lattice mismatched to the first crystalline material, a first portion of the second crystalline material disposed above the openings being substantially exhausted of dislocation defects arising from the lattice mismatch between the first crystalline material and the second crystalline material, a majority of dislocation defects in a second portion of the second crystalline material disposed within the openings and adjacent to the first crystalline material in the top surface of the substrate arising from the lattice mismatch between the first crystalline material and the second crystalline material terminating at the non-crystalline sidewalls, no interface comprising a different material being between the first portion of the second crystalline material and the second portion of the second crystalline material in a direction perpendicular to the top surface of the substrate, the second crystalline material from a first opening of the plurality of openings coalescing over the top surface of the mask layer with the second crystalline material from a second opening of the plurality of openings; and
a photovoltaic cell disposed above the second crystalline material, the photovoltaic cell comprising a first cell over the second crystalline material and a second cell over the first cell, the second cell having a larger band gap than the first cell.

22. The structure of claim 21 , wherein the first portion of the second crystalline material has a height selected from a range of about ½w to 2w, and the second portion of the second crystalline material has a height selected from a range of about ½w to 10w.

23. The structure of claim 21 , wherein the photovoltaic cell further comprises a third cell below the top surface of the substrate.

24. A structure comprising:
a mask layer disposed above a top surface of a substrate, the mask layer comprising a non-crystalline material and having a plurality of openings extending from a top surface of the mask layer to the top surface of the substrate, the top surface of the substrate comprising a first crystalline material, wherein each opening of the plurality of openings is defined by non-crystalline sidewalls having a height h and has a width w and length l along the top surface of the substrate, and the width w is smaller than the length l, and the height is smaller than half the length l;
a second crystalline material disposed in and above the plurality of openings, the second crystalline material being lattice mismatched to the first crystalline material, a first portion of the s

Assignees

• Li Jizhong
• Lochtefeld Anthony J
• Sheen Calvin
• Cheng Zhiyuan
• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Li Jizhong
• Lochtefeld Anthony J
• Sheen Calvin
• Cheng Zhiyuan

Classifications

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H01L31/0693

  Electricity · mapped topic

• Y02P70/521

  Cross-Sectional Technologies · mapped topic

• H01L31/1852 Primary

  Electricity · mapped topic

• Y02E10/544

  Solar cells from Group III-V materials · CPC title