Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam

Patent metadata

Field	Value
Publication number	US-9508886-B2
Application number	US-201113271212-A
Country	US
Kind code	B2
Filing date	Oct 11, 2011
Priority date	Oct 6, 2007
Publication date	Nov 29, 2016
Grant date	Nov 29, 2016

Abstract

A method for making a crystalline silicon solar cell substrate is provided. A doped dielectric layer is deposited over the backside surface of a crystalline silicon substrate, the doped dielectric layer having a polarity opposite the polarity of the crystalline silicon substrate. Portions of the backside surface of the crystalline substrate are exposed through the doped dielectric layer. An overlayer is deposited over the doped dielectric layer and the exposed portions of the backside surface of the crystalline silicon substrate. Pulsed laser ablation of the overlayer is performed with a flat top laser beam on the silicon substrate to form continuous base openings nested within the exposed portions of the backside surface of the crystalline silicon substrate, the flat top laser beam having a beam intensity profile flatter as compared to a Gaussian beam intensity profile and having a rectangular beam cross section. Doped base regions are formed in the crystalline silicon substrate through the continuous base openings.

First claim

What is claimed is:

1. A method for making a crystalline silicon solar cell substrate, comprising the steps of:
depositing a doped dielectric layer over the backside surface of a crystalline silicon substrate, said doped dielectric layer having a polarity opposite said polarity of said crystalline silicon substrate;
exposing portions of said backside surface of said crystalline substrate through said doped dielectric layer;
depositing an overlayer over said doped dielectric layer and said exposed portions of said backside surface of said crystalline silicon substrate;
performing pulsed laser ablation of said overlayer with a flat top laser beam on said silicon substrate to form continuous base openings nested within said exposed portions of said backside surface of said crystalline silicon substrate, said flat top laser beam having a beam intensity profile flatter as compared to a Gaussian beam intensity profile and having a rectangular beam cross section; and
forming doped base regions in said crystalline silicon substrate through said continuous base openings.

2. The method of claim 1 , wherein said flat top laser beam is created according to an aperturing of the beam method.

3. The method of claim 1 , wherein said flat top laser beam is created according to a beam integration method.

4. The method of claim 1 , wherein said flat top laser beam is created according to a diffractive grating method.

5. The method of claim 1 , wherein said step of exposing portions of said backside surface of said crystalline substrate through said doped dielectric layer is performed via pulsed laser ablation.

6. The method of claim 5 , wherein said pulsed laser ablation is a pulsed laser ablation with a flat top laser beam, said flat top laser beam having a beam intensity profile flatter as compared to a Gaussian beam intensity profile and a rectangular beam cross section.

7. The method of claim 1 , wherein said step of forming doped base regions in said base openings comprises at least irradiating a phosphorus-doped silicon oxide layer to form doped base regions.

8. The method of claim 1 , wherein said step of forming doped base regions in said base openings comprises at least irradiating said base region with a hybrid flat top laser beam to form doped base regions.

9. The method of claim 1 , wherein said pulsed laser ablation of said overlayer with a flat top laser beam has an infrared wavelength.

10. The method of claim 9 , wherein said pulsed laser ablation of said overlayer with a flat top laser beam has an infrared wavelength and uses a nanoseconds pulse length.

11. The method of claim 9 , wherein said pulsed laser ablation of said overlayer with a flat top laser beam has an infrared wavelength and uses a picoseconds pulse length.

12. The method of claim 1 , wherein said pulsed laser ablation of said overlayer with a flat top laser beam has a green wavelength.

13. The method of claim 12 , wherein said pulsed laser ablation of said overlayer with a flat top laser beam has a green wavelength and uses a nanoseconds pulse length.

14. The method of claim 12 , wherein said pulsed laser ablation of said overlayer with a flat top laser beam has a green wavelength and uses a picoseconds pulse length.

15. The method of claim 14 , wherein contacts nested within said base regions are continuous.

16. The method of claim 1 , wherein said pulsed laser ablation of said overlayer with a flat top laser beam has an ultraviolet wavelength.

17. The method of claim 16 , wherein said pulsed laser ablation of said overlayer with a flat top laser beam has an ultraviolet wavelength and uses a nanoseconds pulse length.

18. The method of claim 16 , wherein said pulsed laser ablation of said overlayer with a flat top laser beam has an ultraviolet wavelength and uses a picoseconds pulse length.

19. The method of claim 1 , wherein said pulsed laser ablation of said overlayer with a flat top laser beam uses a nanoseconds pulse length.

20. The method of claim 1 , wherein said pulsed laser ablation of said overlayer with a flat top laser beam uses a picoseconds pulse length.

Assignees

• Rana Virendra V
• Anbalagan Pranav
• Moslehi Mehrdad M
• Solexel Inc

Inventors

• Rana Virendra V
• Anbalagan Pranav
• Moslehi Mehrdad M

Classifications

• H01L31/1896

  Electricity · mapped topic

• H01L31/18 Primary

  Electricity · mapped topic

• H01L31/068

  Electricity · mapped topic

• H01L31/1804

  Electricity · mapped topic

• H01L31/046

  Electricity · mapped topic